H5N5006DL, H5N5006DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0397-0100 Rev.1.00 May 30, 2006 Features • • • • • Low on-resistance: RDS(on) = 2.5 Ω typ. Low leakage current: IDSS = 1 µA max. (at VDS = 500 V) High speed switching: tf = 15 ns typ. (at VGS = 10 V, VDD ≅ 250 V, ID = 1.5 A) Low gate charge: Qg = 14 nC typ. (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 2 3 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.1.00, May 30, 2006, page 1 of 7 Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch Note2 θch-c Tch Tstg Ratings 500 ±30 3 Unit V V A 12 3 12 3 30 4.17 150 –55 to +150 A A A A W °C/W °C °C H5N5006DL, H5N5006DS Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Typ — — — — 2.5 2.5 Max — 1 ±0.1 4.5 — 3.0 Unit V µA µA V S Ω 365 35 8 20 12 48 15 14 2 8 0.85 270 — — — — — — — — — — 1.3 — pF pF pF ns ns ns ns nC nC nC V ns 0.8 — µC Body-drain diode reverse recovery time trr — — — — — — — — — — — — Body-drain diode reverse recovery charge Qrr — Notes: 4. Pulse test Rev.1.00, May 30, 2006, page 2 of 7 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 500 — — 3.0 1.5 — Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.5 A, VDS = 10 VNote4 ID = 1.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz VDD ≅ 250 V, ID = 1.5 A VGS = 10 V RL = 167 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 3 A IF = 3 A, VGS = 0 Note4 IF = 3 A, VGS = 0 diF/dt = 100 A/µs H5N5006DL, H5N5006DS Main Characteristics Maximum Safe Operation Area 30 20 10 5 Drain Current 20 10 50 100 200 150 Case Temperature m D = 10 s C (T O ms ( c pe 1s h = 25 rati ot) °C on ) 2 1 0.5 0.2 0.1 0.05 Tc (°C) VDS (V) Typical Transfer Characteristics 5 Pulse Test VDS = 10 V Pulse Test 10 V 8V 4 4 ID (A) ID (A) 10 30 100 300 1000 3 Drain to Source Voltage 5 6V 3 3 Drain Current Drain Current µs Operation in this area is limited by RDS(on) Typical Output Characteristics 5.5 V 2 1 5V 2 Tc = 75°C 25°C 1 –25°C VGS = 4.5 V 0 0 4 8 12 Drain to Source Voltage 0 20 16 Pulse Test 16 12 ID = 3 A 8 1A 4 8 12 Gate to Source Voltage Rev.1.00, May 30, 2006, page 3 of 7 16 8 10 VGS (V) 10 Pulse Test 5 2 VGS = 10 V, 15 V 1 0.2 0 0 6 0.5 2A 4 4 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) 20 2 0 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 1 PW 0.02 0.01 Ta = 25°C 0.005 0.1 0.3 1 0 0 10 µs ID (A) 50 0 Channel Dissipation 40 10 Pch (W) Power vs. Temperature Derating 20 VGS (V) 0.1 0.1 0.2 0.5 1 Drain Current 2 ID (A) 5 10 H5N5006DL, H5N5006DS Forward Transfer Admittance vs. Drain Current 10 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature Pulse Test VGS = 10 V 8 ID = 3 A 6 4 2A 1A 2 0 –40 0 40 80 120 Case Temperature 160 10 5 Tc = –25°C 2 25°C 1 75°C 0.5 0.2 0.1 0.1 VDS = 10 V Pulse Test Capacitance C (pF) Reverse Recovery Time trr (ns) 500 500 200 100 50 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 0.2 0.5 1 2 Reverse Drain Current 10 ID (A) 5 100 50 10 10 600 12 VDS 8 4 VDD = 400 V 250 V 100 V 8 16 24 Gate Charge Rev.1.00, May 30, 2006, page 4 of 7 0 32 Qg (nC) 40 VGS (V) 16 400 200 150 200 250 VDS (V) Switching Characteristics 1000 Switching Time t (ns) VDD = 100 V 250 V 400 V 100 Drain to Source Voltage Gate to Source Voltage VGS Crss 5 2 VGS = 0 f = 1 MHz 1 0 50 20 800 Coss 20 IDR (A) ID = 3 A Ciss 200 Dynamic Input Characteristics VDS (V) 5 1000 10 0.1 Drain to Source Voltage 2 Typical Capacitance vs. Drain to Source Voltage 1000 0 0 1 Drain Current Tc (°C) Body-Drain Diode Reverse Recovery Time 1000 0.5 0.2 VGS = 10 V, VDD = 250 V PW = 5 µs, duty ≤ 1 % RG = 10 Ω 300 tf 100 30 td(off) td(on) 10 tr 3 1 0.1 0.2 0.5 1 2 Drain Current 5 ID (A) 10 20 H5N5006DL, H5N5006DS Reverse Drain Current IDR (A) 5 Pulse Test 4 3 2 VGS = 0 V 5 V, 10 V 1 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage 2.0 5 ID = 10 mA 1 mA 4 0.1 mA 3 2 1 VDS = 10 V 0 –50 VSD (V) 0 50 100 150 Case Temperature 200 Tc (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 Tc = 25°C D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c 0.1 0.1 θch – c = 4.17°C/W, Tc = 25°C 0.05 0.02 0.03 PDM D= 0.01 ulse ot p h s 1 0.01 10 µ PW T PW T 100 µ 1m 10 m Pulse Width 100 m 1 PW (S) Switching Time Test Circuit Vin Monitor 10 Waveform 90% Vout Monitor D.U.T. Vin 10% RL Vout 10 Ω Vin 10 V VDD = 250 V 10% 90% td(on) Rev.1.00, May 30, 2006, page 5 of 7 10% tr 90% td(off) tf H5N5006DL, H5N5006DS Package Dimensions • H5N5006DL JEITA Package Code RENESAS Code PRSS0004ZD-B Previous Code MASS[Typ.] DPAK(L)-(2) / DPAK(L)-(2)V 0.42g 1.7 ± 0.5 Package Name DPAK(L)-(2) 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 Unit: mm 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 • H5N5006DS JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V 6.5 ± 0.5 5.4 ± 0.5 (0.1) MASS[Typ.] 0.28g 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.1.00, May 30, 2006, page 6 of 7 Unit: mm (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Package Name DPAK(S) 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 H5N5006DL, H5N5006DS Ordering Information Part Name H5N5006DL-E H5N5006DSTL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, May 30, 2006, page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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