Preliminary Datasheet R2A20114AFP/ASP Continuous Conduction Mode Interleaving PFC Control IC R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Description R2A20114AFP/ASP is a boost converter control IC with PFC (Power Factor Correction). Employing continuous conduction mode interleaving PFC, it performs higher efficiency and lower switching noise even for high power use. Interleaving control of the boost converters, namely, producing 180 degrees phase shift between the output signals (GD1,2) driving the boost converters, enables the system to perform high conversion efficiency and low switching noises and, at the same time, to reduces ripple currents in input and output current and then this allows use of smaller components such as boost inductors, input filters and output capacitors. R2A20114AFP/ASP integrates a various kinds of protection circuits, such as the detection circuit of breaking of wire in feedback loop, two modes of over voltage protection circuits, over current protection circuit and error output circuit (*1), which improve the reliability of the power supply system and reduce the number of component parts on the system. Features Maximum Ratings Supply voltage Vcc: 24 V Operating junction temperature Tjopr: from –40 to +150 degrees centigrade Electrical characteristics VFB feedback voltage VREF: 2.5 V 1.5% UVLO (Undervoltage Lockout) operation start voltage VH: 10.4 V 0.7 V UVLO operation shutdown voltage VL: 8.9 V 0.5 V UVLO hysteresis voltage Hysuvl : 1.5 V 0.5 V Functions Boost converter control with continuous conduction mode Interleaving control Frequency modulation (*2) Brownout Phase drop (*1) External clock synchronization input External clock synchronization output (*1) Two modes of over voltage protections Mode 1: Dynamic OVP preventing over voltage after sudden variation of load. Mode 2: Static OVP preventing over voltage in the period of normal operation. Feedback loop wire breaking/open detector Dual over voltage protection circuits (*1): FB and OVP2 terminals Current balance control Phase 1 and Phase 2 independent over current protection Package line-up Pb-free LQFP-40 (R2A20114AFP) Pb-free SOP-20 (R2A20114ASP) Notes: *1 Supported only by R2A20114AFP *2 Frequency modulation periods (dfm) of R2A20114ASP are fixed. R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 1 of 16 R2A20114AFP/ASP Preliminary The Function List of R2A20114AFP/ASP Item PFC control Current detection method Package Protection circuits Brownout detection 2nd OVP Phase error Noise reduction Jitter generation (Frequency modulation) Synchronization with external signal Efficiency improvement Note: Input R2A20114ASP R2A20114AFP Continuous conduction mode interleaving Shunt resistor SOP-20 LQFP-40 Supported Supported Not supported Supported Not supported Supported Supported Supported (But, frequency modulation 1 period (ffm)(* ) is fixed) Supported Supported Output Phase drop Not supported Not supported Supported Supported *1 Refer to the figure depicted below: Switching frequency dfm ffm = 1/T time Ordering Information Part No. R2A20114AFPW0 R2A20114AFPW5 R2A20114ASPW0 R2A20114ASPW5 Package Name FP-40EV Package Code PLQP0040JB-C Package Abbreviation FP Taping Abbreviation (Quantity) W (2000 pcs/reel) FP-20DAV PRSP0020DD-B SP W (2000 pcs/reel) Remarks non-HF HF non-HF HF Note: HF: Halogen-Free R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 2 of 16 R2A20114AFP/ASP Preliminary 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 1 2 3 4 5 6 7 8 9 10 N.C. N.C. VCC N.C. CS1 CS2 CSO1 CSO2 IRAMP N.C. ERROR OFF RS SS COMP N.C. FB OVP2 N.C. N.C. FMR FMC VREF BO VAC PD AGND E-DELAY N.C. N.C. 40 39 38 37 36 35 34 33 32 31 N.C. N.C. CT RT/SYNC SYNC-O N.C. GD1 PGND GD2 N.C. Pin Arrangement of R2A20114AFP (Top view) Pin Functions of R2A20114AFP Pin No. 1 2 3 4 5 6 7 8 9, 10 11 12 13 14 15 16 17 18 19-21 22 23 24 25 26 27 28 29-31 32 33 34 35 36 37 38 39, 40 Pin Name FMR FMC VREF BO VAC PD AGND E-DELAY N.C. ERROR OFF RS SS COMP N.C. FB QVP2 N.C. IRAMP CSO2 CSO1 CS2 CS1 N.C. VCC N.C. GD2 PGND GD1 N.C. SYNC-O RT/SYNC CT N.C. Function Frequency modulation setting resistor connecting terminal Frequency modulation setting capacitor connecting terminal Reference voltage output terminal Brownout input terminal AC voltage input terminal Phase drop input terminal Analog ground Delay of the Error signal setting terminal Open Error output terminal Shutdown terminal (VCC Reset) Current correction setting resistor connecting terminal Soft start setting capacitor connecting terminal Error amplifier output terminal (to be phase-compensated) Open Error amplifier input terminal (feedback voltage input terminal) OVP2 input terminal Open Ramp waveform setting resistor connecting terminal Current sense amplifier 2 output terminal (to be phase-compensated) Current sense amplifier 1 output terminal (to be phase-compensated) Current sense 2 input terminal Current sense 1 input terminal Open Supply voltage terminal Open Converter 2 Power MOSFET drive terminal Power ground Converter 1 Power MOSFET drive terminal Open Synchronization signal output terminal Frequency setting resistor connecting terminal / Sync. Signal input terminal Frequency setting capacitor connecting terminal Open R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 3 of 16 R2A20114AFP/ASP Preliminary Pin Arrangement of R2A20114ASP RT/SYNC 1 20 GD1 CT 2 19 PGND FM 3 18 GD2 VREF 4 17 VCC BO 5 16 CS1 VAC 6 15 CS2 AGND 7 14 CSO1 RS 8 13 CSO2 SS 9 12 IRAMP 10 11 FB COMP (Top view) Pin Functions of R2A20114ASP Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pin Name RT/SYNC CT FM VREF BO VAC AGND RS SS COMP FB IRAMP CSO2 CSO1 CS2 CS1 VCC GD2 PGND GD1 Function Frequency setting timing resistor connecting terminal / Sync. signal input terminal Frequency setting timing capacitor connecting terminal Frequency modulation setting timing capacitor connecting terminal Reference voltage output terminal Brownout input terminal AC voltage input terminal Analog ground Current correction setting resistor connecting terminal Soft start setting capacitor connecting terminal Error amplifier output terminal (to be phase-compensated) Error amplifier input terminal (feedback voltage input terminal) Ramp waveform setting resistor connecting terminal Current sense amplifier 2 output terminal (to be phase-compensated) Current sense amplifier Output 1 output terminal (to be phase-compensated) Current sense 2 input terminal Current sense 1 input terminal Supply voltage terminal Converter 2 Power MOSFET drive terminal Power ground Converter 1 Power MOSFET drive terminal R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 4 of 16 R2A20114AFP/ASP Preliminary Block Diagram of R2A20114AFP VCC 28 VREF 200nA UVL CS1 26 VREF 3 VREF 34 GD1 22 IRAMP 32 GD2 33 PGND OCP1 0.31V VCC CURRENT FORMING BLOCK 1 OSC1 OCP1 INTERLEAVE Logic 1 CSO1 24 VAC 5 RS 13 OVP2 CURRENT FORMING BLOCK 2 OSC2 OCP2 CSO2 23 INTERLEAVE Logic 2 VREF 200nA CS2 25 OCP2 0.31V UVL PD 6 2.5V 200nA SOVP OCP1 E-DELAY 8 ERROR ERROR BLOCK 11 VREF 500nA FBOPEN OCP2 OVP2 GD1 DOVP PROTECTION BLOCK 18 OVP2 GD2 VREF 300nA Latch (UVL Reset) OFF 12 E-AMP 100kΩ 300nA UVL 4V 0.82V/0.81V CT 10kΩ OSC1 OSC1 CT 38 FB 15 COMP 14 SS 2.5V BO 4 RT/SYNC 37 17 VCC 28μA OSC2 OSC2 SYNC-O FMR 1 UVL SYNC-O 2 36 7 FMC SYNC-O AGND R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 5.7V Page 5 of 16 R2A20114AFP/ASP Preliminary Block Diagram of R2A20114ASP VCC 17 VREF 200nA UVL CS1 16 VREF 4 VREF 20 GD1 12 IRAMP 18 GD2 19 PGND OCP1 0.31V VCC CURRENT FORMING BLOCK 1 OSC1 OCP1 INTERLEAVE Logic 1 CSO1 14 VAC 6 RS 8 FB CURRENT FORMING BLOCK 2 OSC2 OCP2 CSO2 13 INTERLEAVE Logic 2 VREF 200nA CS2 15 OCP2 0.31V UVL SOVP FBOPEN DOVP PROTECTION BLOCK VREF 800nA E-AMP 300nA UVL 4V 0.82V/0.81V CT 10kΩ OSC1 OSC1 CT 2 FB 10 COMP 9 SS 2.5V BO 5 RT/SYNC 1 11 VCC 28μA OSC2 OSC2 UVL 3 7 FM AGND R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 5.7V Page 6 of 16 R2A20114AFP/ASP Preliminary Absolute Maximum Ratings Item Supply voltage GD1 and 2 Peak current DC current Vref terminal current Terminal current RS terminal current RT terminal current IRAMP terminal current BO clamp current Terminal voltage Vref terminal voltage SS terminal voltage Power dissipation Operating junction temperature Storage temperature Symbol VCC Ipk-gd1, Ipk-gd2 Idc-gd1, Idc-gd2 Iref It-group Irs Irt Iramp Ibo Vt-group Vt-ref Vt-ss Pt Tj-opr Tstg Value –0.3 to +24 1 0.1 –5 1 –500 –200 –200 300 –0.3 to Vref –0.3 to Vref+0.3 –0.3 to Vref+1 1 –40 to +150 –55 to +150 Unit V A A mA mA A A A A V V V W °C °C Note 3 3, 4 3 3 3, 5 3 3 3 3 3, 6 3 3 3, 7 Notes: 1. Rated voltages are with reference to the AGND and PGND terminal. 2. For the direction of Rated currents, (+) denotes the current flowing into the IC, and (–) denotes the current flowing out of the IC. 3. Ambience temperature, Ta is 25 degrees centigrade. 4. Transient current when driving a capacitive load. 5. Rated currents of the terminals listed below: COMP, CSO1, CSO2 6. Rated voltages of the terminals listed below: in the case of R2A20114AFP: CS1, CS2, VAC, RS, FB, PD, BO, ERROR, E-DLAY, OFF, OVP2, FMC, FMR, RT/SYNC, IRAMP, SYNC-O, CT, COMP, CSO1, CSO2 in the case of R2A20114ASP: CS1, CS2, VAC, RS, FB, BO, IRAMP, FM, RT/SYNC, CT, COMP, CSO1, CSO2 7. Thermal resistor in the case of R2A20114AFP: ja = 85.3 degrees centigrade/W in the case of R2A20114ASP: ja = 120 degrees centigrade/W These values are obtained under the condition that the IC is mounted on the glass epoxy board, of which size is 50 50 1.6 [mm] and wiring density is 10%. R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 7 of 16 R2A20114AFP/ASP Preliminary Electrical Characteristics (Ta = 25°C, VCC = 12 V, CT = 1000 pF, RT = 27 k, CS1, CS2 = GND, IRAMP = 10 k, BO = 1 V, VAC = 0 V, RS = 220 k, FMC = GND (*1), FM = GND (*2), FB = COMP) Item Supply VREF Error amplifier Brownout Oscillator Symbol Typ Max Unit Test Conditions UVLO turn-on threshold Vuvlh 9.7 10.4 11.1 V UVLO turn-off threshold Vuvll 8.4 8.9 9.4 V UVLO hysteresis Hysuvl 1.0 1.5 2.0 V Standby current Istby — 100 160 A Operating current Icc — 5 7.5 mA Output voltage Vref 4.85 5.00 5.15 V Line regulation Vref-line — 5 20 mV Isource = –1 mA, VCC = 10 V to 24 V Load regulation Vref-load — 5 20 mV Isource = –1 mA to -5 mA Temperature stability dVref — 80 — ppm/°C Feedback voltage VCC = 8.9 V Isource = –1 mA 3 Ta = –40 to 125°C (* ) Vfb 2.462 2.500 2.538 V FB-COMP Short 1 Ifb –0.5 –0.3 –0.05 A Measured pin: FB Input bias current (* ) 2 Ifb –1.3 –0.8 –0.25 A Measured pin: FB Open loop gain Av — 40 — dB (* ) Upper clamp voltage Vclamp-comp 3.8 4.0 4.3 V FB = 2.0 V, COMP: Open Low voltage Vl-comp 0.0 0.1 0.3 V FB = 3.0 V, COMP: Open Source current Isrc-comp –190 –135 –80 A FB = 1.5 V, COMP = 2.5 V Sink current 1 Isnk-comp1 — 120 — A (* ) Sink current 2 Isnk-comp2 220 320 420 A FB =3.5 V, COMP = 2.5 V Transconductance gm 120 200 290 s FB = 2.45 V ↔ 2.55 V, COMP = 2.5 V Input bias current (* ) 3 3 PFC enable voltage Von-pfc 0.74 0.82 0.9 V Input pin: BO PFC disable voltage Voff-pfc 0.73 0.81 0.89 V Input pin: BO Initial accuracy fout 70 78 86 kHz Measured pin: OUT, FMC = 0 V fout temperature stability dfout/dTa — 0.1 — %/°C Ta = –40 to 125°C (* ) fout voltage stability fout-line –1.5 0.5 1.5 % VCC = 12 V to 18 V CT top voltage Vct-H — 3.6 4.0 V (* ) 1.15 1.25 1.35 V 6 11 16 A FMC = 1 V (* )/ 2 FM = 1 V (* ) –16.5 –11.5 –6.5 A FMC = 1 V (* )/ 2 FM = 1 V (* ) RT voltage Vrt 1 1 FMC sink current (* )/ 2 FM sink current (* ) Isnk-fmc (* )/ 2 Isnk-fm (* ) 1 1 3 3 1 1 FMC source current (* )/ 2 FM source current (* ) Iso-fmc (* )/ 2 Iso-fm (* ) FM magnitude change dfm 19 24 29 kHz FMC = 5 V (* )/FM = 5 V (* ) 3 4 (* , * ) 1 ffm1 0.25 0.38 0.5 kHz FMC = 6.8 nF, FMR = 4 V 4 (* ) 1 ffm2 14 25 35 kHz FMC = 220 pF, FMR = 1.2 V 4 (* ) ffm 6 10 14 kHz FM = 220 pF (* ) FM frequency 1 (* ) FM frequency 2 (* ) 2 FM frequency (* ) Notes: *1 *2 *3 *4 Min 1 2 4 Applied to R2A20114AFP Applied to R2A20114ASP Design Specification (Reference data) Refer to the figure shown below: Switching frequency dfm ffm = 1/T time R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 8 of 16 R2A20114AFP/ASP Preliminary Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12 V, CT = 1000 pF, RT = 27 k, CS1, CS2 = GND, IRAMP = 10 k, BO = 1 V, VAC = 0 V, RS = 220 k, FMC = GND (*1), FM = GND (*2), FB = COMP) Item Synchronization Current slope Symbol Min Typ Max Unit SYNC threshold voltage (rising) Vsync 2.0 2.5 3.0 V SYNC Min. pulse Psync 2 — — s SYNC-OUT shunt current 1 (* ) Isync-s 5.0 — — mA SYNC-OUT leakage current 1 (* ) Isync-l — — 1.0 A RS output voltage 1 Vrs1 0.42 0.51 0.6 V Test Conditions VAC = 0 V, VOVP2 = 2.5 V RS output voltage 2 Vrs2 –0.1 0 0.1 V VAC = 2.5 V, VOVP2 = 0 V VAC bias current Ivac –0.8 –0.5 –0.2 A Measured pin: VAC Soft start Source current Iss –40 –28 –16 A SS = 2 V Phase drop Phase drop threshold 1 voltage (* ) Vpd 2.4 2.5 2.6 V Hya-pd 150 200 250 mV 1 Phase drop hysteresis (* ) 1 AMP1, 2 Gate drive 1, 2 PD bias current (* ) Ipd 0.05 0.2 0.5 A CSO offset voltage1 Voffset 0.68 0.88 1.0 V Vcs = 0 V CSO offset voltage2 Vcaoh 2.83 3 3.17 V Vcs = 0.24 V CS Bias current Ics-r –0.4 –0.2 –0.05 A Measured pin: CS1, 2 Gate drive rise time tr-gd — 30 100 ns CL = 500 pF Gate drive fall time tf-gd — 30 100 ns CL = 500 pF Gate drive low voltage Over voltage protection Measured pin: PD Vol1-gd — 0.05 0.2 V Isink = 10 mA Vol2-gd — 1 1.25 V Isink = 0.25 mA, VCC = 5 V Gate drive high voltage Voh-gd 11.5 11.9 — V Isource = –10 mA Minimum duty cycle Dmin-out — — 0 % Maximum duty cycle Dmax-out 90 95 98 % Dynamic OVP Threshold voltage Vdovp VFB 1.025 VFB 1.040 VFB 1.055 V Static OVP Threshold voltage Vsovp VFB 1.065 VFB 1.080 VFB 1.095 V COMP = OPEN 30 80 130 mV COMP = OPEN VFB 1.065 VFB 1.080 VFB 1.095 A 30 80 130 mV COMP = OPEN Measured pin: OVP2 Static OVP Hysteresis Hys-sovp 1 OVP2 Threshold voltage (* ) 1 OVP2 Hysteresis (* ) Vovp2 Hys-ovp2 1 OVP2 Bias current (* ) Iovp2 –0.8 –0.5 –0.2 A FB Open Detect Threshold voltage Vfbopen 0.45 0.5 0.55 V FB Open Detect hysteresis Vfbopen 0.16 0.2 0.24 V 1 Over OCP Threshold voltage (* ) VCL 0.28 0.31 0.34 V current protection Delay to output td-CL — 100 250 ns Notes: *1 Applied to R2A20114AFP *2 Applied to R2A20114ASP R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 9 of 16 R2A20114AFP/ASP Preliminary Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12 V, CT = 1000 pF, RT = 27 k, CS1, CS2 = GND, IRAMP = 10 k, BO = 1 V, VAC = 0 V, RS = 220 k, FMC = GND (*1), FM = GND (*2), FB = COMP) Item Error signal Symbol 1 ERROR shunt current (* ) Min Typ Max Unit Ierror-s 5.0 — — mA ERROR leakage current (* ) Ierror-l — — 1.0 A Phase error detect point Perror 1.1 1.35 1.6 — 1 1 OFF threshold voltage (* ) Voff 3.3 4.0 4.7 V E-DELAY charge current (* ) 1 Ied-c –55 –36 –20 A E-DELAY discharge current 1 (* ) Ied-d 20 36 55 A E-DELAY threshold voltage 1 (* ) Vdelay 2.35 2.45 2.55 V Test Conditions Vcso1 or 2 = 2.5 V, 5 Vcso2 or 1: sweep (* ) Notes: *1 Applied to R2A20114AFP *2 Applied to R2A20114ASP *5 Refer to the figure shown below: V'cso1(or 2) Vcso2(or 1) CSO1(or 2) CSO2(or 1) ERROR Perror = V'cso1(or 2)[V] – 0.55[V] Vcso2(or 1)[V] – 0.55[V] R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 10 of 16 R2A20114AFP/ASP Preliminary Timing Chart 1. Vcc Start-up and Stop Timing VCC 10.4V (VH) 8.9V (VL) 5V 4.0V VREF VREF GOOD (Internal signal) BO 0.82V (Von-pfc) PFC-OFF (Internal signal) COMP SS Soft Start GD FB R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 11 of 16 R2A20114AFP/ASP Preliminary 2. Stop Timing 0.81V (Voff-pfc) BO PFC-OFF (Internal signal) SS GD Normal operation FB 3. Overvoltage Protection (OVP) Vsovp and Vovp2:VFB×1.08V Hys-sovp: 80mV Vdovp: VFB×1.04V VFB Isnk-comp2 GD OFF (Internal signal) COMP GD R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Page 12 of 16 R2A20114AFP/ASP Preliminary 4. Phase Drop (Applied to R2A20114AFP) 2.5V PD GD1 GD2 5. ERROR (Applied to R2A20114AFP) High Voltage ERROR Low Voltage (0V) Normal Operation R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 Abnormal Operation (Phase Error, OVP2, E-Delay) Page 13 of 16 R2A20114AFP/ASP Preliminary System Diagram (Applied to R2A20114AFP) L2 D2 L1 D1 Dr1 Vout Ro2 Rfb2 Ro1 Rfb1 + Dr2 Cin Cout CS1 CS2 VCC 28 VREF 200nA CS1 26 CS1 UVL VREF VREF 3 OCP1 0.31V VCC CURRENT FORMING BLOCK 1 OSC1 OCP1 INTERLEAVE Logic 1 24 CSO1 5 VAC 13 RS 22 OSC2 INTERLEAVE Logic 2 VREF PD 32 GD2 To Dr2 200nA OCP2 0.31V MCU IRAMP OCP2 23 CS2 25 CS2 GD1 To Dr1 OVP2 CURRENT FORMING BLOCK 2 CSO2 34 33 UVL PGND 6 2.5V 200nA Vref SOVP E-DELAY ERROR OCP1 8 OCP2 ERROR BLOCK 11 VREF 500nA FBOPEN OVP2 GD1 DOVP PROTECTION BLOCK 18 OVP2 GD2 VREF 300nA Latch (UVL Reset) OFF 12 E-AMP 100kΩ BO CT Vref FMR UVL 4V 0.82V/0.81V 37 CT 15 10kΩ OSC1 OSC1 38 FB 2.5V 4 300nA RT/SYNC 17 VCC 28μA 14 OSC2 OSC2 SYNC-O 1 UVL SYNC-O 2 FMC R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 36 SYNC-O Vref COMP SS 5.7V 7 AGND Page 14 of 16 R2A20114AFP/ASP Preliminary System Diagram (Applied to R2A20114ASP) L2 D2 L1 D1 Vout Rfb2 Dr1 + Dr2 Cin Cout CS1 CS2 Rfb1 VCC 17 VREF 200nA CS1 16 CS1 UVL VREF VREF 4 OCP1 0.31V VCC CURRENT FORMING BLOCK 1 OSC1 OCP1 INTERLEAVE Logic 1 14 CSO1 6 VAC 8 RS 12 IRAMP OSC2 OCP2 13 INTERLEAVE Logic 2 VREF CS2 15 CS2 GD1 To Dr1 FB CURRENT FORMING BLOCK 2 CSO2 20 18 GD2 To Dr2 200nA OCP2 0.31V 19 UVL PGND SOVP FBOPEN DOVP PROTECTION BLOCK VREF 800nA E-AMP BO CT UVL 4V 0.82V/0.81V 1 CT 10 10kΩ OSC1 OSC1 2 FB 2.5V 5 300nA RT/SYNC 11 VCC 28μA 9 OSC2 OSC2 UVL 3 FM R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 COMP SS 5.7V 7 AGND Page 15 of 16 R2A20114AFP/ASP Preliminary Package Dimensions R2A20114AFP JEITA Package Code P-LQFP40-7x7-0.65 RENESAS Code PLQP0040JB-C Previous Code FP-40EV MASS[Typ.] 0.2g NOTE) 1. DIMENSIONS"*1"AND"*2" DO NOT INCLUDE MOLD FLASH 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. HD *1 D 30 21 31 20 c HE E bp *2 Reference Symbol ZE Terminal cross section (Ni/Pd/Au plating) 11 40 1 D E A2 HD HE A A1 bp b1 c c1 θ e x y ZD ZE L L1 10 ZD c θ A F A2 Index mark L A1 S L1 Detail F *3 e bp x M y S Dimension in Millimeters Nom 7.0 7.0 1.40 9.0 9.0 Max 0.08 0.17 9.2 9.2 1.70 0.13 0.22 0.22 0.27 0.10 0.15 0.20 Min 8.8 8.8 0° 8° 0.65 0.13 0.10 0.575 0.575 0.40 0.50 0.60 1.0 R2A20114ASP JEITA Package Code P-SOP20-5.5x12.6-1.27 RENESAS Code PRSP0020DD-B *1 Previous Code FP-20DAV D MASS[Typ.] 0.31g NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. F 20 11 c HE *2 E bp Index mark Terminal cross section Reference Symbol (Ni/Pd/Au plating) 10 1 Z *3 e bp x M L1 A1 θ A S L y S Detail F R03DS0051EJ0100 Rev.1.00 Aug 29, 2011 D E A2 A1 A bp b1 c c1 θ HE e x y Z L L1 Dimension in Millimeters Min Nom Max 12.60 13.0 5.50 0.00 0.10 0.34 0.40 0.20 2.20 0.46 0.15 0.20 0.25 0° 7.50 0.50 7.80 1.27 0.70 1.15 8° 8.00 0.12 0.15 0.80 0.90 Page 16 of 16 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2011 Renesas Electronics Corporation. All rights reserved. Colophon 1.1