i., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Ordering Information PART NUMBER PACKAGE BRAND RFH25P08 TO-218AC RFH25P08 RFH25P10 TO-218AC RFH25P10 RFK25P08 TO-204AE RFK25P08 RFK25P10 TO-204AE RFK25P10 Symbol NOTE: When ordering, use the entire part number. o s Packaging JEDEC TO-204AE JEDECTO-218AC DRAIN SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified Drain to Source Voltage (Note 1 ) ................................... Drain to Gate Voltage (RGS = 20ki2) (Note 1 ) Continuous Drain Current ........................ ........................................... Pulsed Drain Current (Note 3) .......................................... Maximum Power Dissipation ........................................ Linear Derating Factor RFH25P10 RFK25P10 UNITS Vps -80 -100 V VDGR -80 -100 V -25 -25 A A Ip .................................... Gate to Source Voltage RFH25P08 RFK25P08 IQM -60 -60 VGs ±20 ±20 V PQ 150 1.2 150 W 1.2 W/°C -55 to 150 -55 to 150 °C 300 260 300 260 °C °C ............................................. Operating and Storage Temperature ............................. Tj, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s .......................... Package Body for 10s, See Techbrief 334 (forTO-218AC) .............. TL Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: = 25 0 Cto125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER SYMBOL MIN TYP MAX UNITS RFH25P08, RFK25P08 -80 - - V RFH25P10, RFK25P10 -100 - - V -2 - -4 V VDS = Rated BVDSs. VGS = 0 - - -1 HA VDS = °-8 x Rated BVDSS. VGS = °> - - -25 MA VGS = ±2ov, VDS = ov - - ±100 nA ID = 25A, VGS = -10V, (Figures 6, 7) - - 0.150 n lD = -25A,V es = -10V - - -3.75 V ID - 12.5A, VDS = -50V, RGS = SOD, - 35 50 ns (Figures 10, 11, 12) - 165 250 ns 'd(OFF) - 270 400 ns tf . - 165 250 ns - - 3000 PF - - 1500 pF - - 600 PF - - 0.83 °C/W MIN TYP MAX UNITS I SD =-12.5A - - -1.4 V ISD = -4A, dlso/dt = 100A/HS - 300 - ns Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250nA, VGS = 0V VGS = VDS. ID = 250p,A, (Fi9ure 8) TC = 125°C Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time 'GSS rDS(ON) VDS(ON) ld(ON) Rise Time V Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance coss Reverse-Transfer Capacitance CRSS Thermal Resistance Junction to Case R8JC VGS = OV, VDS = -25V, f = 1 MHz (Figure 9) RFK25P08, RFK25P10 Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS NOTES: 2. Pulse test: pulse width < 300^5, duty cycle < 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature.