Ordering number : EN8278B CPH5901 N-Channel JFET and NPN Bipolar Transistor 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package Common drain and emitter • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage VDSX VGDS Gate-to-Drain Voltage Gate Current Drain Current IG ID Allowable Power Dissipation PD 15 Mounted on a ceramic board (600mm2×0.8mm) V --15 V 10 mA 50 mA 350 mW [TR] Collector-to-Base Voltage VCBO VCEO VEBO Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) V 150 IB PC Collector Dissipation V V 6 IC ICP Base Current 55 50 mA 300 mA 30 mA Mounted on a ceramic board (600mm2×0.8mm) 350 mW Mounted on a ceramic board (600mm2×0.8mm) 500 mW [TR] Total Power Dissipation Junction Temperature PT Tj Storage Temperature Tstg 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-007 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 3 Packing Type : TL Marking 1A 1.6 2.8 0.05 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base Electrical Connection 5 4 LOT No. 4 RANK 5 CPH5901F-TL-E CPH5901G-TL-E 0.15 2.9 0.2 0.6 Package Dimensions 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 August, 2013 2 60612 TKIM/62005AC MSIM TB-00001557/32505AC TSIM TA-3705 No.8278-1/8 CPH5901 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Noise Figure IG=--10μA, VGS=0V VGS=--10V, VDS=0V --15 VDS=5V, ID=100μA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz --0.2 V --1.0 --0.6 6.0* 25 nA --1.4 V 20.0* mA 50 mS 10 pF Crss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1kHzz 3.0 pF NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB ICBO IEBO VCB=35V, IE=0A 0.1 μA VEB=4V, IC=0A 0.1 μA VCE=6V, IC=1mA Gain-Bandwidth Product hFE fT VCE=6V, IC=10mA 200 Output Capacitance Cob 1.7 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=6V, f=1MHz IC=50mA, IB=5mA [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 135 IC=50mA, IB=5mA 400 MHz pF 0.08 0.4 mV 0.8 1.0 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 55 V IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=10μA, IC=0A 6 tstg tf See specified Test Circuit. V 0.15 ns 0.75 ns 0.20 ns * : The CPH5901 is classified by IDSS as follows : (unit : mA) Rank IDSS F 6.0 to 12.0 G 10.0 to 20.0 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 OUTPUT INPUT VR 50Ω RB + 220μF RL + 470μF VBE= --5V VCC=20V 10IB1= --10IB2= IC=10mA Ordering Information Package Shipping CPH5901F-TL-E Device CPH5 3,000pcs./reel CPH5901G-TL-E CPH5 3,000pcs./reel memo Pb Free No.8278-2/8 CPH5901 ID -- VDS 16 ID -- VDS [FET] 20 [FET] VGS=0V 16 Drain Current, ID -- mA 12 10 --0.1V 8 --0.2V 6 4 --0.3V --0.6V 0.4 0.8 1.2 1.6 Drain-to-Source Voltage, VDS -- V [FET] A 0m =2 S mA I DS 15 A m 10 A 6m 0 --0.2 Gate-to-Source Voltage, VGS -- V 10 20m 1 mA =6 SS 3 ID 2 10 7 5 3 1.0 [FET] 7 5 3 2 5 7 2 10 3 | yfs | -- IDSS 100 5 ITR10332 [FET] VDS=5V VGS=0V f=1kHz 7 5 3 2 10 2 3 5 7 2 10 Drain Current, ID -- mA Ciss -- VDS 3 3 3 5 5 7 VGS=0V f=1MHz 10 7 5 3 2 1.0 2 10 3 Drain Current, IDSS -- mA ITR10333 Crss -- VDS [FET] 2 Input Capacitance, Ciss -- pF 10 ITR10330 Drain Current, IDSS -- mA Forward Transfer Admittance, | yfs | -- mS 0mA 8 VDS=5V ID=100μA 3 10 Reverse Transfer Capacitance, Crss -- pF Forward Transfer Admittance, | yfs | -- mS A 5 6 --0.1 [FET] 7 4 --1.0 0 VDS=5V f=1kHz --0.4V --0.5V VGS(off) -- IDSS ITR10331 | yfs | -- ID 100 2 2 40 0 --0.4 --0.3V Drain-to-Source Voltage, VDS -- V 20 --0.6 --0.2V 0 30 --0.8 8 ITR10329 VDS=5V --1.0 --0.1V 2.0 ID -- VGS --1.2 12 --0.6V Cutoff Voltage, VGS(off) -- V 0 0 VGS=0V 4 --0.4V --0.5V 2 Drain Current, ID -- mA Drain Current, ID -- mA 14 5 ITR10334 [FET] VGS=0V f=1MHz 7 5 3 2 1.0 7 5 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 ITR10335 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 ITR10336 No.8278-3/8 CPH5901 NF -- f 14 12 3m A 0 10 2 6 4 mA kΩ 8 10 10 10 A 1m Ω 1k 4 2 5 100 2 5 2 1k 5 10k 2 PD -- Ta 400 0 10 5 100k 2 5 1M ITR10337 Frequency, f -- Hz [FET] VDS=5V Rg=1kΩ I D= 8 2 Allowable Power Dissipation, PD -- mW 14 Noise Figure, NF -- dB 10 Ω 00 =5 Rg Noise Figure, NF -- dB 12 6 NF -- f [FET] VDS=5V ID=10mA 2 5 100 2 5 1k 2 5 10k 2 5 100k 2 5 1M ITR10338 Frequency, f -- Hz [FET] 350 M ou 300 nt ed 250 on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 ✕ 0. 8m m ) 50 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IC -- VCE 50 0μA Collector Current, IC -- mA IC -- VCE [TR] 12 A 400μ 350μA 300μA 250μA 50 0μ A 45 160 IT09862 40 200μA 30 150μA 20 100μA 50μA 10 [TR] 50μA 45μA 10 Collector Current, IC -- mA 0 8 40μA 35μA 30μA 6 25μA 20μA 4 15μA 10μA 5μA 2 IB=0μA 0 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR10340 IC -- VBE 160 IB=0μA 0 1.0 [TR] hFE -- IC 2 ITR10341 [TR] VCE=6V VCE=6V 140 DC Current Gain, hFE 100 Ta=75°C 25°C --25°C Collector Current, IC -- mA 1000 120 80 60 40 7 5 3 Ta=75°C 2 25°C --25°C 100 7 20 5 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR10342 3 0.1 2 3 5 1.0 2 3 5 10 2 3 Collector Current, IC -- mA 5 100 2 3 ITR10343 No.8278-4/8 CPH5901 f T -- IC [TR] VCE=6V [TR] f=1MHz 5 3 3 2 100 7 5 2 10 7 5 3 2 3 1.0 2 1.0 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA 2 100 ITR10344 Cob -- VCB 3 5 [TR] 5 3 2 1.0 3 5 7 10 ITR10345 VCE(sat) -- IC [TR] IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 2 1.0 3 2 10 7 Emitter-to-Base Voltage, VEB -- V f=1MHz Output Capacitance, Cob -- pF Cib -- VEB 5 Input Capacitance, Cib -- pF Gain-Bandwidth Product, f T -- MHz 7 1.0 7 5 3 2 0.1 75°C Ta= °C --25 7 5 °C 25 3 7 2 1.0 5 5 7 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC 10 7 100 ITR10346 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA [TR] 2 100 ITR10347 PC -- Ta 400 [TR] IC / IB=10 350 Collector Dissipation, PC -- mW Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 2 1.0 Ta= --25°C 7 3 1.0 25°C 75°C 5 M ou 300 nt 250 ed on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 ✕ 0. 8m m ) 50 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR10348 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09863 No.8278-5/8 CPH5901 Embossed Taping Specification CPH5901F-TL-E, CPH5901G-TL-E No.8278-6/8 CPH5901 Outline Drawing CPH5901F-TL-E, CPH5901G-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.8278-7/8 CPH5901 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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