Ordering number : EN6962C CPH5902 N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly The CPH5902 contains a 2SK2394-equivalent chip and a 2SC4639-equivalent chip in one package Drain and emitter are shared • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage VDSX VGDS Gate-to-Drain Voltage Gate Current Drain Current IG ID Allowable Power Dissipation PD 15 Mounted on a ceramic board (600mm2×0.8mm) V --15 V 10 mA 50 mA 350 mW [TR] Collector-to-Base Voltage VCBO VCEO VEBO Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) V 150 IB PC Collector Dissipation V V 6 IC ICP Base Current 55 50 mA 300 mA 30 mA Mounted on a ceramic board (600mm2×0.8mm) 350 mW Mounted on a ceramic board (600mm2×0.8mm) 500 mW [TR] Total Power Dissipation Junction Temperature PT Tj Storage Temperature Tstg 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-007 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 3 Packing Type : TL Marking RB 1.6 2.8 0.05 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base Electrical Connection 5 4 LOT No. 4 RANK 5 CPH5902G-TL-E CPH5902H-TL-E 0.15 2.9 0.2 0.6 Package Dimensions 3 CPH5 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 60612 TKIM/62005AC MSIM TB-00001588/22004 TSIM TA-101143/52501 TSIM TA-3247 No.6962-1/8 CPH5902 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate Cutoff Current Cutoff Voltage Drain Current IG=--10μA, VGS=0V VGS=--10V, VDS=0V --15 V --1.0 VDS=5V, ID=100μA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz --0.4 --0.7 10.0* nA --1.5 V 32.0* mA Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1kHzz Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz ICBO IEBO VCB=35V, IE=0A 0.1 μA VEB=4V, IC=0A 0.1 μA VCE=6V, IC=1mA Gain-Bandwidth Product hFE fT VCE=6V, IC=10mA 200 Output Capacitance Cob 1.7 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=6V, f=1MHz IC=50mA, IB=5mA 24 38 mS 10.0 pF 2.9 pF 1.0 dB [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 135 IC=50mA, IB=5mA 400 MHz pF 0.08 0.4 mV 0.8 1.0 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 55 V IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=10μA, IC=0A 6 tstg tf See specified Test Circuit. V 0.15 ns 0.75 ns 0.20 ns * : The CPH5902 is classified by IDSS as follows : (unit : mA) Rank IDSS G 10.0 to 20.0 H 16.0 to 32.0 The specifications shown above are for each individual FET or transistor. Switching Time Test Circuit IB1 PC=20μs D.C.≤1% OUTPUT IB2 INPUT 1kΩ RL 2kΩ VR 50Ω + 220μF VBE= --5V + 470μF VCC=20V 10IB1= --10IB2=IC=10mA Ordering Information Package Shipping CPH5902G-TL-E Device CPH5 3,000pcs./reel CPH5902H-TL-E CPH5 3,000pcs./reel memo Pb Free No.6962-2/8 CPH5902 ID -- VDS 20 [FET] ID -- VDS 20 [FET] VGS=0V 16 VGS=0V 12 Drain Current, ID -- mA Drain Current, ID -- mA 16 --0.1V --0.2V 8 --0.3V --0.4V 4 0 0.8 8 --0.3V --0.4V 0 1.2 1.6 2.0 0 2 4 6 8 Drain-to-Source Voltage, VDS -- V ITR10364 ID -- VGS 10 ITR10365 ID -- VGS [FET] 16 [FET] VDS=5V IDSS=15mA VDS=5V 20 --0.5V --0.6V --0.7V Drain-to-Source Voltage, VDS -- V 22 --0.2V 4 --0.6V 0.4 12 --0.5V --0.7V 0 --0.1V 14 4 m A 6 10 4 15 6 mA S =2 8 8 25 °C 2 2 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- mS A A 30m 2 10 7 5 3 --0.6 --0.4 --0.2 | yfs | -- IDSS 100 m =15 I DSS 3 --0.8 Gate-to-Source Voltage, VGS -- V [FET] VDS=5V f=1kHz 5 --1.0 IT03287 | yfs | -- ID 7 0 --1.2 0 Forward Transfer Admittance, | yfs | -- mS 0 --1.4 0 ITR10367 [FET] VDS=5V VGS=0V f=1kHz 7 5 3 2 10 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- mA 3 5 7 Ciss -- VDS [FET] VGS=0V f=1MHz Input Capacitance, Ciss -- pF 2 7 5 3 2 --0.1 2 5 IT03289 3 --1.0 10 2 [FET] VDS=5V ID=100μA 7 3 Drain Current, IDSS -- mA 10 IT03288 VGS(off) -- IDSS 2 Cutoff Voltage, VGS(off) -- V 75° C 0m A 10 10 5° C 12 --2 14 12 Ta = Drain Current, ID -- mA 16 ID S Drain Current, ID -- mA 18 3 5 Drain Current, IDSS -- mA IT03290 10 7 5 3 2 1.0 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 ITR10371 No.6962-3/8 CPH5902 Crss -- VDS [FET] 7 3 2 1.0 6 4 2 7 2 1.0 3 5 7 2 10 0 0.01 Drain-to-Source Voltage, VDS -- V NF -- Rg 10 3 [FET] VDS=5V ID=1mA f=1kHz 8 6 4 2 5 7 0.1 2 3 Frequency, f -- kHz 5 7100 ITR10373 PD -- Ta [FET] 400 5 7 1.0 2 3 5 7 10 2 3 350 M ou nt 300 250 ed on ac er am ic 200 bo ar d 150 (6 00 m 100 m2 ✕ 0. 8m m ) 50 0 2 3 5 7 1.0 2 3 Signal Source Resistance, Rg -- kΩ 5 71000 ITR10374 IC -- VCE [TR] 50 5 7 10 A 50 μ 5 7 100 A 400μ 2 3 0 50 200μA 150μA 100μA 50μA 10 0 0.2 0.4 0.6 0.8 120 140 [TR] 25μA 20μA 4 15μA 10μA 5μA IB=0μA 0 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V [TR] 160 IT09864 30μA 6 ITR10376 IC -- VBE 160 100 50μA 45μA 40μA 35μA 8 1.0 Collector-to-Emitter Voltage, VCE -- V 80 2 IB=0μA 0 60 IC -- VCE 10 30 20 40 12 300μA 250μA 40 20 Ambient Temperature, Ta -- °C 350μA 0μ A 4 2 3 Collector Current, IC -- mA 0 0.1 2 3 ITR10372 Allowable Power Dissipation, PD -- mW 7 Noise Figure, NF -- dB [FET] VDS=5V ID=1mA Rg=1kΩ 8 5 5 Collector Current, IC -- mA NF -- f 10 VGS=0V f=1MHz Noise Figure, NF -- dB Reverse Transfer Capacitance, Crss -- pF 10 hFE -- IC 2 ITR10377 [TR] VCE=6V VCE=6V 140 DC Current Gain, hFE 100 80 60 Ta=75 °C 25°C --25°C Collector Current, IC -- mA 1000 120 40 20 0.2 0.4 0.6 0.8 5 3 Ta=75°C 2 25°C --25°C 100 7 5 0 0 7 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR10378 3 0.1 2 3 5 1.0 2 3 5 10 2 3 Collector Current, IC -- mA 5 100 2 3 ITR10379 No.6962-4/8 CPH5902 f T -- IC [TR] cib -- VEB 5 [TR] VCE=6V 5 f=1MHz 3 Input Capacitance, cib -- pF Gain-Bandwidth Product, fT -- MHz 7 3 2 100 7 5 7 5 3 2 1.0 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA 2 100 ITR10380 Cob -- VCB 5 5 [TR] 10 7 5 3 2 2 1.0 1.0 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC 10 7 100 ITR10382 1.0 7 5 3 2 0.1 5°C Ta=7 °C --25 7 5 2 3 5 7 2 10 °C 25 3 5 7 2 100 ITR10383 Collector Current, IC -- mA [TR] PC -- Ta 400 IC / IB=10 7 [TR] Collector Dissipation, PC -- mW 350 5 3 2 1.0 Ta= --25°C 7 25°C 75°C 5 3 1.0 7 10 ITR10381 [TR] 2 2 1.0 5 7 5 IC / IB=10 3 7 5 3 VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 7 Emitter-to-Base Voltage, VEB -- V f=1MHz 3 Output Capacitance, Cob -- pF 10 3 2 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 M ou nt 300 ed on 250 ac er am ic 200 bo ar d (6 00 150 m m2 ✕ 0. 100 8m m ) 50 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR10384 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09865 No.6962-5/8 CPH5902 Embossed Taping Specification CPH5902G-TL-E, CPH5902H-TL-E No.6962-6/8 CPH5902 Outline Drawing CPH5902G-TL-E, CPH5902H-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.6962-7/8 CPH5902 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.6962-8/8