, U na. 'IE.IIZU TELEPHONE: (973) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 2N3439 2N3440 SILICON NPN TRANSISTORS DESCRIPTION The 2N3439, 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ic IB Plot Plot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (Is = 0) Emitter-Base Voltage (Ic = 0) Collector Current Base Current Total Dissipation at T c < 25 °C Total Dissipation at T am b < 50 °C Storage Temperature Max. Operating Junction Temperature Value 2N3439 450 350 i i Unit 2N3440 300 250 V V 7 V 1 A 0.5 A 10 W 1 W -65 to 200 °C 200 °C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient °c/w °c/w 17.5 175 Max Max ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Unit for 2N3439 for 2N3440 VCB = 360 V VCB = 250 V 20 20 uA uA ICEO Collector Cut-off Current (IB = 0) for2N3439 for 2N3440 VCE = 300 V VCE = 200 V 20 50 uA uA ICEX Collector Cut-off Current (VBE = -1.5V) for 2N3439 for 2N3440 V EB = 6 V VCE = 450 V VCE = 300 V 500 500 uA MA 20 uA VcE(sat)* VeE(sat)* hFE* Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Ic = 50 mA for 2N3439 for 2N3440 350 250 IB = 4 mA 0.5 V Ic = 50 mA IB = 4 mA 1.3 V Ic = 20 mA lc = 2 mA VCE = 10 V VCE = 10 V for 2N3439 40 30 h FE Small Signal Current Gain Ic = 5 mA VCE = 10 V f = 1KHz 25 fl Transition frequency lc = 5 mA VCE = 10 V f = 5MHz 15 mm inch DIM. WIN TYP. V V Ic = 50 mA > Pulsed: Pulse duration = 300 us, duty cycle 1 .5 % MAX. MIN. TYP. MAX. 0.500 12.7 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 0.200 5.08 H 1.2 0.047 I 0.9 0.035 L Max. Collector Cut-off Current (IE = 0) Emitter Cut-off Current (lc = 0) VcEO(sus)* Collector-Emitter Sustaining Voltage G Typ. ICBO IEBO A Win. 45° (typ.) 160 MHz