tf nti. TELEPHONE (973) 376-2922 (212)227-8005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA Monolithic Dual N-Channel JFET General Purpose Amplifier 2N3921/2N3922 FEATURES • Low Drain Current • High Output Impedance • Matched Va8,AVQS and gt. PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA - 25°C unless otherwise noted) Gate-Source or Gate-Drain Voltage (Note 1) -60V Gate CurrentfNote 1) 50mA Storage Temperature Range -65°Cto +20Q°C Operating Temperature Range -55°C to +200°C Load Temperature (Soldering, 10sec) +300*0 Total Power Dissipation 300mW Derate above 25°C 1.7mW/°C NOTE: Stresses above those listed under -Absolute Maximum Ratings" may caute permanent damage to the device. These are stress rating! only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications ii not implied. Exposure to absolute maximum rating conoltions for extended periods may affect device reliability. ORDERING INFORMATION 6037 Part Package 2N3921 2N3922 X2N3922 Hermetic TO-71 Hermetic TO-71 Sorted Chip Carriers Temperature Range -55°Cto+200°C -55"Cto+2000C -55°Cto+200°C ELECTRICAL CHARACTERISTICS (TA - 2S°C unless otherwise specified) SYMBOL PARAMETER loss Gate Reverse Current BVnoo Drain-Gate Breakdown Voltage VGS(O» Gate-Source Cutoff Voltage VQS Gate-Source Voltage IG MIN MAX UNITS -1 nA -1 MA 50 TA « 100°C to-luA, ls-0 -3 -0.2 TEST CONDITIONS Vos--30V, Vos-0 V -250 PA -25 nA 1 10 mA 1500 7500 Gale Operating Current loss Saturation Drain Current (Note 1) git go. c.. Common-Source Forward Transconductance (Note 2) Common-Source Output Conductance 35 Common-Source Input Capacitance (Note 3) 18 Cn, Common-Source Reverse Transfer Capacitance (Note 3) 6 »• Common-Source Forward Transconductance g«. Common-Source Output Conductance 20 NF Spot Noise Figure (Note 3) 2 VDS-10V, to-1nA VDS-10V. b-IOOuA -2.7 VoQ-IOV.b-TOOnA TA - 100°C Vos - 10V, VGS - 0 us f=1kHz Vos=10V. Vos-0 f-IMHz PF 1500 us VDO-IOV, lo-700uA f-lkHz dB VosilOV, VQ8 = 0 f-tkHz, Ro* 1megQ NJ Seiiii-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information turrmhcil hy NJ Stmi-Conductors is believed to he holh accurate and reliable at the time of going to press. However NJ Seini-C.'oniluctuis assumes no r^ponsihilily far any errors or omissions discovered in its use. NJ Semi-CiJiiductors encourages customers to vcnK rh;it datasheets are current hetore placing orders. 2N3921 /2N3922 MATCHING CHARACTERISTICS (TA - 25°C unless otherwise specified) 2N3921 SYMBOL 2N3922 PARAMETER UNITS MIN MAX MIN |VOS1-VGS2| Differential Gate-Source Voltage S 5 mV A|Vasi-V<3S2| Gate-Source Differential Voltage Change with Temperature 10 25 |iV/»C AT giii/griz Transconductanca Ratio NOTES: 1. Per transistor. 2. Pulse test duration - 2 ms. 3. For design reference only, not 100% tested. 0.95 1.0 0.95 TEST CONDITIONS MAX 1.0 VDQ-IOV. to - 700|lA TA = 0"C TB . 100°C f.ikHz