HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching REJ03G1137-0400 (Previous: ADE-208-706B) Rev.4.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 4 1 1 2 2 1. Gate 2. Drain 3. Source 4. Drain 3 2, 4 D 3 1 G Gate resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S 3 Rev.4.00 Sep 07, 2005 page 1 of 8 HAF2007(L), HAF2007(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS Value 60 Unit V VGSS VGSS 16 –2.5 V V ID Note 1 ID (pulse) 5 10 A A IDR Note 2 Pch 5 20 A W Tch Tstg 150 –55 to +150 °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Rev.4.00 Sep 07, 2005 page 2 of 8 Symbol VIH Min 3.5 Typ — Max — Unit V Test Conditions VIL IIH1 — — — — 1.2 100 V µA Vi = 8 V, VDS = 0 IIH2 IIL — — — — 50 1 µA µA Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 IIH (sd) 1 IIH (sd) 2 — — 0.8 0.35 — — mA mA Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Tsd VOP — 3.5 175 — — 12 °C V Channel temperature HAF2007(L), HAF2007(S) Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 Min 4 Typ — Max — Unit A Test Conditions VGS = 3.5 V, VDS = 2 V ID2 — — 10 — mA V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 Drain to source breakdown voltage V (BR) DSS — 60 Gate to source breakdown voltage V (BR) GSS V (BR) GSS 16 –2.5 — — — — V V IG = 300 µA, VDS = 0 IG = –100 µA, VDS = 0 IGSS1 IGSS2 — — — — 100 50 µA µA VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 IGSS3 IGSS4 — — — — 1 –100 µA µA VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 Input current (shut down) IGS (op) 1 IGS (op) 2 — — 0.8 0.35 — — mA mA VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS (off) — 1.0 — — 10 2.25 µA V VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V |yfs| 7.5 73 — 120 S mΩ ID = 2.5 A, VDS = 10 V Note 3 ID = 2.5 A, VGS = 4 V ID = 2.5 A, VGS = 10 V VDS = 10 V, VGS = 0 f = 1 MHz ID = 2.5 A VGS = 5 V RL = 12 Ω Gate to source leak current Note 3 Forward transfer admittance Static drain to source on state resistance RDS (on) 4 — Output capacitance RDS (on) Coss — — 55 270 75 — mΩ pF Turn-on delay time td (on) — 2.8 — µs Rise time Turn-off delay time tr td (off) — — 12.4 15 — — µs µs Fall time Body-drain diode forward voltage tf VDF — — 11 0.9 — — µs V trr — 140 — ns tos1 — 1.1 — ms IF = 5 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 16 V tos2 — 0.57 — ms VGS = 5 V, VDD = 24 V Body-drain diode reverse recovery time Over load shut down operation time Note4 Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. Rev.4.00 Sep 07, 2005 page 3 of 8 IF = 5 A, VGS = 0 Note 3 HAF2007(L), HAF2007(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 30 20 10 ID (A) 200 100 Drain Current Channel Dissipation Pch (W) 40 20 0 0 50 100 150 Case Temperature 200 Thermal shut down Operation area 50 10 10 5 1 4V 15 Drain Current 5 ID (A) 20 Typical Transfer Characteristics Pulse Test 8V 6V 5V 10 50 100 Drain to Source Voltage VDS (V) Tc (°C) 4 Tc = –25°C 25°C 3 Drain Current ID (A) 10 V µs PW m s DC = 10 2 Operation in (T O c = pe m this area is s 2 ra 1 limited by RDS (on) 5°C tion ) 0.5 Ta = 25°C 0.3 0.3 0.5 1 2 5 10 20 Typical Output Characteristics 25 0 VGS = 3.5 V 5 75°C 2 1 VDS = 10 V Pulse Test 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.20 0.15 ID = 2 A 0.10 1A 0.05 0.5 A 0 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.4.00 Sep 07, 2005 page 4 of 8 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.25 1 500 200 VGS = 4 V 100 50 10 V 20 Pulse Test 10 0.1 0.2 0.5 1 2 Drain Current 5 ID (A) 10 20 Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 0.5 A, 1 A ID = 2 A 0.12 VGS = 4 V 0.08 ID = 2 A 0.5 A, 1 A 0.04 10 V 0 –40 0 40 80 Case Temperature 120 160 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) HAF2007(L), HAF2007(S) 100 VDS = 10 V Pulse Test 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 0.5 Tc (°C) 500 50 Switching Time t (ns) Reverse Recovery Time trr (ns) 100 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 1 2 5 10 Reverse Drain Current 20 10 20 50 VGS = 5 V, VDD = 30 V PW = 300 µs, duty ≤ 1 % td(off) 20 tr 10 tf 5 td(on) 2 1 0.5 50 IDR (A) 1 2 5 10 Drain Current 20 50 ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 5 10000 Pulse Test 4 3 Capacitance C (pF) Reverse Drain Current IDR (A) 5 Switching Characteristics 1000 10 0.5 2 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 20 1 VGS = 5 V 0V 2 1 3000 1000 300 Coss 100 30 0 VGS = 0 f = 1 MHz 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Rev.4.00 Sep 07, 2005 page 5 of 8 0 10 20 30 40 50 Drain to Source Voltage VDS (V) HAF2007(L), HAF2007(S) Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 12 10 VDD = 16 V 8 6 24 V 4 2 0 10 µ 100 µ 1m 10 m 100 m 200 180 160 140 120 ID = 0.5 A 100 0 2 4 6 8 Gate to Source Voltage Shutdown Time of Load-Short Test PW (S) 10 VGS (V) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c θch – c = 6.25°C/W, Tc = 25°C 0.1 0.1 0.05 ul se PW T PW T tp 2 0.0 1 0.0 ho 0.03 D= PDM 1s Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 5V 50 Ω VDD = 30 V 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 6 of 8 10% tr 90% td(off) tf HAF2007(L), HAF2007(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 ± 0.5 JEITA Package Code 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 ± 0.5 5.4 ± 0.5 (0.1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.4.00 Sep 07, 2005 page 7 of 8 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 HAF2007(L), HAF2007(S) Ordering Information Part Name Quantity Shipping Container HAF2007-90L HAF2007-90S Max: 100 pcs/sack Max: 100 pcs/sack Sack Sack HAF2007-90STL HAF2007-90STR 3000 pcs/Reel 3000 pcs/Reel Embossed tape Embossed tape Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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