RENESAS 2SJ479

2SJ479(L), 2SJ479(S)
Silicon P Channel MOS FET
REJ03G0866-0300
Rev.3.00
Jun 05, 2006
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 25 mΩ typ.
• 4 V gate drive devices.
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
D
4
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
2
3
3
S
Rev.3.00 Jun 05, 2006 page 1 of 7
2SJ479(L), 2SJ479(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Value
–30
±20
–30
–120
–30
50
150
–55 to +150
ID (pulse) Note 1
IDR
Pch Note 2
Tch
Tstg
Unit
V
V
A
A
A
W
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note:
3. Pulse test
Rev.3.00 Jun 05, 2006 page 2 of 7
Symbol
V (BR) DSS
V (BR) GSS
Min
–30
±20
Typ
—
—
Max
—
—
Unit
V
V
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IDSS
IGSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
—
—
–1.0
—
—
12
—
—
—
—
—
—
—
—
—
—
—
—
25
40
20
1700
950
260
20
290
170
130
–1.1
70
–10
±10
–2.0
35
60
—
—
—
—
—
—
—
—
—
—
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
VDS = –30 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = –1 mA, VDS = –10 V
ID = –15 A, VGS = –10 V Note 3
ID = –15 A, VGS = –4 V Note 3
ID = –15 A, VDS = –10 V Note 3
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –10 V
ID = –15 A
RL = 0.67 Ω
IF = –30 A, VGS = 0
IF = –30 A, VGS = 0
diF/dt = 50 A/µs
2SJ479(L), 2SJ479(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–500
–300
ID (A)
10 µs
–100
PW
50
25
–10
Operation in
this area is
limited by RDS (on)
–3
–1
0
0
50
100
Case Temperature
Ta = 25°C
–0.5
–0.1 –0.3
–1
200
150
Tc (°C)
–3
–10
Drain to Source Voltage
Typical Output Characteristics
–50
=
Drain Current
–30
DC
Channel Dissipation
75
)
)
µs
ot
°C
0
sh
s
25
1
10
m
s(
c=
1
m
(T
n
10
tio
ra
pe
O
Pch (W)
100
–30
–100
VDS (V)
Typical Transfer Characteristics
–10 V –6 V
–50
Tc = –25°C
–5 V
–4.5 V
–4 V
–40
ID (A)
ID (A)
Pulse Test
–3.5 V
25°C
75°C
–30
–3 V
–20
VGS = –2.5 V
–10
Drain Current
–30
Drain Current
–40
–20
–10
VDS = –10 V
Pulse Test
0
0
–2
–4
–6
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
ID = –20 A
–0.4
–10 A
–0.2
–5 A
0
0
–4
–8
–12
Gate to Source Voltage
Rev.3.00 Jun 05, 2006 page 3 of 7
–16
–20
VGS (V)
0
–1
–2
–3
–4
Gate to Source Voltage
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Voltage
0
–10
–8
0.5
Pulse Test
0.2
0.1
VGS = –4 V
0.05
0.02
0.01
–1
–10 V
–2
–5
–10
Drain Current
–20
ID (A)
–50
2SJ479(L), 2SJ479(S)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
ID = –20 A
0.06
VGS = –4 V
–5 A, –10 A
0.04
–5 A, –10 A, –20 A
0.02
–10 V
0
–40
0
40
80
Case Temperature
120
160
50
20
Tc = –25°C
10
25°C
5
75°C
2
1
0.5
VDS = –10 V
Pulse Test
0.2
0.1
–0.1 –0.2 –0.5 –1 –2
Tc (°C)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
1000
10000
500
5000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
5
–0.1 –0.2 –0.5 –1 –2
500
Crss
100
IDR (A)
–8
–12
VDD = –25 V
–10 V
–5 V
–16
–40
–50
0
16
32
Gate Charge
Rev.3.00 Jun 05, 2006 page 4 of 7
48
64
Qg (nc)
–20
80
VGS (V)
–4
VGS
VDS
–30
ID = –30 A
–4
–8
–12
–16
–20
1000
500
Switching Time t (ns)
–20
0
Switching Characteristics
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
–10
VGS = 0
f = 1 MHz
Drain to Source Voltage VDS (V)
0
VDD = –5 V
–10 V
–25 V
Coss
1000
Dynamic Input Characteristics
0
Ciss
2000
200
–5 –10 –20 –50
Reverse Drain Current
–5 –10 –20 –50
td(off)
200
100
50
tf
tr
td(on)
20
10
VGS = –10 V, VDD = –10 V
duty ≤ 1 %
5
–0.1 –0.2 –0.5 –1 –2
Drain Current
–5 –10 –20
ID (A)
–50
2SJ479(L), 2SJ479(S)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
–50
Pulse Test
–40
–10 V
–30
–5 V
–20
VGS = 0, 5 V
–10
0
0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage
VSD
–2.0
(V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.03
0.05
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
0.02
PDM
1
0.0
uls
D=
e
PW
T
PW
T
tp
o
sh
1
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –10 V
Vout
td(on)
Rev.3.00 Jun 05, 2006 page 5 of 7
10%
tr
10%
td(off)
tf
2SJ479(L), 2SJ479(S)
Package Dimensions
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
Package Name
LDPAK(S)-(1)
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
1.30g
(1.5)
10.0
Rev.3.00 Jun 05, 2006 page 6 of 7
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
JEITA Package Code

(1.4)
Package Name
LDPAK(L)
2.2
2SJ479(L), 2SJ479(S)
Ordering Information
Part Name
2SJ479L-E
2SJ479STL-E
Quantity
500 pcs
1000 pcs
Shipping Container
Box (Sack)
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Jun 05, 2006 page 7 of 7
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Colophon .6.0