OM6009SA OM6011SA OM6109SA OM6111SA OM6010SA OM6012SA OM6110SA OM6112SA POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 22 Amp, N-Channel MOSFET In Hermetic Metal Package, With Optional Zener Gate Clamp Protection FEATURES • • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels Bi-Lateral Zener Gate Protection (Optional) Ceramic Feedthroughs Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zeners in the OM6109SA series. MAXIMUM RATINGS PART NUMBER OM6009SA, OM6109SA OM6010SA, OM6110SA OM6011SA, OM6111SA OM6012SA, OM6112SA VDS 100V 200V 400V 500V RDS(ON) .095 .18 .55 .85 ID(MAX) 22A 18A 10A 8A Note: OM61XX Series include gate protection circuitry. SCHEMATIC 4 11 R3 Supersedes 1 07 R2 POWER RATING 3.1 - 79 3.1 TC = 25° unless otherwise noted STATIC P/N OM6009SA / OM6109SA ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted STATIC P/N OM6010SA / OM6110SA Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 100 BVDSS Drain-Source Breakdown 200 V Voltage VGS = 0, ID = 250 mA Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 IGSSR Gate-Body Leakage Reverse -100 IGSS Gate-Body Leakage (OM6109) ± 500 IDSS Zero Gate Voltage Drain 0.1 0.25 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage VGS(th) 2.0 ID = 250 mA VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage 2.0 4.0 nA VGS = 20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V nA VGS = - 20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V nA VGS = ± 12.8 V IGSS Gate-Body Leakage (OM6110) ± 500 nA VGS = ± 12.8 V mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C ID(on) On-State Drain Current1 22 VDS(on) Static Drain-Source On-State OM6009SA - OM6112SA 3.1 ELECTRICAL CHARACTERISTICS: 1.275 1.425 TC = 125° C On-State Drain Current1 A VDS 2 VDS(on), VGS = 10 V ID(on) V VGS = 10 V, ID = 15 A VDS(on) Static Drain-Source On-State VGS = 10 V, ID = 15 A RDS(on) Static Drain-Source On-State Voltage1 18 1.4 1.8 A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 10 A Voltage1 RDS(on) Static Drain-Source On-State .085 .095 Resistance1 VGS = 10 V, ID = 10 A RDS(on) Static Drain-Source On-State .130 .155 VGS = 10 V, ID = 15 A, Resistance1 RDS(on) Static Drain-Source On-State 0.28 0.36 VGS = 10 V, ID = 10 A, Resistance1 TC = 125 C DYNAMIC TC = 125 C DYNAMIC gfs Forward Transductance1 gfs Ciss Input Capacitance 1275 pF Forward Transductance1 VGS = 0 Ciss Input Capacitance 1000 Coss Output Capacitance 550 pF pF VDS = 25 V Coss Output Capacitance 250 pF Crss Reverse Transfer Capacitance VDS = 25 V 160 pF f = 1 MHz Crss Reverse Transfer Capacitance 100 pF f = 1 MHz Td(on) tr Turn-On Delay Time 16 ns VDD = 30 V, ID = 5 A Td(on) Turn-On Delay Time 17 ns VDD = 75 V, ID @ 18 A Rise Time 19 ns Rg = 5 W , VGS = 10 V tr Rise Time 52 ns Rg = 5 W , VGS = 10 V Td(off) Turn-Off Delay Time 42 ns Td(off) Turn-Off Delay Time 36 ns tf Fall Time 24 ns (MOSFET) switching times are essentially independent of operating temperature. tf Fall Time 30 ns (MOSFET) switching times are essentially independent of operating temperature. (W ) 10.0 S(W ) VDS 2 VDS(on), ID = 15 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 27 A (Body Diode) ISM Diode Forward Voltage1 trr Reverse Recovery Time D IS G VGS = 0 A - 2.5 V TC = 25 C, IS = -24 A, VGS = 0 VSD Diode Forward Voltage1 ns TJ = 150 C,IF = IS, trr Reverse Recovery Time Junction rectifier. ISM dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. D A the integral P-N -2 V TC = 25 C, IS = -18 A, VGS = 0 Junction rectifier. 350 G - 72 (Body Diode) S Modified MOSPOWER symbol showing Source Current1 the integral P-N 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 18 (Body Diode) A 200 S(W ) VDS 2 VDS(on), ID = 10 A Continuous Source Current - 108 (Body Diode) VSD 6.0 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER symbol showing Source Current1 (W ) 3.1 - 80 0.14 0.18 Resistance1 ns TJ = 150 C,IF = IS, dlF/ds = 100 A/ms S ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: STATIC P/N OM6011SA / OM6111SA TC = 25° unless otherwise noted STATIC P/N OM6012SA / OM6112SA Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 400 BVDSS Drain-Source Breakdown 500 V Voltage VGS = 0, ID = 250 mA VGS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 IGSSR Gate-Body Leakage Reverse -100 IGSS Gate-Body Leakage (OM6111) ± 500 IDSS Zero Gate Voltage Drain 0.1 0.25 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage ID = 250 mA VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage 2.0 4.0 nA VGS = 20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V nA VGS = - 20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V nA VGS = ± 12.8 V IGSS Gate-Body Leakage (OM6112) ± 500 nA VGS = ± 12.8 V mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C ID(on) On-State Drain Current1 10 VDS(on) Static Drain-Source On-State 2.35 2.75 TC = 125° C On-State Drain Current1 A VDS 2 VDS(on), VGS = 10 V ID(on) V VGS = 10 V, ID = 5 A VDS(on) Static Drain-Source On-State Voltage1 8.0 A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 4 A RDS(on) Static Drain-Source On-State 0.47 0.55 VGS = 10 V, ID = 5 A RDS(on) Static Drain-Source On-State Resistance1 3.4 0.8 0.85 VGS = 10 V, ID = 4 A 1.50 1.65 VGS = 10 V, ID = 4 A, Resistance1 RDS(on) Static Drain-Source On-State 0.93 1.10 VGS = 10 V, ID = 5 A, Resistance1 RDS(on) Static Drain-Source On-State Resistance1 TC = 125 C DYNAMIC TC = 125 C DYNAMIC gfs Forward Transductance1 gfs Ciss Input Capacitance 1150 pF Forward Transductance1 VGS = 0 Ciss Input Capacitance 1275 Coss Output Capacitance 165 pF pF VDS = 25 V Coss Output Capacitance 200 pF Crss Reverse Transfer Capacitance VDS = 25 V 70 pF f = 1 MHz Crss Reverse Transfer Capacitance 85 pF f = 1 MHz Td(on) tr Turn-On Delay Time 17 ns VDD = 175 V, ID @ 5 A Td(on) Turn-On Delay Time 17 ns VDD = 200 V, ID = 4 A Rise Time 12 ns Rg = 5 W , VGS = 10 V tr Rise Time 5 ns Rg = 5 W , VGS = 10 V Td(off) Turn-Off Delay Time 45 ns Td(off) Turn-Off Delay Time 42 ns tf Fall Time 30 ns (MOSFET) switching times are essentially independent of operating temperature. tf Fall Time 14 ns (MOSFET) switching times are essentially independent of operating temperature. (W ) 4.0 S(W ) VDS 2 VDS(on), ID = 5 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 10 A ISM Diode Forward Voltage1 trr Reverse Recovery Time D IS Continuous Source Current G ISM the integral P-N -2 V TC = 25 C, IS = -10 A, VGS = 0 VSD Diode Forward Voltage1 ns TJ = 150 C,IF = IS, trr Reverse Recovery Time Junction rectifier. A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D G - 32 A the integral P-N -2 V TC = 25 C, IS = -18 A, VGS = 0 (Body Diode) S dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. VGS = 0 symbol showing Source Current1 A 530 -8 (Body Diode) - 40 (Body Diode) VSD S(W ) VDS 2 VDS(on), ID = 4 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER symbol showing Source Current1 4.0 Junction rectifier. 700 ns TJ = 150 C,IF = IS, dlF/ds = 100 A/ms S 3.1 OM6009SA - OM6112SA (Body Diode) (W ) 3.1 - 81 3.2 Voltage1 OM6009SA - OM6112SA ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OM6009 OM6109 OM6010 OM6110 OM6011 OM6111 OM6012 OM6112 Units 100 200 400 500 V VDS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS = 1 M ) 100 200 400 500 V ID @ TC = 25°C Continuous Drain Current 2 ± 22 ± 18 ± 10 ±8 A ID @ TC = 100°C Continuous Drain Current 2 ± 17 ± 11 ±6 ±5 A IDM Pulsed Drain Current1 ± 88 ± 72 ± 40 ± 32 A VGS Gate-Source Volt. (Unclamped Gate) ± 20 ± 20 ± 20 ± 20 V PD @ TC = 25°C Maximum Power Dissipation 125 125 125 125 W PD @ TC = 100°C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor 1.0 1.0 1.0 1.0 W/°C Junction To Ambient Linear Derating Factor .020 .020 .020 .020 W/°C TJ Operating and Tstg Storage Temperature Range -55 to 150 Lead Temperature (1/16" from case for 10 secs.) 300 300 -55 to 150 -55 to 150 -55 to 150 300 300 °C °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package Pin Limitation = 25 Amps THERMAL RESISTANCE RthJC Junction-to-Case 1.0 °C/W RthJA Junction-to-Ambient 50 °C/W Free Air Operation MECHANICAL OUTLINE .545 .535 .144 DIA. .050 .040 .940 .260 MAX .740 .540 3.1 .200 .100 2 PLCS. .040 .290 .125 2 PLCS. .125 DIA. 2 PLS. .540 1 1 2 3 Pin 1: Drain Pin 2: Source Pin 3: Gate .500 MIN. .150 .040 DIA. 3 PLCS. .150 .300 .800 .790 .685 .665 .250 2 .550 .530 3 .550 .510 .005 .045 .035 .150 TYP. .260 .249 .150 TYP. PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP NOTE: Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246