(IziieuiJ ^£.mi-(2onductoi ^-Pioducti, Una. Ls TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1481 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)cEo=-100V(Min) T2 • High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, lc= -1.5A) • Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -6mA) W • Complement to Type 2SD2241 ! —lW' ' 1 • fff R. 1 ' «—T^- P N 1.BA3E 2. COLLECTOR 3.BMITTER 1 2 3 APPLICATIONS TO-220F package • High power switching applications. • Hammer drive, pulse motor drive applications, B - C - __ ABSOLUTE MAXIMUM RATINGS(Ta=25'C) p . _p ,..} -'...-' ui°Q0 r;_ •-.-*"« ' '• SYMBOL VCBO PARAMETER Collector-Base Voltage VALUE UNIT -100 V •^ rt i . . '* - > , 1 -100 V Emitter-Base Voltage -5 V Collector Current-Continuous -4 A Collector Current-Pulse -6 A -0.3 A VCEO Collector-Emitter Voltage VEBO Ic A H ~';j,, ' "D • N - ' -R- j - mm I CM IB Base Current-Continuous Collector Power Dissipation @Ta=25'C 2 Collector Power Dissipation @TC=25°C 25 Tj Junction Temperature 150 r Tstg Storage Temperature -55-150 •c PC W DIM MIN MAX A 14.95 15.05 B 10.00 10.10 C 4.40 4.60 D 0.75 0.80 F 3.10 3.30 H 3.70 3.90 J 0.50 0.70 K 13.4 13.6 1.30 L 1.10 N 5.00 5.20 Q 2.70 2.90 R 2.20 2.40 S 2.65 2.85 U 6.40 6.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2SB1481 Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10rnA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; IB= -6mA -1.5 V VeE(sat) Base-Emitter Saturation Voltage lc= -3A; IB= -6mA -2.0 V ICBO Collector Cutoff Current VCB=-100V; I E =0 -2.0 uA IEBO Emitter Cutoff Current VEB= -5V; I0= 0 -2.5 mA hpE-1 DC Current Gain lc=-1.5A; V CE =-2V 2000 hFE-2 DC Current Gain lc= -3A; VCE= -2V 1000 VECF C-E Diode Forward Voltage I F =1A 2.0 V CONDITIONS MIN TYP. MAX -100 UNIT V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time I C =-3A, l B i=-lB2=-6mA, VGC= -30V;R L =10fi 0.15 w s 0.80 us 0.40 us