IRF4410 Series

IRF4410 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(97A, 100Volts)
DESCRIPTION
The Nell IRF4410 is a three-terminal silicon
device with current conduction capability of 97A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 100V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
UPS and general purpose switching applications .
D
D
G
G
S
D
FEATURES
S
TO-263(D2PAK)
(IRF4410H)
TO-220AB
(IRF4410A)
RDS(ON) = 9.0mΩ @ VGS = 10V
Ultra low gate charge(120nC max.)
Low reverse transfer capacitance
(C RSS = 170pF typical)
Fast switching capability
100% avalanche energy specified
D (Drain)
Improved dv/dt capability
175°C operation temperature
PRODUCT SUMMARY
ID (A)
G
(Gate)
97
VDSS (V)
100
RDS(ON) (mΩ)
9.0 @ V GS = 10V
QG(nC) max.
120
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
100
V DGR
Drain to Gate voltage
R GS =20KΩ
100
V GS
ID
Gate to Source voltage
UNIT
V
±20
T C =25°C
97
T C =100°C
69
Continuous Drain Current
A
I DM
Pulsed Drain current(Note 1)
I AR
Avalanche current(Note 1)
E AR
Repetitive avalanche energy(Note 1)
I AR =58A, R GS =50Ω, V GS =10V
105
E AS
Single pulse avalanche energy(Note 2)
I AS =58A, L=0.143mH
242
dv/dt
Peak diode recovery dv/dt(Note 3)
390
58
mJ
16
V /ns
230
W
PD
Total power dissipation
TJ
Operation junction temperature
-55 to 175
Storage temperature
-55 to 175
T STG
TL
T C =25°C
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
300
10 (1.1)
Note: 1. Repetitive rating: pulse width limited by junction temperature. .
2 . I AS = 58 A, V DD = 50V, L = 0.143mH, R GS = 25Ω, starting T J =25°C.
3 . I SD ≤ 58 A, di/dt ≤ 610 A/µs, V DD ≤ V (BR)DSS , starting T J≤175 °C.
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1.6mm from case
Page 1 of 9
ºC
lbf . in (N . m)
RoHS
RoHS
IRF4410 Series
SEMICONDUCTOR
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
Min.
Typ.
UNIT
Max.
0.65
TO-220AB
62
TO-263(D 2 PAK)
40
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
PARAMETER
TEST CONDITIONS
Drain to source breakdown voltage
I D = 250µA , V GS = 0V
Breakdown voltage temperature coefficient
I D = 5mA, V DS =V GS
Drain to source leakage current
Min.
Typ.
Max.
100
V
V/ºC
0.12
V DS =100V, V GS =0V
T C = 25°C
10
V DS =80V, V GS =0V
T C =125°C
100
μA
Gate to source forward leakage current
V GS = 20V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -20V, V DS = 0V
-100
R DS(ON)
Static drain to source on-state resistance
I D = 58A, V GS = 10V
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =150μA
RG
Internal gate resistance
g fs
Forward transconductance
I GSS
nA
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
t d(ON)
Turn-on delay time
tr
t d(OFF)
tf
QG
UNIT
Rise time
Turn-off delay time
7.2
2.0
9.0
mΩ
4.0
V
0.7
I D =58A, V DS =10V
Ω
140
S
4820
V DS = 50V, V GS = 0V, f =1MHz
pF
340
170
16
52
V DD = 65V, V GS = 10V, l D = 58A,
R GS = 2.7Ω (Note 1 , 2 )
ns
43
Fall time
57
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
83
V DD = 50V, V GS = 10V, I D = 58A
(Note 1, 2)
120
19
nC
27
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
Is (Is D )
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
V
Diode forward voltage
I SD = 58A, V GS = 0V
1.3
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
97
D (Drain)
A
I SM
Pulsed source current
390
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 58A, V R = 85V,
dI F /dt = 100A/µs
t ON
Forward turn-on time
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2% .
2. Essentially independent of operating temperature.
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Page 2 of 9
38
60
ns
53
80
nC
IRF4410 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
4410
IRF
A
MOSFET series
N-Channel, IR series
Current & Voltage rating, lD & VDS
97A / 100V
Package type
A = TO-220AB
H = TO-263 (D2PAK)
Fig.1 Typical output characteristics
10 3
V GS
Top: 15V
10V
8V
6V
5.5V
5V
4.8V
Bottorm: 4.5V
10 2
Drain-to-Source current,l D (A)
Drain-to-Source current,l D (A)
10 3
Fig.2 Typical output characteristics
4.5V
10 1
≤60µs pulse width
T J =25°C
1
0.1
10 0
1
10 2
4.5V
10 1
≤60µs pulse width
T J =175°C
1
10 2
0.1
Drain-to-Source voltage, V DS (V)
Drain-to-Source on-resistance, R DS(on)
(Normalized)
Drain-to-Source current,l D (A)
V DS =50V
≤60µs pulse width
10 2
T J =175°C
T J =25°C
1
0.1
3
4
5
6
7
Gate-to-Source voltage, V GS (V)
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10 0
10 2
Fig.4 Normalized on-resistance vs.
Junction temperature
10 3
2
1
Drain-to-Source voltage, V DS (V)
Fig.3 Typical transfer characteristics
10 1
V GS
Top: 15V
10V
8V
6V
5.5V
5V
4.8V
Bottorm: 4.5V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Junction Temperature, T J (°C)
Page 3 of 9
IRF4410 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
Fig.6 Typical gate charge vs. Gate-to-Source
voltage
12
V GS = 0V, f=1MHz
C iss = C gs +C gd ( C ds = shorted )
C rss = C gd
C oss = C ds +C gd
10 4
Gate-Source voltage,V GS (V)
Capacitance, C (pF)
10 5
C iss
C oss
10 3
C rss
10 2
10
1
V DS = 80V
10
V DS = 40V
V DS = 20V
8
6
4
2
0
100
0
Fig.7 Typical Source-Drain diode forward voltage
10 3
Drain-to-Source current, l D (A)
10 2
T J =175°C
10 1
T J =25°C
1
V GS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
60
80
100
Fig.8 Maximum safe operating area
10 3
Reverse drain current, l SD (A)
40
Total gate charge, Q G (nC)
Drain-to-Source voltage, V DS (V)
Operation in this area
limited by R DS (on)
100µsec
1msec
10 2
10msec
DC
10 1
T C = 25°C
T J = 175°C
Single Pulse
1
2.5
0
1
10
100
Source-to-Drain voltage, V SD (V)
Drain-to-Source voltage, V DS (V)
Fig.9 Maximum drain current vs. Case temperature
Fig.10 Drain-to-Source breakdown voltage
vs. Junction temperature
Drain-to-Source breakdown voltage
, V (BR)DSS (V)
100
Drain Current, l D (A)
20
80
60
40
20
50
75
100
125
150
Case temperature, T C ( ° C)
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I D = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0
0
25
125
20 40 60 80 100 120 140 160 180
Junction temperature, T J ( ° C)
Page 4 of 9
IRF4410 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.11 Typical C OSS stored energy
Fig.12 Maximum avalanche energy vs.
Drain current
1000
1.8
900
Single pulse avalanche energy
, E AS (mJ)
2.0
1.6
Energy ( µ J)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-10
800
700
I D = 6.4A
600
500
I D = 9.4A
400
300
I D = 58A
200
100
0
0
25
10 20 30 40 50 60 70 80 90 100
75
50
Drain-to-Source voltage, V DS (V)
100
125
150
175
Starting T J , Junction temperature(°C)
Fig.13 Maximum effective transient thermal lmpedance, Junction-to-Case
Thermal response, Rth(j-c) (°C/W)
1
D = 0.5
0.2
0.1
0.1
R1
0.05
τJ
0.02
0.01
τ2
τ1
0.01
R2
τC
Ri (°C/W)
τi (sec)
0.237
0.000178
0.413
0.003772
τ
Ci = i/Ri
Notes:
1. Duty factor, D = t1/ t2
2. Peak Tj = PDM * Rth(j-c) +TC
Single pulse
(Thermal response)
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
Rectangular pulse duration (sec.), t 1
Fig.14 Typical avalanche current vs. Pulse width
100
Allowed avalanche current vs avalanche
pulse width, t av, assuming ▲Tj=150°C and
Duty Cycle = Single Pulse
Tstart = 25 ° C (Single Pulse)
Avalanche current (A)
0.01
10
0.05
0.10
1
Allowed avalanche current vs avalanche
0.1
10 -6
pulse width, t av, assuming ▲T j =25 ° C and
Tstart=150 ° C
10 -5
10 -4
10 -3
t av (sec.)
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10 -2
10 -1
RoHS
RoHS
IRF4410 Series
SEMICONDUCTOR
Nell High Power Products
Fig.15 Maximum avalanche energy vs.
Junction temperature
Avalanche energy, E AR (mJ)
150
Notes on Repetitive Avalanche Curves. Fig. 14, 15:
TOP
BOTTOM
l D = 58A
Single Pulse
1.0% Duty Cycle
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T jmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T jmax is not exceeded.
100
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4.P D(ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
50
6.l av = Allowable avalanche current.
7. ▲T = Allowable rise in junction temperature, not to exceed T max (assumed
as 25°C in Fig.14, 15).
t av = Average time in avalanche.
0
25
75
50
100
125
150
175
D = Duty cycle in avalanche = t av · f
R th(j-c) (D, t av ) = Transient thermal resistance, see fig.13
Starting T J , junction temperature (°C)
P D(ave) = ½ (1.3·BV·l av ) = ▲T/R th(j-c)
l av = 2▲T/[1.3· BV·R th( j-c ) ]
E AS(AR) = P D(ave) ·t av
Fig.16 Threshold voltage vs. Junction
Temperature
Fig.17 Typical recovery current vs. di f /dt
20
I F = 39A
V R = 85V
4.0
15
3.5
l RRM (A)
Gate threshold voltage, V GS(th) (V)
4.5
3.0
2.5
T J =125°C
10
T J =25°C
I D = 150μA
I D = 250μA
I D = 1.0mA
I D = 1.0A
2.0
1.5
1.0
-75 -50 -25
5
0
0
25
50
100
75 100 125 150 175 200
200
Junction temperature, T J (°C)
400
500
600
700
di f /dt (A/μs)
Fig.18 Typical recovery current vs. di f /dt
Fig.19 Typical stored charge vs. di f /dt
20
400
I F = 58A
V R = 85V
350
15
I F = 39A
V R = 85V
300
Q rr (nC)
l RRM (A)
300
T J =125°C
10
250
T J =125°C
200
150
T J =25°C
T J =25°C
5
100
50
0
100
200
300
400
500
600
0
700
di f /dt (A/μs)
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100
200
300
400
500
di f /dt (A/μs)
Page 6 of 9
600
700
IRF4410 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.20 Typical stored charge vs. di f /dt
450
I F = 58A
V R = 85V
400
Q rr (nC)
350
300
T J =125°C
250
200
150
T J =25°C
100
50
0
100
200
300
400
500
600
700
di f /dt (A/μs)
Fig.21 Peak diode recovery dv/dt test circuit for N-Channel
D.U.T.
Driver Gate Drive
+
P.W.
-
-
-
•
•
•
•
RG
D.U.T. I SD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by R G
Driver same type as D.U.T.
l SD controlled by Duty Factor " D "
D.U.T. -Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray lnductance
• Ground Plane
• Low Leakage lnductance
Current Transformer
+
D=
Period
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
V DD +
Body Diode
VDD
Forward Drop
Inductor Curent
-
Ripple ≤ 5%
ISD
*V GS = 5V for Logic Level Devices
Fig.22a Unclamped lnductive test circuit
Fig.22b Unclamped inductive waveforms
V (BR)DSS
15V
DRIVER
L
V DS
RG
tp
D.U.T.
l AS
+
V
- DD
A
20V
tP
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0.01Ω
l AS
Page 7 of 9
*
IRF4410 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.23a Switching time test circuit
Fig.23b Switching time Waveforms
LD
V DS
V DS
90%
+
V DD
-
D.U.T.
V GS
10%
t d(ON)
V GS
t d(OFF)
tR
Second Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
Fig.24a Gate charge test circuit
tF
Fig.24b Gate charge waveform
ID
VDS
VGS
L
0
D.U.T.
+ V CC
VGS(TH)
20K
Qgodr
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Page 8 of 9
Qgd
Qgs2 Qgs1
IRF4410 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
6.22 (0.245)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
D (Drain)
2.79 (0.110)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
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Page 9 of 9