230PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Phase Control Thyristors (Stud Version), 230A FEATURES Center amplifying gate Metal case with ceramic insulator lnternational standard case TO-209AB (TO-93), Lead (Pb)-free Compression bonded encapsulation for heavy duty operation such as severe thermal cycling Designed and qualified for industrial level TYPICAL APPLICATIONS DC motor controls Controlled DC power supplies AC controllers PRODUCT SUMMARY IT(AV) 230A VDRM/VRRM 400V to 2000V VTM 1.55V IGT 120mA TJ -40°C to 125°C Package TO-209AB (TO-93) Diode variation Single SCR TO-209AB(TO-93) MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER IT(AV) Tc I T(RMS) I TSM VALUES UNIT 230 A 85 ºC 360 A 50 HZ 5700 60 HZ 5970 50 HZ 163 60 HZ 148 A I 2t V DRM /V RRM tq Typical TJ kA 2 s 400 to 2000 V 100 µs -40 to 125 ºC ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 230PTxxSC www.nellsemi.com Page 1 of 6 lDRM/lRRM, MAXIMUM AT TJ = TJ MAXIMUM mA 30 230PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION PARAMETER Maximum average current at heatsink temperature Maximum RMS on-state current SYMBOL I T(AV) I T(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 78°C case temperature t = 10ms Maximum peak, one cycle non-reptitive surge current I TSM t = 8.3ms t = 10ms t = 8.3ms I 2t t = 10ms Maximum l²√t for fusing 230 A 85 ºC 360 A No voltage reapplied 5700 100%V RRM reapplied 4790 5970 No voltage reapplied Sinusoidal half wave, initial T J = T J maximum 5010 163 148 100%V RRM reapplied 115 t = 0.1 to 10 ms, no voltage reapplied 1625 t = 8.3ms I 2√t UNIT A t = 10ms t = 8.3ms Maximum l²t for fusing VALUES 104 Low level value of threshold voltage V T(TO)1 (16.7% x π x l T(AV) < I < π x l T(AV) ),T J =T J maximum 0.92 High level value of threshold voltage V T(TO)2 (I > π x l T(AV) ),T J =T J maximum 0.98 r t1 (16.7% x π x l T(AV) < I < π x l T(AV) ),T J =T J maximum 0.88 High level value on-state slope resistance r t2 (I > π x l T(AV) ),T J =T J maximum 0.81 l pk = 720A, T J =T J maximum , t p = 10 ms sine pulse 1.55 V TM Maximum holding current lH Maximum (Typical) latching current lL T J = 25°C, anode supply 12V resistive load kA 2√s V Low level value on-state slope resistance Maximum on-state voltage kA 2 s mΩ V 200 mA 300(200) SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time SYMBOL dl/dt TEST CONDITIONS Gate drive 20V, 20Ω, t r ≤ 1µs T J =T J maximum, anode voltage ≤ 80% V DRM td Gate current 1A, dl g /dt =1 A/µs V D = 0.67 V DRM , T J = 25°C tq l TM = 300A, T J =T J maximum, dl/dt = 20A/µs. V R = 50V, dV/dt = 20 V/µs, gate 0 V 100Ω, tp = 500µs VALUES UNIT 1000 A/µs 1.0 µs Typical turn-off time 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT Maximum critical rate of rise of off-state voltage dV/dt T J =T J maximum linear to 80% rated V DRM 500 V/µs Maximum peak reverse and off-state leakage current l RRM, l DRM, T J =T J maximum, rated V DRM /V RRM applied 30 mA www.nellsemi.com Page 2 of 6 230PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TRIGGERING SYMBOL PARAMETER VALUES TEST CONDITIONS Maximum peak gate power P GM P G(AV) Maximum average gate power Maximum peak positive gate current I GM Maximum peak positive gate voltage +V GM Maximum peak negative gate voltage -V GM T J = T J maximum, t p ≤ 5 ms 10 T J = T J maximum, f = 50 Hz, d% = 50 2 T J = T J maximum, t p ≤ 5 ms 3 W V 5 140 - 70 120 30 - 1.8 - T J = 25°C 1.2 2.0 T J = 125°C 0.8 - T J = 25°C Maximum required gate current/voltage are the lowest value which will trigger all units 12V anode to cathode applied T J = 125°C T J = -40°C DC gate voltage required to trigger V GT DC gate current not to trigger l GD T J = T J maximum DC gate voltage not to trigger A 20 T J = T J maximum, t p ≤ 5 ms T J = -40°C I GT DC gate current required to trigger UNIT MAX. TYP. V GD Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to cathode applied mA V 10 mA 0.25 V VALUES UNIT THERMAL AND MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case TEST CONDITIONS TJ -40 to 125 T stg -40 to 150 R thJC ºC DC operation 0.10 K/W Maximum thermal resistance, case to heatsink R thC-hs Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31(275) 24.5(210) N.m (lbf.in) 280 g Mounting force, ±10% Lubricated threads Approximate weight Case style TO-209AB (TO-93) RthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.016 0.012 120° 90° 0.019 0.025 0.020 0.027 60° 0.036 0.037 30° 0.060 0.060 TEST CONDUCTIONS UNITS T J = T J maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC www.nellsemi.com Page 3 of 6 230PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics 125 R thJC (DC) = 0.10K/W 120 115 110 Conduction Angle 105 100 95 90 30° 60° 90° 85 120° 180° 80 75 Maximum allowable heatsink temperature(˚C) Maximum allowable heatsink temperature(˚C) 125 115 110 Conduction Period 105 100 95 90 30° 85 60° 90° 80 120° 0 50 100 150 200 250 DC 0 100 200 300 400 Average on-state current (A) Average on-state current (A) Fig.3 On-state power loss characteristics Fig.4 On-state power loss characteristics 450 180° 400 120° 90° 300 60° 30° 250 RMS Limit 200 150 Conduction Angle T J = 125°C 100 50 Maximum average on-state power loss(W) 350 0 DC 180° 350 120° 300 90° 250 60° 30° RMS Limit 200 150 Conduction Period T J = 125°C 100 50 0 0 50 100 150 200 250 300 0 Average on-state current (A) Peak half sine wave on-state current(A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge initial T J = 125°C @ 60Hz 0.0083 s @ 50Hz 0.0100 s 4500 4000 3500 3000 2500 2000 1 10 100 Number of equal amplitude half cycle current pulses (N) www.nellsemi.com 100 150 200 250 300 350 400 Fig.6 Maximum non-repetitive surge current single and double side cooled 5500 5000 50 Average on-state current (A) Fig.5 Maximum non-repetitive surge current single and double side cooled Peak half sine wave on-state current(A) 180° 75 70 400 Maximum average on-state power loss(W) R thJC (DC) = 0.10 K/W 120 6000 5500 5000 4500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial T J = 125°C, @50Hz No Voltage Reapplied Rated V RRM Reapplied 4000 3500 3000 2500 2000 0.01 0.1 Pulse train duration (S) Page 4 of 6 1 230PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.8 Thermal lmpedance Z thJC characteristics Transient thermal lmpedance Z thJC (K/W) Fig.7 On-state voltage drop characteristcs Instantaneous on-state current (A) 10000 T J = 125°C 1000 T J = 25°C 100 10 0 3.0 2.0 1.0 4.0 1 Steady state value R thJC = 0.10K/W (DC operation) 0.1 0.01 0.001 0.001 5.0 Instantaneous on-state voltage (V) 0.01 0.1 1 Square wave pulse duration (s) Fig.9 Gate characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10 ohms; tr<=1µs b) Recommended load line for <=30% rated di/dt : 10V, 10 ohms tr<=1 µs (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms (a) (b) VGD T J = -40°C T J = 25°C 1 T J = 125°C Instantaneous gate voltage (V) 100 (1) IGD 0.1 0.001 (2) (3) (4) Frequency Limited by PG(AV) 0.01 0.1 10 1 100 Instantaneous gate current (A) ORDERING INFORMATION TABLE Device code www.nellsemi.com 230 PT 16 S C 1 2 3 4 5 1 - Maximum average on-state current IT(AV), 230 for 230A 2 - PT = Phase Control Thyristors 3 - Voltage code, cold × 100 = VRRM/VRRM 4 - S = Stud product 5 - C = TO-209AB (TO-93), pressure contact type (Compression bonded) Page 5 of 6 10 230PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TO-209AB (TO-93) Ceramic Housing (lnner Pressure Contact Structure) Ø4.3(0.17) 19.0(0.75) Max. 4.0(0.16)Max. 2 2 .0 (0 .8 6 ) M in . Ø8.5(0.33)Max. C.S. 0.4mm 2 (0.0006 s.i.) Red Cathode 275.0(10.83)±5.0(0.20) 250.0(9.84)±5.0(0.20) Brown silicon rubber tube C.S. 25mm 2 (0.039 s.i.) Flexible leads Red Shrinking tube White Gate 3.5(0.14) 2.0(0.08) Ø28.3(1.11) 14.5(0.58) Max. 27.5(1.08) Max. 38.5(1.52) Max. White Shrinking tube 3/4”-16UNF-2A (M20 X 1.5 for Metric Device) SW 32 Ø30.0(1.18) K G Ø35.0(1.38) Max. All dimensions in millimeters(inches) www.nellsemi.com Page 6 of 6 A