SEMICONDUCTOR KF12N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ・VDSS=600V, ID=12A ・Drain-Source ON Resistance : RDS(ON)=0.6Ω(Max) @VGS=10V ・Qg(typ.)= 36nC MAXIMUM RATING (Tc=25℃) RATING CHARACTERISTIC SYMBOL UNIT KF12N60P KF12N60F Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ ID IDP 7.4 7.4* 33 33* A KF12N60F 450 mJ EAR 17 mJ dv/dt 4.5 V/ns Derate above 25℃ Storage Temperature Range 12* EAS PD Maximum Junction Temperature 12 215 49.8 W 1.72 0.4 W/℃ Tj 150 ℃ Tstg -55～150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.58 2.51 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 62.5 ℃/W * : Drain current limited by maximum junction temperature. EQUIVALENT CIRCUIT 2010. 8. 12 Revision No : 3 1/7 KF12N60P/F ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 600 - - V ID=250μA, Referenced to 25℃ - 0.63 - V/℃ Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=6A - 0.51 0.6 Ω - 36 - - 8.5 - - 13.5 - - 30 - - 40 - - 115 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=480V, ID=12A VGS=10V (Note4,5) VDD=300V ID=12A RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 55 - Input Capacitance Ciss - 1700 - Output Capacitance Coss - 185 - Reverse Transfer Capacitance Crss - 20 - - - 12 - - 48 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=12A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=12A, VGS=0V, - 370 - ns Reverse Recovery Charge Qrr dIs/dt=100A/μs - 4.6 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =5.7mH, IS=12A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤12A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 2010. 8. 12 Revision No : 3 2/7 KF12N60P/F 2010. 8. 12 Revision No : 3 3/7 KF12N60P/F 2010. 8. 12 Revision No : 3 4/7 KF12N60P/F 2010. 8. 12 Revision No : 3 5/7 KF12N60P/F 2010. 8. 12 Revision No : 3 6/7 KF12N60P/F 2010. 8. 12 Revision No : 3 7/7