^Products.,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
The RF Line
NPN Silicon
RF Power Transistor
MRF448
Designed primarily for high-voltage applications as a high-power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
•
Specified 50 Volt, 30 MHz Characteristics
Output Power = 250 W
Minimum Gain = 12 dB
Efficiency = 45%
250 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
•
Intermodulation Distortion @ 250 W (PEP) —
IMD = -30dB(Max)
•
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
CASE 211-11
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Symbol
Value
Unit
VCEO
VCBO
VEBO
50
Vdc
100
Vdc
4.0
Vdc
16
Adc
20
Adc
PD
290
1.67
Watts
W/°C
Tstg
-65 to +150
°C
Symbol
Max
Unit
ROJC
0.6
°C/W
"c
—
Withstand Current — 10s
Total Device Dissipation @ TC = 25°C (1 )
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Win
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 200 mAdc, IB = 0)
V(BR)CEO
50
—
—
Vdc
Collector-Emitter Breakdown Voltage (Ic = 100 mAdc, VBE - 0)
V(BR)CES
100
—
—
Vdc
Collector-Base Breakdown Voltage (Ic = 100 mAdc, IE = 0)
V(BR)CBO
100
—
—
Vdc
Emitter-Base Breakdown Voltage (IE = 10 mAdc, Ic = 0)
V(BR)EBO
4.0
—
—
NOTE:
1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
Vdc
(continued)
ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Win
Typ
Max
Unit
hFE
10
30
—
—•
350
450
PF
ON CHARACTERISTICS
DC Current Gain
(ic = 5.0 Adc, VCE = iovdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
Cob
(VCB = 5°Vdc. ]E = o, f = 1 .0 MHZ)
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain
0/CC = 50 Vdc,pout = 25° W CW, f = 30 MHz, ICQ = 250 mA)
Collector Efficiency
(Vcc = 50 Vdc> pout = 25° W, f = 30 MHz, ICQ = 250 mA)
GPE
12
14
—
dB
T|
—
45
65
—
% (PEP)
% (CW)
-33
-30
dB
IMD
Intermodulation Distortion (2)
(VcE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz)
Electrical Ruggedness
(Vcc = 50 Vdc,pout =25° W CW, f = 30 MHz,
VSWR 3:1 at all Phase Angles)
—
V
No Degradation in Output Power
NOTE:
2. To Mil-Std-1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
LD
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.
X
C7^ x
C6
C1, C2, C5, C7 — 170-780 pF, Arco 469
C3, C8, C9 — 0.1 U.F, 100 V Erie
C4 — 500 nF @ 6.0 V
C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel
C10 — 10 nF, 100V
R1 — 10 O, 10 Watt
R2— 10 ft 1.0 Watt
CR1 — 1N4997 or equivalent
L1 — 3 Turns, #16 Wire, 0.4" I.D., 0.3" Long
L2 — 0.8 nH, Ohmite Z-235 or equivalent
L3 — 12 Turns, #16 Enameled Wire Closewound 0.25" I.D.
L4 — 4 Turns, 1/8" Copper Tubing, 0.6" I.D., 1.0" Long
L5, L6 — 2.0 jiH, Fair-Rite 2643021801 Ferrite bead each or equivalent
Figure 1. 30 MHz Test Circuit Schematic