ROHM RUM002N05

1.2V Drive Nch MOSFET
RUM002N05
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
VMT3
Features
1) High speed switing.
2) Small package(VMT3).
3)Ultra low voltage drive(1.2V drive).
Abbreviated symbol : RH
 Application
Switching
 Packaging specifications
Package
Code
Basic ordering unit (pieces)
RUM002N05
Type
 Inner circuit
Taping
T2L
8000

(3)
∗1
∗2
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Continuous
ID
Drain current
Pulsed
IDP *1
Continuous
IS
Source current
(Body Diode)
Pulsed
ISP *1
Power dissipation
PD *2
Channel temperature
Range of storage temperature
(1)
Limits
Unit
50
8
200
800
125
800
150
V
V
mA
mA
mA
mA
mW
Tch
Tstg
150
55 to +150
C
C
Symbol
Rth (ch-a)*
Limits
833
Unit
C / W
(1) GATE
(2) SOURCE
(3) DRAIN
(2)
∗1 BODY DIODE
∗2 ESD PROTECTION DIODE
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
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○
1/5
2010.02 - Rev.A
RUM002N05
Data Sheet
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=8V, VDS=0V
50
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=50V, VGS=0V
VGS (th)
0.3
-
1.0
V
VDS=10V, ID=1mA
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Min.
-
1.6
2.2
ID=200mA, VGS=4.5V
-
1.7
2.4
ID=200mA, VGS=2.5V
-
1.9
2.7
-
2.0
4.0
ID=40mA, VGS=1.5V
-
2.4
7.2
ID=20mA, VGS=1.2V
l Yfs l *
0.4
-
-
S
ID=200mA, VDS=10V
RDS (on)*

ID=100mA, VGS=1.8V
Input capacitance
Ciss
-
25
-
pF
VDS=10V
Output capacitance
Coss
-
6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
4
-
ns
ID=100mA, VDD 30V
tr *
-
6
-
ns
VGS=4.5V
td(off) *
-
15
-
ns
RL=300
tf *
-
55
-
ns
RG=10
Rise time
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol
Min.
Typ.
Forward voltage
VSD *
Max.
1.2
Unit
V
Conditions
Is=200mA, VGS=0V
*Pulsed
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2/5
2010.02 - Rev.A
RUM002N05
Data Sheet
Electrical characteristic curves
0.4
0.3
Ta=25°C
Pulsed
VGS= 1.2V
0.2
VGS= 1.0V
0.1
1
VGS= 4.5V
VGS= 2.5V
VGS=1.8V
VGS=1.5V
0.3
Ta=25°C
Pulsed
VGS=1.2V
0.2
VGS=1.0V
0.1
0
0.6
0.8
1
0
2
VGS=1.2V
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.5V
1
0.1
0.01
0.1
VGS= 4.5V
Pulsed
1
0.1
0.01
1
0.1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
1
0.1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( IV )
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VGS= 1.5V
Pulsed
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
2
VGS= 2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
1
0.1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
1
0.1
0.01
1.5
100
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( II )
100
1
Fig.3 Typical Transfer Characteristics
DRAIN-CURRENT : ID[A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
0.5
GATE-SOURCE VOLTAGE : VGS[V]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
DRAIN-CURRENT : ID[A]
VGS= 1.8V
Pulsed
0
10
100
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( I )
100
8
Fig.2 Typical Output Characteristics( II )
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
Fig.1 Typical Output Characteristics( I )
10
6
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Ta= 25°C
Pulsed
4
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
0.4
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.01
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( III )
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
0.2
0.1
0.001
0
0
VDS= 10V
Pulsed
VGS=0.8V
VGS= 0.8V
100
DRAIN CURRENT : ID[A]
VGS= 4.5V
VGS= 2.5V
VGS=1.8V
VGS=1.5V
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
0.4
1
100
VGS= 1.2V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( V )
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( VI )
3/5
2010.02 - Rev.A
1
VDS= 10V
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
VGS=0V
Pulsed
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
0.001
0.01
0.1
0
1
DRAIN-CURRENT : ID[A]
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
1000
10
Ta=25°C
Pulsed
9
8
ID= 20mA
7
6
ID=200mA
5
4
3
2
1
0
0
5
10
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
Ta=25°C
VDD=30V
VGS=4.5V
tf
100
CAPACITANCE : C [pF]
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[]
1
Data Sheet
SOURCE CURRENT : Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
RUM002N05
RG=10
Pulsed
td(off)
tr
10
100
Ta=25°C
f=1MHz
VGS=0V
Ciss
10
Crss
1
Coss
td(on)
1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.13 Switching Characteristics
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c 2010 ROHM Co., Ltd. All rights reserved.
○
0.1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
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2010.02 - Rev.A
RUM002N05
Data Sheet
Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
10%
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.1-2 Switching waveforms
Fig.1-1 Switching time measurement circuit
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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2010.02 - Rev.A
Notice
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R1010A