^s.mi-dondiicto'i Lpioduati, One.. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 RFP25N05 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A,50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This transistor can be operated directly from integrated circuits. Ordering Information PART NUMBER RFP25N05 PACKAGE TO-220AB BRAND • rDS(ON) = 0.0470 • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175°C Operating Temperature Symbol RFP25N05 NOTE: When ordering use the entire part number. Packaging JEDEC TO-220AB DRAIN (FLANGE) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors RFP25N05 Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified Drain to Source Voltage (Note 1 ) .......................................... VDSS Drain to Gate Voltage Gate to Source Voltage Continuous Drain Current .................................................. ID Pulsed Drain Current (Note 3) .............................................. IDM Pulsed Avalanche Rating ................................................. EAS Maximum Power Dissipation ............................................... Prj Linear Derating Factor ....................................................... Operating and Storage Temperature .................................... Tj, TSTG Maximum Temperature for Soldering Leads at0.063in (1.6mm) from Case for 10s .................................. T|_ Package Body for 10s, See Techbrief 334 .................................. Tpkg RFP25N05 50 50 ±20 25 Refer to Peak Current Curve Refer to UIS Curve 72 0.48 UNITS V V V A A W -55 to 175 w/°c °c 300 260 °c °c CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: = 25°Cto150°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVDSS 50 MAX UNITS - V - 4 V VDS = Rated BVDSS, VGS = 0V - - 1 HA VDS = ° 8 x Rated BVDSS,TC = 150°C - - 25 uA VGS = ±20V - - ±100 nA ID = 25A, VGS = 10V (Figure 9) - - 0.047 n VDD = 25V, ID =12.5A, RL = 2.0Q, VQS- iov, RQ - 10 Q (Figure 13) - - 60 ns - 14 - ns tr - 30 - ns 'd(OFF) - 45 - ns tf - 22 - ns VGS(TH) 'DSS !GSS rDS(ON) Turn-On Time 'ON Turn-On Delay Time td(ON) Rise Time Fall Time Turn-Off Time ID = 250nA, VGS = 0V (Figure 1 1 ) VGS = V DS. 'D = 250mA (Figure 10) - - 100 ns - - 80 nC - - 45 nC - - 3 nC VDS = 25V- VGS = ov, - 1075 - PF f = 1MHz (Figure 12) - 350 - PF - 100 - pF - - 2.083 °C/W - - 80 °c/w MIN TYP MAX UNITS - - 1.5 V - 125 ns 1OFF QG(TOT) VGS = 0V to 20V Gate Charge at 10V °.G(10) VGS = OVto 10V Threshold Gate Charge QG(TH) VGS = ov to 2V Total Gate Charge TYP - Gate to Source Leakage Current Turn-Off Delay Time WIN 2 Zero Gate Voltage Drain Current Drain to Source On Resistance TEST CONDITIONS Input Capacitance CISS Output Capacitance c oss Reverse Transfer Capacitance CRSS Thermal Resistance Junction to Case Rejc Thermal Resistance Junction to Ambient VDD = 4ov, ID - 25A, RL = 1.6JJ 'g(REF) = 0.75mA (Figure 13) (Figure 3) RejA Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL TEST CONDITIONS VSD ISD = 25A tRR ISD = 25A, dlSD/dt = 100A/HS - NOTES: 2. Pulse test: pulse width < 300|j.s, duty cycle < 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve