DHG 20 C 1200 PB preliminary V RRM = 1200 V I FAV = 2x 10 A t rr = 200 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DHG 20 C 1200 PB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-220 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved typ. max. Unit 1200 V VR = 1200 V 10 µA VR = 1200 V TVJ = 125 °C 0.2 mA TVJ = 25 °C 2.22 V 2.93 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A rectangular TVJ = 125 °C d = 0.5 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 2.23 V 3.14 V TC = 105°C 10 A TVJ = 150°C 1.23 V -55 90 mΩ 1.50 K/W 150 °C TC = 25 °C 85 W t = 10 ms (50 Hz), sine TVJ = 45°C 60 A TVJ = 25 °C 9 A IF = TVJ = 125°C 10.5 A 10 A; VR = 600 V -di F /dt = 250 A/µs VR = 600 V; f = 1 MHz TVJ = 25 °C 200 ns TVJ = 125°C 350 ns TVJ = 25 °C 4 pF Data according to IEC 60747and per diode unless otherwise specified 20110715a DHG 20 C 1200 PB preliminary Ratings Symbol Definition min. Conditions I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature per terminal max. Unit 35 0.50 -55 Weight mounting torque FC mounting force with clip A K/W 150 2 MD 1) typ. 1) °C g 0.4 0.6 Nm 20 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) . In case of (1) and a common cathode/anode configu ration with a non-isolated backside, the current capability can be increased by connecting the backside. Product Marking Part number Marking on product Logo DateCode Assembly Code D H G 20 C 1200 PB abcdef YYWW Z = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) XXXXXX Assembly Line Ordering Standard Ordering Number DHG 20 C 1200 PB IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DHG20C1200PB Delivery Mode Tube Quantity 50 Code No. 505280 Data according to IEC 60747and per diode unless otherwise specified 20110715a DHG 20 C 1200 PB preliminary Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 H1 Q E L 3x b2 L1 D ØP 3x b 2x e C A2 IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110715a DHG 20 C 1200 PB preliminary 20 2.4 TVJ = 125°C VR = 600 V 2.0 15 20 A 1.6 IF Qrr 10 1.2 [A] TVJ = 125°C 5 TVJ = 25°C 0 0.0 0.5 1.0 10 A [µC] 0.8 5A 0.4 1.5 VF [V] 2.0 2.5 0.0 200 3.0 Fig. 1 Typ. forward characteristics 250 300 350 400 diF /dt [A/µs] 450 500 Fig. 2 Typical reverse recovery charge Qrr versus. diF/dt (125°C) 500 24 TVJ = 125°C TVJ = 125°C 20 A VR = 600 V 20 20 A VR = 600 V 400 10 A 16 10 A IRM trr 5A 12 [A] [ns] 300 5A 200 8 100 4 0 200 250 300 350 400 diF /dt [A/µs] 450 0 200 500 Fig. 3 Typical peak reverse current IRR versus diF/dt (125°C) 250 300 350 400 diF /dt [A/µs] 450 500 Fig. 4 Typ. recovery time trr vs. di/dt (125°C) 0.6 10 TVJ = 125°C VR = 600 V 0.5 20 A Erec 0.4 ZthJC 1 [mJ] 10 A 0.3 [K/W] Ri 0.385 0.355 0.315 0.445 5A 0.2 0.1 200 250 300 350 400 diF /dt [A/µs] 450 0.1 0.001 500 © 2011 IXYS all rights reserved 0.1 1 10 tP [s] Fig. 5 Typ. recovery energy Erec vs. diF/dt (125°C) IXYS reserves the right to change limits, conditions and dimensions. 0.01 i 0.0005 0.004 0.02 0.15 Fig. 6 Typ. transient thermal impedance Data according to IEC 60747and per diode unless otherwise specified 20110715a