RFH25P08, RFH25P10, RFK25P08, RFK25P10

i., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
RFH25P08, RFH25P10,
RFK25P08, RFK25P10
-25A, -100V and -80V, 0.150 Ohm,
P-Channel Power MOSFETs
Features
Description
• -25A,-100V and-80V
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFH25P08
TO-218AC
RFH25P08
RFH25P10
TO-218AC
RFH25P10
RFK25P08
TO-204AE
RFK25P08
RFK25P10
TO-204AE
RFK25P10
Symbol
NOTE: When ordering, use the entire part number.
o
s
Packaging
JEDEC TO-204AE
JEDECTO-218AC
DRAIN
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified
Drain to Source Voltage (Note 1 )
...................................
Drain to Gate Voltage (RGS = 20ki2) (Note 1 )
Continuous Drain Current
........................
...........................................
Pulsed Drain Current (Note 3)
..........................................
Maximum Power Dissipation
........................................
Linear Derating Factor
RFH25P10
RFK25P10
UNITS
Vps
-80
-100
V
VDGR
-80
-100
V
-25
-25
A
A
Ip
....................................
Gate to Source Voltage
RFH25P08
RFK25P08
IQM
-60
-60
VGs
±20
±20
V
PQ
150
1.2
150
W
1.2
W/°C
-55 to 150
-55 to 150
°C
300
260
300
260
°C
°C
.............................................
Operating and Storage Temperature
.............................
Tj, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
..........................
Package Body for 10s, See Techbrief 334 (forTO-218AC)
..............
TL
Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25 0 Cto125°C.
Electrical Specifications
Tc = 25°C, Unless Otherwise Specified
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
RFH25P08, RFK25P08
-80
-
-
V
RFH25P10, RFK25P10
-100
-
-
V
-2
-
-4
V
VDS = Rated BVDSs. VGS = 0
-
-
-1
HA
VDS = °-8 x Rated BVDSS. VGS = °>
-
-
-25
MA
VGS = ±2ov, VDS = ov
-
-
±100
nA
ID = 25A, VGS = -10V, (Figures 6, 7)
-
-
0.150
n
lD = -25A,V es = -10V
-
-
-3.75
V
ID - 12.5A, VDS = -50V, RGS = SOD,
-
35
50
ns
(Figures 10, 11, 12)
-
165
250
ns
'd(OFF)
-
270
400
ns
tf .
-
165
250
ns
-
-
3000
PF
-
-
1500
pF
-
-
600
PF
-
-
0.83
°C/W
MIN
TYP
MAX
UNITS
I SD =-12.5A
-
-
-1.4
V
ISD = -4A, dlso/dt = 100A/HS
-
300
-
ns
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
BVDSS
VGS(TH)
IDSS
TEST CONDITIONS
ID = 250nA, VGS = 0V
VGS
= VDS. ID = 250p,A, (Fi9ure 8)
TC = 125°C
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
'GSS
rDS(ON)
VDS(ON)
ld(ON)
Rise Time
V
Turn-Off Delay Time
Fall Time
Input Capacitance
CISS
Output Capacitance
coss
Reverse-Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
R8JC
VGS = OV, VDS = -25V, f = 1 MHz
(Figure 9)
RFK25P08, RFK25P10
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
VSD
trr
TEST CONDITIONS
NOTES:
2. Pulse test: pulse width < 300^5, duty cycle < 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.