, One. BC177,8,9 BC257,8,9 .BC307,8,9 BC320,1,2 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS, BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9. BC307, 8, 9 are complementary to BC237, 8, 9. BC320, 1, 2 are complementary to BC317, 8, 9. TO-18 TO-92B CBS ECB BC177,8,9 BC257,8,9 TO-92F TO-92A CASE CEB SSC BC307,8,9 BC320 f l,2 ABSOLUTE MAXIMUM RATINGS (v) -VCES (v) -VCEO BC177 BC178 BC179 50 50 45 30 30 25 25 5 5 20 5 BC257 BC258 BC259 50 30 50 30 25 45 3C307 BCJ08 3C309 50 30 50 30 25 45 25 BC320 BC321 BC322 50 45 30 TYPE * -VCBO 25 25 25 Tstal Power Dissipation ® (v) 25 20 20 45 30 20 -VEBO (v) -IC(DC) ptot * Tjt T8tg (mA) (mW) 100 100 100 300 300 300 -55 to 175°C 5 5 100 100 100 300 300 300 -55 to 150°C 5 5 5 100 100 100 300 300 300 -55 to 150°C 6 5 5 150 310 310 150 150 -55 to 150°C 310 2°C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Informat.on hirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 3IjP6TRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL PARAMETER Collector-Base Breakdown Voltage -BVCBO Collector-Emitter Breakdown Voltage -LVCEO * Smitter-Base Breakdown Voltage -BVEBO MIN TYP MAX Note 1 1 Collector Cutoff Current -ICES BC177, 178, 179 "\, 258, 259 | only 15 4 UNIT V -IC=10uA lE-0 V -IC=2mA IB-O V -lE-ljiA Ic-0 nA uA VCE-VCES VBE-O BC307, 308, 309 J Collector Cutoff Current BC320, 321, 322 only Collector-Emitter Saturation Voltage TEST CONDITIONS VCS=VCES VBE-O TA=125°C 30 15 -ICBO nA uA -VCB-20V lE-0 -VcB=20V IE=0 TA=IOOQC -VCE(sat)* 0.1 0.3 V -IC=10mA -!B=0.5mA 0.25 V -IC=100mA -lB=5mA V -I(3=10mA,lB*value at which -lc=llmA -VcE=lV V -IC-10mA -lB=0-5mA -1C -100mA -lB-5mA types Collector-Emitter Knee Voltage -VCEK 0.3 0.6 BC177, 178, 1791 onl ^ BC307, 308, 309 \r Saturation Voltage -VBE(sat)* 0.72 0.92 All types Base-Emitter Voltage All types BC320, 321, 322 only -VBB * -VBE * Current Gain-Bandwidth Product fT Collector-Base Capacitance BC177. 178, 179 Cob V 0.6 0.65 0.75' V 0.7 0.77V MHz 180 7 J.2 6 3-2 3-2 6 4 BC177, 178 2 10 BC257, 258 BC307, 308 BC320, 321 2 2 2 10 10 6 BC320, 321, 322 Noise Figure -VCE-5V -IC-lOmA -VcB=5V -IC=10mA -VcE=5V -VCB=IOV IE-O 3.6 BC257, 258, 259 3C307, 308, 309 -IC=2mA PF PF pF PF PP NF * &ilse Test t Pulse Width=0.3mS, Duty Cycle=l/0 1 : equal_to_the value of absolute maximum ratings dB dB dB dB dB f-lMHz -IC-0.2mA RG-2KA Af.200Hz -VCE=5V f-lkHz PARAMETER No/5e SYMBOL Figure MIH 1.2 BC259 > only BCJ09 BC322 1 HFE G-ROUP vi (Pulsed) 0.01mA KIN 2mA 70 100mA TYP 70 MAX 110 140 h - PARAMETER 4 dB dB TEST CONDITIONS -1C =0. 2mA RG=2K& Af-200Hz -7CE-57 f-lKHz -IC=0.2mA -703=5^ RG=2KA f=30Hz-15KHz TA=25°C HFE GROUP A MIN TYP MAX HFE GROUP B MIN TYP MAX ' 110 110 60 h - PARAMETERS © -IC=2mA 4 1.2 D.C. CURRENT GAIN (HFE) @ -V£8""57 ^ UNIT NF BC179 "I at-Ic TYP MAX 170 220 200 300 200 80 HFE GROUP C MIN Injwt Impedance hie 1.4 450 420 Voltage Feedback Ratio nre 2.5 Small Signal Current Gain hfe 75 HO 150 Output Admittance hoe 20 4-5 • 0.01 100 8.7 4 3.5 125 190 260 240 330 500 450 580 900 60 35 25 3 V BE AND vCE(sat) VS COLLECTOR CURRENT 200 800 240 TYPICAL CHARACTERISTICS AT TA=25°C (Pulse Test) D.C. CURRENT GAIN VS COLLECTOR CURRENT 520 HFE GROUP A HFE GROUP B HFE GROUP c MIN TYP MAX MIN TYP MAX MIN TYP MAX 2.7 MAX 330 140 -VCE=57 f-lkHz TA=25°C HFE GROUP 71 SYMBOL MIN TYP MAX TYP UNIT Kfl xlO-4 rv