DPG60C300QB HiPerFRED² VRRM = 300 V I FAV = 2x 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C300QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline compatible with TO-247 ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b DPG60C300QB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 300 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.1 mA TVJ = 25°C 1.34 V 1.63 V 1.06 V IF = forward voltage drop min. 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 140°C rectangular 1.39 V T VJ = 175 °C 30 A TVJ = 175 °C 0.70 V d = 0.5 for power loss calculation only 10.5 mΩ 0.95 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25°C 50 pF I RM max. reverse recovery current TVJ = 25 °C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved K/W 0.25 TC = 25°C 30 A; VR = 200 V -di F /dt = 200 A/µs 160 360 W A TVJ = 125°C 7 A TVJ = 25 °C 35 ns TVJ = 125°C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b DPG60C300QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) Weight 5 MD mounting torque FC mounting force with clip Product Marking Logo Part No. Assembly Line Assembly Code g 0.8 1.2 Nm 20 120 N Part number D P G 60 C 300 QB IXYS Zyyww = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) abcd Date Code Ordering Standard Part Number DPG60C300QB Similar Part DPG60C300HB DPG60C300HJ DPG60C300PC DPF60C300HB DPG80C300HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C300QB Package TO-247AD (3) ISOPLUS247 (3) TO-263AB (D2Pak) (2) TO-247AD (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 501894 Voltage class 300 300 300 300 300 T VJ = 175 °C Fast Diode V 0 max threshold voltage 0.7 V R 0 max slope resistance * 7.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b DPG60C300QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b DPG60C300QB Fast Diode 16 80 70 0.4 14 IF = 60 A 30 A 15 A 60 50 IF TVJ = 150°C Qrr 40 [A] IF = 60 A 30 A 15 A 12 IRM 10 0.3 8 30 [A] [μC] 0.2 20 6 25°C TVJ = 125°C VR = 200 V 10 0.1 0.0 0.4 0.8 1.2 1.6 2 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 TVJ = 125°C VR = 200 V 4 70 400 600 TVJ = 125°C VR = 200 V 1.2 200 600 -diF /dt [A/μs] Fig. 3 Typ. reverse recov. current IRM versus -diF /dt VFR tfr 60 500 50 400 12 10 1.0 Kf 0.8 tfr IF = 60 A 30 A 40 15 A [ns] trr 0.6 IRM 300 [ns] 30 0.4 8 TVJ = 125°C VR = 200 V IF = 30 A 200 VFR 6 [V] 4 Qrr 0.2 20 0 40 80 120 160 100 0 200 400 600 0 -diF /dt [A/μs] TVJ [°C] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 16 200 2 600 400 -diF /dt [A/μs] Fig. 6 Typ. forward recov. voltage VFR Fig. 5 Typ. reverse recov. time trr versus -diF /dt VFR & time tfr versus diF /dt 1.0 TVJ = 125°C 14 VR = 200 V 0.8 12 10 Erec 8 IF = 15 A ZthJC 30 A 60 A [K/W] 0.6 0.4 [μJ] 6 Rthi [K/W] 0.1311 0.1377 0.3468 0.2394 0.095 4 0.2 2 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 10 100 1000 ti [s] 0.0018 0.002 0.012 0.07 0.345 10000 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b