2N3921 - New Jersey Semiconductor

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TELEPHONE (973) 376-2922
(212)227-8005
FAX: (973) 378-8960
20 STERN AVE.
SPRINGFIELD. NEW JERSEY 07081
U.SA
Monolithic Dual N-Channel JFET
General Purpose Amplifier
2N3921/2N3922
FEATURES
• Low Drain Current
• High Output Impedance
• Matched Va8,AVQS and gt.
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(TA - 25°C unless otherwise noted)
Gate-Source or Gate-Drain Voltage (Note 1)
-60V
Gate CurrentfNote 1)
50mA
Storage Temperature Range
-65°Cto +20Q°C
Operating Temperature Range
-55°C to +200°C
Load Temperature (Soldering, 10sec)
+300*0
Total Power Dissipation
300mW
Derate above 25°C
1.7mW/°C
NOTE: Stresses above those listed under -Absolute Maximum
Ratings" may caute permanent damage to the device. These are
stress rating! only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications ii not implied. Exposure to absolute maximum
rating conoltions for extended periods may affect device reliability.
ORDERING INFORMATION
6037
Part
Package
2N3921
2N3922
X2N3922
Hermetic TO-71
Hermetic TO-71
Sorted Chip Carriers
Temperature Range
-55°Cto+200°C
-55"Cto+2000C
-55°Cto+200°C
ELECTRICAL CHARACTERISTICS (TA - 2S°C unless otherwise specified)
SYMBOL
PARAMETER
loss
Gate Reverse Current
BVnoo
Drain-Gate Breakdown Voltage
VGS(O»
Gate-Source Cutoff Voltage
VQS
Gate-Source Voltage
IG
MIN
MAX
UNITS
-1
nA
-1
MA
50
TA « 100°C
to-luA, ls-0
-3
-0.2
TEST CONDITIONS
Vos--30V, Vos-0
V
-250
PA
-25
nA
1
10
mA
1500
7500
Gale Operating Current
loss
Saturation Drain Current (Note 1)
git
go.
c..
Common-Source Forward Transconductance (Note 2)
Common-Source Output Conductance
35
Common-Source Input Capacitance (Note 3)
18
Cn,
Common-Source Reverse Transfer Capacitance (Note 3)
6
»•
Common-Source Forward Transconductance
g«.
Common-Source Output Conductance
20
NF
Spot Noise Figure (Note 3)
2
VDS-10V, to-1nA
VDS-10V. b-IOOuA
-2.7
VoQ-IOV.b-TOOnA
TA - 100°C
Vos - 10V, VGS - 0
us
f=1kHz
Vos=10V. Vos-0
f-IMHz
PF
1500
us
VDO-IOV,
lo-700uA
f-lkHz
dB
VosilOV, VQ8 = 0
f-tkHz,
Ro* 1megQ
NJ Seiiii-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information turrmhcil hy NJ Stmi-Conductors is believed to he holh accurate and reliable at the time of going to press. However NJ
Seini-C.'oniluctuis assumes no r^ponsihilily far any errors or omissions discovered in its use. NJ Semi-CiJiiductors encourages
customers to vcnK rh;it datasheets are current hetore placing orders.
2N3921 /2N3922
MATCHING CHARACTERISTICS (TA - 25°C unless otherwise specified)
2N3921
SYMBOL
2N3922
PARAMETER
UNITS
MIN
MAX
MIN
|VOS1-VGS2|
Differential Gate-Source Voltage
S
5
mV
A|Vasi-V<3S2|
Gate-Source Differential Voltage
Change with Temperature
10
25
|iV/»C
AT
giii/griz
Transconductanca Ratio
NOTES: 1. Per transistor.
2. Pulse test duration - 2 ms.
3. For design reference only, not 100% tested.
0.95
1.0
0.95
TEST CONDITIONS
MAX
1.0
VDQ-IOV.
to - 700|lA
TA = 0"C
TB . 100°C
f.ikHz