, One.. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 IRFZ44 Advanced Power MOSFET FEATURES » » » » Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge BVDSS : 60V f^DS(on) = 0.02412 ID = 50 A » Extended Safe Operating Area « 175°C Operating Temperature » Lower Leakage Current: 10uA(Max.) @ VDS = 60V TO-220 » Lower RDS(ON): 0.020Q (Typ.) LGate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Drain-to-Source Voltage Value Units 60 V Continuous Drain Current (TC=25°C) 50 Continuous Drain Current (TC=100°C) 35.4 'DM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR (1) A 200 A ±20 V (2) 857 mJ Avalanche Current (1) 50 A EAR Repetitive Avalanche Energy (1) 12.6 mJ dv/dt Peak Diode Recovery dv/dt (3) 5.5 V/ns PD Tj , TSTG TL Thermal Total Power Dissipation (TC=25°C) 126 W Linear Derating Factor 0.84 W/°C Operating Junction and -55 to +175 Storage Temperature Range °C Maximum Lead Temp, for Soldering Purposes, 1/8. from case for 5-seconds 300 Resistance Symbol Characteristic Typ. Max. RBJC Junction-to-Case - 1.19 ROCS Case-to-Sink 0.5 - RBJA Junction-to-Ambient - 62.5 Units °C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors N-CHANNEL POWER MOSFET IRFZ44 Electrical Characteristics (TC=25°C unless otherwise specified) Min. Typ. Max. Units Symbol Characteristic BVDSS Drain-Source Breakdown Voltage 60 — _ V Breakdown Voltage Temp. Coeff. — 0.063 — v/°c — 4.0 V Gate-Source Leakage , Forward 2.0 „ __ 100 Gate-Source Leakage , Reverse — — -100 V GS =-20V — — 10 VDS=60V - - 100 - - 0.024 - ABV/ATj ^GS(th) 'GSS 'DSS Gate Threshold Voltage Drain-to-Source Leakage Current Static Drain-Source RoS(on) On-State Resistance 9f» Forward Transconductance - 32.6 Ciss Input Capacitance - 1770 2300 C0ss Output Capacitance - 590 680 Crss Reverse Transfer Capacitance - 220 255 'd(on) Turn-On Delay Time -- 20 40 Rise Time - 16 40 Turn-Off Delay Time - 68 140 Fall Time - 70 140 Q9 Total Gate Charge - 64 83 Qgs Gate-Source Charge -- 12.3 - Qgd Gate-Drain (. Miller. ) Charge - 23.6 - tr td(off) tf nA uA n u Test Condition V GS =OV,l L) =250uA !D=250uA See Fig 7 VDS=5V,lD=250nA VOS=20V VDS=48V,TC=150°C VGS=10V,ID=25A (4) Vns=30V,ln=25A (4) GS -UV,V DS -ZOV,T -IMnZ PF DD-OUV,ID-OUA, ns G-9.1ii See Fig 13 (4) (5) VDS=48V,VGS=10V, nC ID=50A See Fig 6& Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Min. Typ. Max. Units Characteristic Is Continuous Source Current - - 50 ISM Pulsed-Source Current (1) — - 200 VSD Diode Forward Voltage (4) trr Qrr A Test Condition Integral reverse pn-diode in the MOSFET — - 1.8 V TJ=25°C,ls=50A,Vr,s=OV Reverse Recovery Time — 85 - ns Tj=25°C,lF=50A Reverse Recovery Charge - 0.24 - uC diF/dt=100A/|is Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=0.4mH, IAS=50A, VDD=25V, RG=27ii, Starting Tj=25°C (3) I S D <50A, di/dt<350A/us, V DD < BV DSS , Starting Tj=25°C (4) Pulse Test : Pulse Width = 250ns, Duty Cycle < 2% (5) Essentially Independent of Operating Temperature (4)