IXYH40N65B3D1 IXYQ40N65B3D1 V

Advance Technical Information
IXYH40N65B3D1
IXYQ40N65B3D1
XPTTM 650V IGBT
GenX3TM w/ Diode
VCES =
IC110 =
VCE(sat) 
tfi(typ) =
Extreme Light Punch Through
IGBT for 5-30kHz Switching
650V
40A
2.0V
73ns
TO-247 (IXYH)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
650
650
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC110
IF110
ICM
TC
TC
TC
TC
86
40
50
195
A
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
20
300
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
ICM = 80
@VCE  VCES
A
tsc
(SCSOA)
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
5
μs
PC
TC = 25°C
300
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in
6.0
5.5
g
g
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
TO-247
TO-3P
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
650
= 250A, VGE = 0V
VGE(th)
IC
= 250A, VCE = VGE
ICES
VCE = VCES, VGE = 0V
G
C
E
G = Gate
E = Emitter
VCE = 0V, VGE = 20V
VCE(sat)
IC
3.5
= 40A, VGE = 15V, Note 1
TJ = 150C
© 2014 IXYS CORPORATION, All Rights Reserved
Tab
C
= Collector
Tab = Collector





6.0
V
10 A
1.5 mA
100
1.7
2.0
2.0
Optimized for Low 5-30kHz Switching
Square RBSOA
Anti-Parallel Fast Diode
Avalanche Rated
Short Circuit Capability
Advantages


High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
V
TJ = 150C
IGES
Tab
E
TO-3P (IXYQ)

IC
C
Features
TJ
TJM
Tstg
TL
TSOLD
G
nA
V
V








Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100630(9/14)
IXYH40N65B3D1
IXYQ40N65B3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
16
IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 40A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 10
Note 2
Inductive load, TJ = 150°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 10
Note 2
RthJC
RthCS
TO-247 Outline
27
S
1880
210
43
pF
pF
pF
68
10
33
nC
nC
nC
20
37
0.80
140
73
0.70
ns
ns
mJ
ns
ns
mJ
1.25
20
37
1.60
176
174
1.15
ns
ns
mJ
ns
ns
mJ
0.25
0.50 °C/W
°C/W
1
2
P
3
e
Terminals: 1 - Gate
3 - Emitted
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P Outline
Reverse Diode (FRED)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF
IF = 30A, VGE = 0V, Note 1
Irr
trr
IF = 30A, VGE = 0V,
-diF/dt = 500A/μs, VR = 400V
Characteristic Values
Min. Typ.
Max.
TJ = 150°C
1.2
2.5
V
V
TJ = 150°C
TJ = 150°C
24
125
A
ns
RthJC
0.60 °C/W
1 = Gate
3 = Emitter
Notes:
2,4
= Collector
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYH40N65B3D1
IXYQ40N65B3D1
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
80
280
VGE = 15V
13V
12V
11V
70
60
VGE = 15V
240
14V
200
10V
13V
40
I C (A)
I C (A)
50
9V
160
12V
120
11V
30
8V
9V
40
10
7V
0
0
0.5
1
1.5
2
2.5
8V
7V
0
3
0
5
10
15
20
25
VCE (V)
VCE (V)
Fig. 3. Output Characteristics @ TJ = 150ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
80
2.0
VGE = 15V
13V
12V
11V
60
30
VGE = 15V
1.8
I C = 80A
VCE(sat) - Normalized
70
10V
50
I C (A)
10V
80
20
9V
40
30
8V
1.6
1.4
I C = 40A
1.2
1.0
20
7V
0.8
10
I C = 20A
6V
0.6
0
0
0.5
1
1.5
2
2.5
3
-50
3.5
-25
0
25
75
100
125
150
TJ (ºC)
VCE (V)
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
6
50
Fig. 6. Input Admittance
90
TJ = 25ºC
80
5
70
I C (A)
V CE (V)
60
4
I C = 80A
50
40
3
TJ = 150ºC
25ºC
30
40A
- 40ºC
20
2
10
20A
1
0
7
8
9
10
11
12
VGE - (V)
© 2014 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
VGE (V)
8
9
10
175
IXYH40N65B3D1
IXYQ40N65B3D1
Fig. 8. Gate Charge
Fig. 7. Transconductance
40
16
TJ = - 40ºC
VCE = 325V
14
30
25ºC
12
25
150ºC
10
VGE (V)
g f s (S)
35
20
I C = 40A
I G = 10mA
8
15
6
10
4
5
2
0
0
0
10
20
30
40
50
60
70
80
90
0
100
10
20
30
50
60
70
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
90
10,000
f = 1 MHz
80
Cies
70
60
1,000
I C (A)
Capacitance (pF)
40
QG (nC)
I C (A)
Coes
100
50
40
30
Cres
20
TJ = 150ºC
10
RG = 10Ω
dv / dt < 10V / ns
10
0
0
5
10
15
20
25
30
35
40
100
200
300
400
VCE (V)
500
600
700
VCE (V)
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
Fig. 11. Forward-Bias Safe Operating Area
1
1000
VCE(sat) Limit
100
10
I D (A)
100µs
1
1ms
0.01
DC
TC = 25ºC
Single Pulse
0.01
1
0.1
10ms
TJ = 175ºC
0.1
Z (th)JC (ºC / W)
25µs
10
100
1000
VDS (V)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
IXYH40N65B3D1
IXYQ40N65B3D1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
3.2
Eoff
2.8
Eon -
---
7
3.2
6
2.8
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Eoff
VCE = 400V
3.0
1.6
3
1.2
2
2.5
1.6
2.0
TJ = 150ºC
1.2
1.5
0.8
1.0
TJ = 25ºC
I C = 30A
0.8
0.4
10
15
20
25
30
35
40
45
50
1
0.4
0
0.0
0.5
0.0
15
55
20
25
30
35
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff
VCE = 400V
1.4
2.5
1.2
2.0
1.0
1.5
100
160
280
140
240
160
80
120
10
15
20
25
30
tfi
200
180
td(off) - - - -
260
200
240
180
tfi
120
160
100
140
TJ = 25ºC
120
60
100
40
80
35
50
55
40
45
I C (A)
© 2014 IXYS CORPORATION, All Rights Reserved
50
55
240
220
60
200
140
180
I C = 30A
120
160
I C = 60A
100
140
80
120
60
100
40
25
50
75
100
TJ (ºC)
125
80
150
t d(off) (ns)
180
t f i (ns)
TJ = 150ºC
30
td(off) - - - -
VCE = 400V
160
200
t d(off) (ns)
t f i (ns)
220
140
25
45
RG = 10Ω , VGE = 15V
VCE = 400V
20
40
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
RG = 10Ω , VGE = 15V
15
35
RG (Ω)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
80
200
I C = 60A
TJ (ºC)
160
320
I C = 30A
100
0.0
150
125
400
360
180
0.5
0.4
440
VCE = 400V
1.0
0.6
220
60
td(off) - - - -
120
I C = 30A
75
55
t d(off) (ns)
3.0
E on (mJ)
1.6
50
50
TJ = 150ºC, VGE = 15V
200
3.5
0.8
tfi
220
4.0
I C = 60A
1.8
25
45
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
240
4.5
----
RG = 10Ω , VGE = 15V
2.0
Eoff (mJ)
Eon
5.0
t f i (ns)
2.2
40
I C (A)
RG (Ω)
2.4
E on (mJ)
4
E off (mJ)
2.0
I C = 60A
Eon (mJ)
E off (mJ)
3.5
VCE = 400V
2.4
5
2.0
----
RG = 10Ω , VGE = 15V
TJ = 150ºC , VGE = 15V
2.4
Eon
4.0
IXYH40N65B3D1
IXYQ40N65B3D1
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
180
tri
160
100
100
td(on) - - - -
tri
90
TJ = 150ºC, VGE = 15V
140
50
I C = 30A
60
40
40
30
20
20
0
10
10
15
20
25
30
35
40
45
50
32
tri
140
td(on) - - - -
30
RG = 10Ω , VGE = 15V
28
VCE = 400V
100
26
80
24
60
22
40
t d(on) (ns)
I C = 60A
20
I C = 30A
18
0
50
75
20
15
10
20
25
30
35
40
I C (A)
160
25
20
15
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
20
40
0
55
RG (Ω)
120
25
t r i (ns)
80
60
60
100
125
16
150
TJ (ºC)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
45
50
55
60
t d(on) (ns)
100
30
VCE = 400V
TJ = 25ºC, 150ºC
t d(on) (ns)
t r i (ns)
td(on) - - - -
70
I C = 60A
35
RG = 10Ω , VGE = 15V
80
80
VCE = 400V
120
t r i (ns)
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
IXYH40N65B3D1
IXYQ40N65B3D1
Fig. 23. Reverse Recovery Charge vs. -diF/dt
Fig. 22. Diode Forward Characteristics
80
2.2
70
2.0
60
IF = 60A
VR = 400V
1.8
TJ = 150ºC
30A
QRR (µC)
50
I F (A)
TVJ = 150ºC
TJ = 25ºC
40
1.6
1.4
30
15A
1.2
20
1.0
10
0.8
0
0
0.5
1
1.5
2
200
2.5
300
400
500
600
700
800
900
-diF/ dt (A/µs)
VF (V)
Fig. 24. Reverse Recovery Current vs. -diF/dt
Fig. 25. Reverse Recovery Time vs. -diF/dt
220
34
TVJ = 150ºC
32
TVJ = 150ºC
200
VR = 400V
30
IF = 60A
VR = 400V
30A
28
180
15A
tRR (ns)
I RR (A)
26
24
22
160
IF = 60A
140
20
30A
120
18
15A
16
100
14
12
200
80
300
400
500
600
700
800
900
200
300
400
Fig. 26. Dynamic Parameters QRR, IRR vs.
Junction Temperature
1.2
500
600
700
800
900
-diF/dt (A/µs)
diF/dt (A/µs)
Fig. 27. Maximum Transient Thermal Impedance (Diode)
1
VR = 400V
1.0
I F = 30A
-dIF /dt = 500 A/µs
Z (th)JC (ºC / W)
KF
0.8
0.6
0.4
KF IRR
0.1
KF QRR
0.2
0.0
0
20
40
60
80
100
TJ (ºC)
© 2014 IXYS CORPORATION, All Rights Reserved
120
140
160
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
IXYS REF: IXY_40N65B3D1(51) 9-11-14