RFP25N05 - New Jersey Semiconductor

^s.mi-dondiicto'i Lpioduati, One..
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
RFP25N05
25A, 50V, 0.047 Ohm, N-Channel Power
MOSFET
Features
• 25A,50V
The RFP25N05 N-channel power MOSFET is manufactured
using the MegaFET process. This process which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. This transistor can be operated directly
from integrated circuits.
Ordering Information
PART NUMBER
RFP25N05
PACKAGE
TO-220AB
BRAND
• rDS(ON) = 0.0470
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
Symbol
RFP25N05
NOTE: When ordering use the entire part number.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
RFP25N05
Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified
Drain to Source Voltage (Note 1 )
..........................................
VDSS
Drain to Gate Voltage
Gate to Source Voltage
Continuous Drain Current
..................................................
ID
Pulsed Drain Current (Note 3)
..............................................
IDM
Pulsed Avalanche Rating
.................................................
EAS
Maximum Power Dissipation
...............................................
Prj
Linear Derating Factor
.......................................................
Operating and Storage Temperature
....................................
Tj, TSTG
Maximum Temperature for Soldering
Leads at0.063in (1.6mm) from Case for 10s
..................................
T|_
Package Body for 10s, See Techbrief 334
..................................
Tpkg
RFP25N05
50
50
±20
25
Refer to Peak Current Curve
Refer to UIS Curve
72
0.48
UNITS
V
V
V
A
A
W
-55 to 175
w/°c
°c
300
260
°c
°c
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto150°C.
Electrical Specifications
Tc = 25°C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
SYMBOL
BVDSS
50
MAX
UNITS
-
V
-
4
V
VDS = Rated BVDSS, VGS = 0V
-
-
1
HA
VDS = ° 8 x Rated BVDSS,TC = 150°C
-
-
25
uA
VGS = ±20V
-
-
±100
nA
ID = 25A, VGS = 10V (Figure 9)
-
-
0.047
n
VDD = 25V, ID =12.5A, RL = 2.0Q,
VQS- iov, RQ - 10 Q
(Figure 13)
-
-
60
ns
-
14
-
ns
tr
-
30
-
ns
'd(OFF)
-
45
-
ns
tf
-
22
-
ns
VGS(TH)
'DSS
!GSS
rDS(ON)
Turn-On Time
'ON
Turn-On Delay Time
td(ON)
Rise Time
Fall Time
Turn-Off Time
ID = 250nA, VGS = 0V (Figure 1 1 )
VGS = V DS.
'D = 250mA (Figure 10)
-
-
100
ns
-
-
80
nC
-
-
45
nC
-
-
3
nC
VDS = 25V- VGS = ov,
-
1075
-
PF
f = 1MHz
(Figure 12)
-
350
-
PF
-
100
-
pF
-
-
2.083
°C/W
-
-
80
°c/w
MIN
TYP
MAX
UNITS
-
-
1.5
V
-
125
ns
1OFF
QG(TOT)
VGS = 0V to 20V
Gate Charge at 10V
°.G(10)
VGS = OVto 10V
Threshold Gate Charge
QG(TH)
VGS = ov to 2V
Total Gate Charge
TYP
-
Gate to Source Leakage Current
Turn-Off Delay Time
WIN
2
Zero Gate Voltage Drain Current
Drain to Source On Resistance
TEST CONDITIONS
Input Capacitance
CISS
Output Capacitance
c oss
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
Rejc
Thermal Resistance Junction to Ambient
VDD = 4ov,
ID - 25A, RL = 1.6JJ
'g(REF) = 0.75mA
(Figure 13)
(Figure 3)
RejA
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
ISD = 25A
tRR
ISD = 25A, dlSD/dt = 100A/HS
-
NOTES:
2. Pulse test: pulse width < 300|j.s, duty cycle < 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve