2N6796 - New Jersey Semiconductor

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SPRINQRELO, NEW JERSEY 07081
U.SA
2N6796
8A, 100V, 0.180 Ohm, N-Channel Power
MOSFET
Features
• 8A, 100V
The 2N6796 is an N-Channel enhancement mode silicon
gate power field effect transistor designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate drive
power.This type can be operated directly from integrated
circuits.
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Ordering Information
PART NUMBER
2N6796
PACKAGE
TO-205AF
BRAND
2N6796
Symbol
G o
Packaging
JEDEC TO-205AF
DRAIN(CASE)
SOURCE
GATE
NI Semi-Conductor? reserves the right to change lest conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the lime of going to press. However NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in iis use. NI Semi-Conductors entourages
customers to vvrih, that datasheets are current before placing orders.
2N6796
Absolute Maximum Ratings
Tc = 25°C. Unless Otherwise Specified
2N6796
UNITS
100
V
Drain to Source Breakdown Voltage (Note 1)
100
Drain to Gate Voltage (RGS = 20kO) (Note 1)
VDGR
V
8
Continuous Drain Current (Note 1)
ID
A
5
TC=100°C
ID
A
32
A
Pulsed Drain Current (Note 1)
IDM
±20
Gate to Source Voltage (Note 1)
VGS
V
8
Continuous Source Current (Body Diode)
Is
A
32
A
Pulse Source Current (Body Diode)
ISM
25
Maximum Power Dissipation (Figure 1)
PD
W
0.20
Linear Derating Factor (Figure 1)
VW°C
-55 to 150
Operating and Storage Temperature
Tj T$TG
°C
Maximum Temperature for Soldering
300
°C
Leads at 0.063in (1.6mm) from Case for 10s
T|_
Package Body for 10s, See Techbrief 334
Tpkg
260
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Tj = 25°Cto125°C.
Electrical Specifications
Tc = 25°C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
-
-
250
HA
VDS = 8ov, VGS = ov. TC = 125°C
-
-
1000
|iA
ID = 8A, VGS = 10V
-
1.56
V
VGS = ±2ov
-
±100
nA
ID = 5A, VGS = 1 ov
-
0.180
ft
ID = 5A. V GS =10V,T C = 1250C
-
0.350
ii
VSD
Tc = 25°C, ls = 8A, VGS = OV
0.75
-
1.5
V
9fs
VDS = sv. ID = 5A
3
5.5
9
s
VDD = 30V, ID = 5A, RG = son
(Figure 1 7) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
.
-
30
ns
-
75
ns
-
40
ns
ns
'd(ON)
tr
Turn-Off Delay Time
td(OFF)
Fall Time
CISS
0.14
.
tf
Input Capacitance
V
V
VGS = VDS. b = °-5mA
VDS=100V, VGS = OV
tass
Rise Time
4
-
rDS(ON)
Diode Forward Voltage (Note 2)
MAX
2
VDS(ON)
Forward Transconductance (Note 2)
UNITS
TYP
100
bss
j Gate to Source Leakage Current
MIN
ID = 0.25mA, VGS = 0V
VGS(TH)
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
TEST CONDITIONS
SYMBOL
VDS = 25V, VQS = OV, f = 1 MHz, (Figure 11)
-
-
45
350
600
900
PF
Output Capacitance
COSS
150
300
500
PF
Reverse Transfer Capacitance
CRSS
50
100
150
pF
Thermal Resistance Junction to Case
ROJC
-
175
Thermal Resistance Junction to Ambient
R9JA
Safe Operating Area
SOA
'
5
Free Air Operation
VDS = 80V, ID = 310mA
25
-
-
VDS = 3.1 2V, ID = 8A
25
-
-
MIN
TYP
MAX
-
300
°C/W
°c/w
w i
W
Source to Drain Diode Specifications
|
PARAMETER
i Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
TEST CONDITIONS
tir
Tj = 150°C. ISD = 8A. dlSD/dt = 100A/HS
QRR
Tj= 150°C, ISD = 8A, d!SD/dt= 100A/HS
j
:
1.5
UNITS
ns
'
-
fiC