MIXA10WB1200TML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM =1600 V VCES = 1200 V VCES =1200 V IDAVM25= 100 A IC25 = 17 A IC25 = 17 A IFSM = 320 A VCE(sat)= 1.8 V VCE(sat)= 1.8 V Preliminary data Part name (Marking on product) MIXA10WB1200TML E72873 Pin configuration see outlines. Features: Application: Package: •High level of integration - only one power semiconductor module required for the whole drive •Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge -square RBSOA @ 3x IC - low EMI •Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) •Temperature sense included •SONIC™ diode - fast and soft reverse recovery - low operating forward voltage •AC motor drives •Pumps, Fans •Washing machines •Air-conditioning system •Inverter and power supplies •DCB based "E1-Pack" •Assembly height is 17 mm •Insulated base plate •UL registered E72873 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110916c 1-7 MIXA10WB1200TML Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 17 12 A A TC = 25°C 63 W collector emitter saturation voltage IC = 9 A; VGE = 15 V TVJ= 25°C TVJ=125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 10 A TVJ= 25°C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = ±15 V; RG = 100 W; VCEK = 1200 V TVJ=125°C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C RG = 100 W; tp = 10 µs; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 100 W typ. 1.8 2.1 5.5 TVJ=125°C 6.0 6.5 V 0.02 0.2 0.1 mA mA 500 nA 27 nC 70 40 250 100 1.1 1.1 ns ns ns ns mJ mJ 30 40 A A 2.0 K/W K/W max. Unit 0.7 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage TVJ= 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 19 13 A A VF forward voltage IF = 10 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.85 2.2 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy TVJ=125°C tbd tbd tbd tbd RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink VR = 600 V diF /dt = -250 A/µs IF = 10 A; VGE = 0 V typ. (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved min. µC A ns mJ 2.4 0.8 K/W K/W 20110916c 2-7 MIXA10WB1200TML Brake T7 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage max. Unit 1200 V continuous transient ±20 ±30 V V IC25 IC80 collector current TC = 25°C TC = 80°C 17 12 A A Ptot total power dissipation TC = 25°C 63 W VCE(sat) collector emitter saturation voltage IC = 9 A; VGE = 15 V TVJ= 25°C TVJ=125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 10 A min. TVJ= 25°C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = ±15 V; RG = 100 W; VCEK = 1200 V TVJ=125°C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C RG = 100 W; tp = 10 µs; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 100 W typ. 1.8 2.1 5.5 TVJ=125°C 6.0 6.5 V 0.01 0.1 0.1 mA mA 500 nA 27 nC 70 40 250 100 1.1 1.1 ns ns ns ns mJ mJ 30 40 A A 2.0 0.7 K/W K/W Brake Chopper D7 Ratings typ. max. Unit TVJ=150°C 1200 V TC = 25°C TC = 80°C 19 13 A A forward voltage IF = 10 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.85 2.2 V V IR reverse current VR = VRRM TVJ= 25°C TVJ=125°C 0.01 0.1 0.1 mA mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy TVJ=125°C tbd tbd tbd tbd RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink Symbol Definitions Conditions VRRM max. repetitive reverse voltage IF25 IF80 forward current VF VR = 600 V diF /dt = tbd A/µs IF = 10 A; VGE = 0 V (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved min. µC A ns mJ 2.4 0.8 K/W K/W 20110916c 3-7 MIXA10WB1200TML Input Rectifier Bridge D8 - D11 min. Ratings typ. max. Symbol Definitions Conditions VRRM max. repetitive reverse voltage TVJ= 25°C 1600 V IFAV IDAVM average forward current max. average DC output current sine 180° rect.; d = 1/3 TC = 80°C TC = 80°C 24 69 A A IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ= 25°C TVJ=125°C 270 240 A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ= 25°C TVJ=125°C 360 290 A2s A2s Ptot total power dissipation TC = 25°C VF forward voltage IF = 30 A TVJ= 25°C TVJ=125°C 1.27 1.24 IR reverse current VR = VRRM TVJ= 25°C TVJ=125°C 0.2 RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) (per diode) Unit 70 W 1.7 V V 0.02 mA mA 1.8 K/W K/W 0.6 Temperature Sensor NTC Symbol Definitions Conditions R25 B25/50 resistance Symbol Definitions Conditions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage min. TC = 25°C 4.45 Ratings typ. max. 4.7 3510 5.0 Unit kW K Module CTI comparative tracking index Md mounting torque dS dA creep distance on surface strike distance through air min. Ratings typ. max. Unit 125 150 125 °C °C °C 2500 V~ -40 -40 IISOL < 1 mA; 50/60 Hz (M4) 2.0 2.2 12.7 7.6 Weight Nm mm mm 40 g Equivalent Circuits for Simulation I R0 Ratings typ. max. Unit TVJ=150°C 0.86 12.3 V mW T1 - T6 TVJ=150°C 1.1 153 V mW free wheeling diode D1 - D6 TVJ=150°C 1.09 91 V mW V0 R0 IGBT T7 TVJ=150°C 1.1 153 V mW V0 R0 free wheeling diode D7 TVJ=150°C 1.09 91 V mW V0 Symbol Definitions Conditions V0 R0 rectifier diode D8 - D13 V0 R0 IGBT V0 R0 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved min. TC = 25°C unless otherwise stated 20110916c 4-7 MIXA10WB1200TML Circuit Diagram Outline Drawing Dimensions in mm (1 mm = 0.0394“) Part number M = Module I = IGBT X = XPT A = standard 10 = Current Rating [A] WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit 1200 = Reverse Voltage [V] T = NTC ML = E1-Pack Ordering Part Name Marking on Product Standard MIXA 10 WB 1200 TML MIXA10WB1200TML IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 10 509367 20110916c 5-7 MIXA10WB1200TML 20 20 VGE = 15 V 16 16 12 TVJ = 25°C IC [A] VGE = 15 V 17 V 19 V 8 8 [A] TVJ = 125°C 11 V TVJ = 125°C 12 IC 13 V 9V 4 0 4 0 1 VCE [V] 2 0 3 Fig. 1 Typ. output characteristics 20 16 [A] 1 2 VCE [V] 3 4 Fig. 2 Typ. output characteristics 20 IC 0 IC = 10 A VCE = 600 V 15 12 VGE [V] 8 10 5 4 TVJ = 125°C 0 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 10 RG = 100 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 2.5 30 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 3.0 20 QG [nC] VGE [V] 2.0 Eon 1.6 IC = 10 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 2.0 E Eoff 1.5 [mJ] E [mJ] 1.0 Eoff 0.8 0.4 0.5 0.0 1.2 0 4 8 12 16 20 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.0 80 120 160 200 240 RG [Ω ] Fig. 6 Typ. switching energy vs. gate resistance 20110916c 6-7 MIXA10WB1200TML 20 2.4 100000 TVJ = 125°C VR = 600 V 2.0 15 IF Qrr 10 [A] [µC] 0.8 TVJ = 125°C 5 TVJ = 25°C 0 0.0 0.5 1.0 1.2 1.5 VF [V] 2.0 2.5 1000 0.0 200 3.0 5A 100 0 250 25 300 50 75 350 400100 T [°C] diF /dt [A/µs] 125 450 150 500 Fig. reverse recovery Fig.8 8Typical Typ. thermistor resistancecharge vs. temperature Qrr versus. diF/dt (125°C) 24 500 TVJ = 125°C 20 [A] 10 A 0.4 Fig. 7 Typ. forward characteristics IRR 20 A 10000 Rnom [ W ] 1.6 TVJ = 125°C 20 A VR = 600 V 20 A 400 VR = 600 V 10 A 16 5A 12 trr [ns] 10 A 300 5A 200 8 100 4 0 200 250 300 350 400 diF /dt [A/µs] 450 500 Fig. 9 Typical peak reverse current IRR versus diF/dt (125°C) 0 200 250 300 350 400 diF /dt [A/µs] 450 500 Fig. 10 Typ. recovery time trr vs. di/dt (125°C) 0.6 TVJ = 125°C VR = 600 V 0.5 20 A Erec 0.4 [mJ] 10 A 0.3 5A 0.2 0.1 200 250 300 350 400 diF /dt [A/µs] 450 500 Fig. 11 Typ. recovery energy Erec vs. diF/dt (125°C) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110916c 7-7