2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) D 4 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2 3 S 2SK2084(L), 2SK2084(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 20 ±20 7 28 7 20 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 20 ±20 Typ — — Max — — Unit V V Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF — — 1.0 — — 5 — — — — — — — — — — — — 0.04 0.058 9 800 680 165 15 60 100 80 0.9 80 ±10 100 2.5 0.053 0.075 — — — — — — — — — — µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 7 trr Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 16 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V*3 ID = 4 A, VGS = 4 V*3 ID = 4 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 5 Ω IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 20 A / µs 2SK2084(L), 2SK2084(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 30 Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 1 m = s 10 ms DC (1 (T O sh c = pe ot) Operation in ra 2 5° tio this area is n C limited by RDS(on) ) 3 1 Ta = 25°C 50 100 150 0.1 0.3 200 30 Typical Transfer Characteristics 20 Pulse Test Drain Current ID (A) 10 V 6V 4V 3.5 V 8 3V 4 VGS = 2.5 V 2 4 6 8 16 VDS = 10 V Pulse Test 12 8 Tc = 75°C 25°C –25°C 4 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.4 0.3 ID = 5 A 0.2 2A 0.1 1A 0 10 Typical Output Characteristics 12 0 3 Drain to Source Voltage VDS (V) 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) (Ω) 16 1 Case Temperature TC (°C) 20 Drain Current ID (A) 100 µs PW 10 0.3 0 Drain to Source Saturation Voltage VDS (on) (V) 10 µs 0.2 Pulse Test 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 0.1 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2084(L), 2SK2084(S) 0.20 Pulse Test 0.16 0.12 5A 1A 2A VGS = 4 V 0.08 1A 2A 5A 0.04 10 V 0 –40 0 40 80 120 160 5 Tc = –25°C 25°C 75°C 2 1 0.5 0.1 0.2 0.5 1 2 5 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10 10000 Capacitance C (pF) 100 50 di / dt = 20 A / µs VGS = 0, Ta = 25°C 20 0.5 1 2 5 100 Crss VGS = 0 f = 1 MHz 10 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 40 VGS VDD = 20 V 10 V 5V 16 12 30 VDS 8 10 0 Coss Reverse Drain Current IDR (A) 50 20 Ciss 1000 10 0.2 4 VDD = 20 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 7 0 40 200 td(off) Switching Time t (ns) 10 0.1 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) VDS = 10 V Pulse Test 10 Case Temperature TC (°C) 200 Drain to Source Voltage VDS (V) 20 100 tf 50 20 10 0.1 VGS = 10 V VDD = 20 V PW = 5 µs duty < 1 % 0.2 0.5 tr td(on) 1 2 Drain Current ID (A) 5 10 2SK2084(L), 2SK2084(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 10 V 5V 12 VGS = 0, –5 V 8 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 θch – c(t) = γs (t) • θch – c θch – c = 6.25°C/W, Tc = 25°C 0.02 1 0.03 0.0 t ho lse PDM Pu D= 1s PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vout Vin 10 V 50 Ω 10% 10% VDD = 20 V 90% td(on) Rev.2.00 Sep 07, 2005 page 5 of 7 10% tr 90% td(off) tf 2SK2084(L), 2SK2084(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 ± 0.5 JEITA Package Code 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 ± 0.5 5.4 ± 0.5 (0.1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.2.00 Sep 07, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2SK2084(L), 2SK2084(S) Ordering Information Part Name 2SK2084L-E 2SK2084STL-E Quantity 3000 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0