IRF640 Series

IRF640 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(18A, 200Volts)
DESCRIPTION
The Nell IRF640 are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications
such as switching regulators, convertors, motor drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
These transistors can be operated directly from
integrated circuits.
D
D
G
G
D
D
S
S
TO-220AB
(IRF640A)
FEATURES
TO-263(D2PAK)
(IRF640H)
RDS(ON) = 0.180Ω @ VGS = 10V
Ultra low gate charge(63nC max.)
Low reverse transfer capacitance
(C RSS = 91pF typical)
D (Drain)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
PRODUCT SUMMARY
ID (A)
18
VDSS (V)
200
RDS(ON) (Ω)
0.180 @ V GS = 10V
QG(nC) max.
63
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
VDSS
TEST CONDITIONS
PARAMETER
VALUE
Drain to Source voltage(Note 1)
T J =25°C to 150°C
200
V DGR
Drain to Gate voltage
R GS =20KΩ
V GS
Gate to Source voltage
200
±20
ID
Continuous Drain Current
V GS =10V, T C =25°C
18
V GS =10V, T C =100°C
I DM
Pulsed Drain current (Note 1)
11
72
I AR
Repetitive avalanche current (Note 1)
18
E AR
Repetitive avalanche energy(Note 1)
I AR =18A, R GS =50Ω, V GS =10V
Single pulse avalanche energy (Note 2)
I AS =18A, L=2.7mH
E AS
dv/dt
PD
TJ
T STG
TL
Peak diode recovery dv/dt(Note 3)
Total power dissipation
T C =25°C
Derating factor above 25 ° C
13
mJ
125
W
0.98
W /°C
-55 to 150
3 . I SD ≤ 18A, di/dt ≤ 150A/µs, V DD ≤ V (BR)DSS , T J ≤ 150°C.
www.nellsemi.com
Page 1 of 7
ºC
300
10 (1.1)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . V DD =50V,L=2.7mH,I AS =18A,R G =50Ω,starting T J =25˚C
mJ
V /ns
-55 to 150
Mounting torque, #6-32 or M3 screw
A
5
Storage temperature
1.6mm from case
V
580
Operation junction temperature
Maximum soldering temperature, for 10 seconds
UNIT
lbf . in (N . m)
RoHS
RoHS
IRF640 Series
SEMICONDUCTOR
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
Min.
Typ.
UNIT
Max.
1.0
ºC/W
0.5
60
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
I GSS
V GS = 0V, I D = 250µA
Breakdown voltage temperature coefficient
I D = 1mA, referenced to 25°C
Drain to source leakage current
Forward transconductance
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
t d(ON)
Turn-on delay time
t d(OFF)
tf
Rise time
Turn-off delay time
V/ºC
V DS =160V, V GS =0V
T C =125°C
250
V GS = - 20V, V DS = 0V
V GS = 10V, l D = 11A (Note 1)
V GS =V DS , I D =250μA
V DS =50V, I D =11A
UNIT
V
0.29
25
V GS = 20V, V DS = 0V
Static drain to source on-state resistance
Max.
T C = 25°C
Gate to source reverse leakage current
Gate threshold voltage
Typ.
V DS =200V, V GS =0V
Gate to source forward leakage current
V GS(TH)
g fS
Min.
200
Drain to source breakdown voltage
R DS(ON)
tr
TEST CONDITIONS
PARAMETER
0.15
μA
100
-100
nA
0.18
Ω
4
V
S
2
6.7
1300
V DS = 25V, V GS = 0V, f =1MHz
430
pF
130
12
V DD = 100V, I D = 18A,R D = 5.4Ω,
V GS = 10V, R G =9.1Ω (Note 1)
50
ns
45
35
Fall time
LD
Internal drain inductance
LS
Internal source inductance
QG
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
4.5
Between lead, 6mm from
package and center of die
nH
7.5
70
12
V DS = 160V, V GS = 10V, I D = 18A
nC
40
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
I s (I SD )
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
Min.
Typ.
I SD = 18A, V GS = 0V
Integral reverse P-N junction
diode in the MOSFET
Max.
UNIT
2
V
18
D (Drain)
I SM
72
Pulsed source current
A
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
t ON
Forward turn-on time
I SD = 18A, V GS = 0V,
dI F /dt = 100A/µs
610
ns
3.4
7
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% .
www.nellsemi.com
300
Page 2 of 7
RoHS
RoHS
IRF640 Series
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION SCHEME
IRF
A
640
MOSFET series
N-Channel, IR series
Current & Voltage rating, lD & VDS
18A / 200V
Package type
A = TO-220AB
H = TO-263 (D2PAK)
10 1
V GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
10 0
4.5V
10 -1
10 -1
Fig.2 Typical transfer characteristics
Drain Current, l D (Amps)
Drain Current,l D (Amps)
Fig.1 Typical output characteristics,
T C =25°C
10 0
20µs pulse width
T C =25°C
25°C
10 0
V DS =50V
20µs pulse width
10 -1
4
10 1
Drain-to-Source voltage , V DS (volts)
4.5V
10 0
20µs pulse width
T J =150°C
10 -1
10 -1
10 0
10 1
Drain-to-Source voltage , V DS (volts)
www.nellsemi.com
7
8
9
10
Fig.4 Normalized On-Resistance vs. Temperature
Drain-to-Source on resistance, R DS(on)
(Normalized)
Drain Current, l D (Amps)
10 1
6
5
Gate-to-Source voltage , V GS (volts)
Fig.3 Typical output characteristics,
T C =150°C
V GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
150°C
10 1
3
l D =18A
2.5
2
1.5
1
0.5
V GS =10V
0
-60 -40 -20
0
20
40 60 80 100 120 140 160
Junction Temperature,T J (°C)
Page 3 of 7
IRF640 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.6 Typical source-drain diode forward
voltage
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
3000
Capacitance, (pF)
Reverse drain current,I SD (A)
V GS = 0V, f =1MHZ
C iss = C gs +C gd ( C ds = shorted )
C rss = C gd
C oss = C ds +C gd
2500
2000
Ciss
1500
1000
Coss
500
Crss
150°C
25°C
10 1
10 0
V GS = 0V
0
0.5
10 1
10 0
Drain-to-Source voltage , V DS (volts)
1.1
1.5
1.3
Source-to-drain voltage, V SD (volts)
Fig.8 Maximum safe operating area
Fig.7 Typical gate charge vs. gate-to-source
voltage
10³
20
V DS = 160V
V DS = 100V
V DS = 40V
l D = 18A
16
Drain current , l D (Amps)
Gate-to-source voltage , V GS (volts)
0.9
0.7
12
8
Operation in This Area is Limited by R DS(ON)
10²
10µs
100µs
10
1ms
10ms
1
Note:
1. T C = 25°C
2. T J = 150°C
3. Single Pulse
4
For test circuit
See figure 13
0.1
0.1 ²
0
0
15
30
60
45
75
⁵
1
²
Fig.9 Maximum drain current vs.
Case temperature
Drain Current , l D (Amps)
20
16
12
9
4
50
75
100
125
Case temperature, T C ( ° C)
www.nellsemi.com
²
⁵ 10² ²
⁵ 10³
Drain-to-Source voltage, V DS (volts)
Total gate charge , Q G (nC)
0
25
⁵ 10
Page 4 of 7
150
IRF640 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
Thermal response (RthJc)
10
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
Single pulse
(Thermal response)
10 - ²
t1
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
10 - ³
10 - ₅
10 -⁴
10 - ²
10 - ³
t2
10
1
0.1
Rectangular Pulse Duration , t 1 (seconds)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
RD
V DS
V DS
90%
V GS
RG
D.U.T.
+
- V DD
10V
V GS
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
10%
t d(ON)
t d(OFF)
tR
Fig.12a. Unclamped lnductive test circuit
RG
Fig.12b. Unclamped lnductive waveforms
BV DSS
L
V DS
tF
l AS
D.U.T.
l AS
+
V
- DD
l D(t)
A
V DS(t)
V DD
10V
tP
0.01Ω
Time
tp
Vary t p to obtain required I AS
www.nellsemi.com
Page 5 of 7
RoHS
RoHS
IRF640 Series
SEMICONDUCTOR
Nell High Power Products
Fig.12c. Maximum avalanche energy vs.
Drain current
Single pulse energy, E AS (mJ)
1400
lD
8A
11A
BOTTOM 18A
1200
TOP
1000
800
600
400
200
V DG = 50 V
0
50
25
75
100
150
125
Starting Junction temperature, T J (°C)
Fig.13a. Basic gate charge waveform
Fig.13b. Gate charge test circuit
Current Regulator
Same Type as D.U.T.
V GS
50KΩ
QG
0.2µF
12V
10V
0.3µF
+
Q GD
Q GS
-
D.U.T.
V DS
V GS
3mA
RG
Charge
RD
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
D.U.T.
Driver Gate Drive
+
Circuit Layout Considerations
• Low Stray lnductance
• Ground Plane
• Low Leakage lnductance
Current Transformer
P.W.
D=
Period
P.W.
Period
VGS=10V
-
*
D.U.T. I SD Waveform
+
-
-
RG
Reverse
Recovery
Current
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
l SD controlled by Duty Factor " D "
D.U.T. -Device Under Test
Re-Applied
Voltage
+
-
V DD
Diode Recovery
dv/dt
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
*V GS = 5V for Logic Level Devices and 3V for drive devices
www.nellsemi.com
Page 6 of 7
IRF640 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
6.22 (0.245)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
D (Drain)
2.79 (0.110)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
www.nellsemi.com
Page 7 of 7