Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH10N300 VCES = 3000V IC110 = 10A VCE(sat) 3.2V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 30 10 85 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 80 1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive 10 μs PC TC = 25°C 180 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features High Blocking Voltage International Standard Package Anti-Parallel Diode Low Conduction Losses Advantages Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC V TJ = 125°C 5.0 V 25 750 μA μA Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches ±100 nA = 10A, VGE = 15V, Note 1 2.8 TJ = 125°C © 2014 IXYS CORPORATION, All Rights Reserved 3.6 3.2 V V DS100587(01/14) IXBH10N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 6 IC = 10A, VCE = 10V, Note 1 TO-247 (IXBH) Outline 10 S 1044 pF 40 pF Cres 14 pF Qg 45 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 5 nC Qgc 21 nC td(on) 30 ns 385 ns 102 ns 915 ns 42 ns 700 ns 102 ns 1030 ns tr td(off) tf td(on) tr td(off) tf IC = 10A, VGE = 15V, VCE = 1000V Resistive Switching Times, TJ = 25°C IC = 10A, VGE = 15V VCE = 1250V, RG = 10 Resistive Switching Times, TJ = 125°C IC = 10A, VGE = 15V VCE = 1250V, RG = 10 RthJC 0.69 RthCS 0.21 °C/W °C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 10A, VGE = 0V 3.2 trr IRM QRM IF = 5A, VGE = 0V, -diF/dt = 100A/μs 1.6 23 18.6 VR = 100V, VGE = 0V V μs A μC Note 1: Pulse Test, t 300μs, Duty Cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBH10N300 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 20 120 VGE = 15V 12V 10V 9V 18 16 VGE = 15V 100 14V 8V 13V 80 I C - Amperes I C - Amperes 14 12 10 7V 8 6 12V 60 11V 10V 40 9V 4 6V 8V 20 2 7V 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 20 1.7 VGE = 15V 12V 10V 9V 18 16 30 VGE = 15V 1.6 1.5 VCE(sat) - Normalized 14 I C - Amperes 6V 0 0 8V 12 10 7V 8 6 6V I C = 20A 1.4 1.3 I C = 10A 1.2 1.1 I C = 5A 1.0 4 0.9 2 5V 0.8 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 5 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 36 TJ = 25ºC 5.5 32 28 5.0 I C - Amperes VCE - Volts 24 4.5 I C = 20A 4.0 3.5 10A 3.0 20 16 12 TJ = 125ºC 25ºC 8 2.5 - 40ºC 4 5A 0 2.0 6 7 8 9 10 11 12 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBH10N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 36 18 TJ = - 40ºC 16 32 28 25ºC 12 10 24 I F - Amperes g f s - Siemens 14 125ºC 8 6 20 TJ = 25ºC TJ = 125ºC 16 12 4 8 2 4 0 0 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 I C - Amperes 2 2.5 3 3.5 VF - Volts Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 16 f = 1 MHz VCE = 1kV 14 VGE - Volts 12 Capacitance - PicoFarads I C = 10A I G = 10mA 10 8 6 4 1,000 Cies 100 Coes 2 Cres 0 10 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 90 1 80 70 Z (th)JC - ºC / W I C - Amperes 60 50 40 30 20 TJ = 125ºC 10 RG = 10Ω dv / dt < 10V / ns 0 500 1000 1500 2000 2500 3000 0.1 0.01 0.00001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBH10N300 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ TC = 25ºC 100 @ TC = 75ºC 100 VCE(sat) Limit VCE(sat) Limit 10 25µs 1 100µs 1ms I D - Amperes I D - Amperes 10 1 25µs 100µs 1ms 0.1 0.1 TJ = 150ºC TJ = 150ºC 10ms TC = 25ºC Single Pulse DC TC = 75ºC Single Pulse 100ms 10ms DC 100ms 0.01 0.01 1 10 100 1,000 VDS - Volts © 2014 IXYS CORPORATION, All Rights Reserved 10,000 1 10 100 1,000 10,000 VDS - Volts IXYS REF: B_10N300(3T) 01-09-14