RFM12N08, RFM12N10, RFP12N08, RFP12N10

'l.E.'iis.u tSztnL-Conduetoi ^Product*., Dnc.
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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
RFM12N08, RFM12N10, RFP12N08, RFP12N10
12A, 80Vand 100V, 0.200 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Features
• 12A, 80V and 100V
' rDS(ON) = 0-200ii
• Related Literature
Symbol
D
o
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM12N08
TO-204AA
RFM12N08
RFM12N10
TO-204AA
RFM12N10
RFP12N08
TO-220AB
RFP12N08
RFP12N10
TO-220AB
RFP12N10
NOTE:
When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
DRAIN
(FLANGE)
DRAIN
(TAB)
GATE (PIN 1)
SOURCE (PIN 2)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Absolute Maximum Ratings
Tc = 25°C, Unless Otherwise Specified
RFM12N08
RFM12N10
RFP12N08
RFP12N10
Drain to Source Voltage (Note 1)
VDSS
80
100
80
100
V
Drain to Gate Voltage (RGs = 20kQ) (Note 1)
VDGR
80
100
80
100
V
Irj
IDM
12
30
12
30
12
30
12
30
A
A
VQS
±20
±20
±20
±20
V
Pp
75
0.6
75
0.6
60
0.48
60
0.48
W
W/°C
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
300
260
300
260
300
260
300
260
°C
°C
Continuous Drain Current
Pulsed Drain Current (Note 3)
Gate to Source Voltage
Maximum Power Dissipation
Linear Derating Factor
Operating and Storage Temperature
Tj TSJQ
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334
TL
Tpkg
UNITS
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Tj = 25°Cto 125°C.
Electrical Specifications
Tc = 25°C, Unless Otherwise Specified
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
RFM12N08, RFP12N08
80
-
-
V
RFM12N10, EFP12N10
100
-
-
V
2
-
4
V
HA
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
BVDSS
VGS(TH)
Fall Time
Input Capacitance
VGS = VDS. ID = 250(iA (Figure 8)
VDS = Rated BVDSs, VGs = OV
-
-
VDS = 0.8 x Rated BVDSSi Tc = 125°C
-
-
25
^A
VGS = ±2ov, VDS = ov
-
-
±100
nA
ID = 12A, VGS = 10V (Figures 6, 7)
-
-
0.200
n
ID = 12A,VGS = 10V
-
-
2.4
V
VDD = sov, iD = 6A, RG = son,
vGs = iov, RL = sn,
-
45
70
ns
-
250
375
ns
'd(OFF)
-
85
130
ns
tf
-
100
150
ns
-
-
850
PF
-
-
300
PF
-
-
150
PF
°C/W
°C/W
!DSS
'GSS
rDS(ON)
VDS(ON)
td(ON)
CISS
Output Capacitance
CQSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
ID = 250nA, VGS = ov
1
tr
Turn-Off Delay Time
TEST CONDITIONS
Rejc
(Figures 10, 11, 12)
VDS = 25V, VGS = OV, f = 1 MHz
(Figure 9)
RFM12N08, RFM12N10
-
-
1.67
RFP12N08, RFP12N10
-
-
2.083
Source to Drain Diode Specifications
PARAMETER
Source to Drain Voltage (Note 2)
Reverse Recovery Time
SYMBOL
VSD
trr
MIN
TYP
MAX
UNITS
ISD = 6A
-
-
1.4
V
ISD = 4A, dlSD/dt = 100A/J1S
-
150
-
ns
TEST CONDITIONS