HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485-0400 Rev.4.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +21 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. Outline Renesas Package code: PWQN0008ZA-A (Package name: HWQFN-8 <TNP-8TV>) 5 7 6 200 8 Note: 9 9 5 4 4 3 3 1 2 2 1 5 6 7 8 1. Collector 2. Collector 3. Collector 4. Emitter 5. Emitter 6. Base 7. Emitter 8. Emitter 9. Emitter Marking is “2005”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Value on PCB (40 x 40 x 1.0 mm) Rev.4.00 Jun 21, 2006 page 1 of 12 Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 5 1.2 400 1.2Note 150 –55 to +150 Unit V V V mA W °C °C HSG2005 Electrical Characteristics (Ta = 25°C) Item DC current transfer ratio Symbol hFE Min 150 Typ 220 Max 300 Unit Cre 0.4 pF Transition Frequency fT 28.5 GHz VCE = 3 V, IC = 100 mA, f = 1 GHz Maximum Stable Gain MSG 10.5 12.5 dB VCE = 3 V, IC = 100 mA, f = 5.8 GHz Maximum Available Gain MAG 17.0 dB VCE = 3 V, IC = 100 mA, f = 2.4 GHz Maximum Available Gain MAG 9.0 dB VCE = 3 V, IC = 100 mA, f = 5.8 GHz PG 8.0 dB VCE = 3.6 V, Iidle = 100 mA, f = 5.8 GHz, Pin = +13 dBm P1dB +21 dBm VCE = 3.6 V, Iidle = 100 mA, f = 5.8 GHz Po(sat) +23 dBm VCE = 3.6 V, Iidle = 100 mA, f = 5.8 GHz, Pin = +13 dBm Reverse Transfer Capacitance Power Gain 1dB Compression Point at output Saturation Output Power Main Characteristics Collector Power Dissipation Pc* (mW) Collector Power Dissipation Curve 1800 *(4 x 4 x 1mm) on PCB 1200 600 0 50 100 Ambient Temperature Rev.4.00 Jun 21, 2006 page 2 of 12 150 Ta (°C) 200 Test Conditions VCE = 3 V, IC = 100 mA VCB = 3 V, IE = 0, f = 1 MHz, emitter grounded HSG2005 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics DC Current Transfer Ratio hFE (-) VCE = 3 V 80 60 40 20 0 0.2 0.4 0.6 0.8 Reverse Transfer Capacitanse Cre (pF) Base to Emitter Voltage 300 VCE = 3 V 200 100 1.0 VBE (V) 100 1000 IC (mA) Transition Frequency vs. Collector Current 1.0 40 IE = 0 f = 1 MHz 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 f = 1 GHz 20 1.8 GHz 15 2.4 GHz 10 5.2 GHz 5.8 GHz 5 1 10 Collector Current Rev.4.00 Jun 21, 2006 page 3 of 12 20 10 100 IC (mA) 1000 10 100 Collector Current 1000 IC (mA) S21 Parameter, Maximum Stable Gain, Maximum Available Gain vs. Frequency S21 Parameter |S21|2 (dB) Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) 25 30 VCB (V) 30 VCE = 3 V MAG MSG VCE = 3 V f = 1 GHz 0 1 5 Maximum Stable Gain, Maximum Available Gain vs. Collector Current 0 10 Collector Current Reverse Transfer Capacitanse vs. Collector to Base Voltage Collector to Base Voltage Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) 0 1 Transition Frequency fT (GHz) Collector Current IC (mA) 100 40 MSG 30 MAG 20 |S21|2 10 VCE = 3 V IC = 100 mA 0 0.1 1 Frequency f (GHz) 10 HSG2005 2.4 GHz Characteristics Evaluation Board Circuit VCC VBB : Bias Control *1 µF 1000 pF 1000 pF 10 pF 10 pF *1 µF 27 Ω L : 10 nH L : 5.6 nH C : 1 pF OUT C : 1 pF L : 1.8 nH IN C : 0.9 pF L : 1.5 nH C : 1 to 2 pF Pin - Pout Characteristics 3rd. Order Intermodulation Distortion (IMD3) Pin - Pout Characteristics Pout 20 PG 15 400 40 350 30 300 20 250 10 200 5 150 Iop 0 100 -5 50 -10 -20 0 -10 Pout / IMD3 (dBm) 25 VCC = 3.6 V Iidle = 50 mA f = 2.4 GHz Iop (mA) Output Power Pout (dBm) Power Gain PG (dB) 30 Fundamental (1tone) -10 -20 -50 -60 IMD3 (2tone: ∆f = 1MHz) -40 -20 Input Power Pin (dBm) S parameter vs. Frequency S parameter vs. Frequency 20 VCE = 3.6 V IC = 50 mA S21 10 S22 -20 S12 -30 -40 1.0 0 -10 40 VCE = 3.6 V IC = 150 mA S21 S11 0 -10 20 0 Input Power Pin (dBm) S parameter (dB) S parameter (dB) 0 -40 20 10 10 -30 0 20 10 VCE = 3.6 V Iidle = 50 mA f = 2.4 GHz S11 S22 -20 -30 S12 1.5 2.0 2.5 3.0 Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 4 of 12 3.5 4.0 -40 1.0 1.5 2.0 2.5 3.0 Frequency f (GHz) 3.5 4.0 HSG2005 5.8 GHz Characteristics Evaluation Board Circuit VCC VBB : Bias Control *1 µF 1000 pF 27 Ω *1 µF 1000 pF 10 pF 10 pF 2 pF 2 pF 0.5 pF OUT 0.2 pF IN 0.4 pF 0.5 pF Pin - Pout Characteristics Pin - Pout Characteristics 3rd. Order Intermodulation Distortion (IMD3) 40 250 Pout VCC = 3.6 V Iidle = 100 mA f = 5.8 GHz 200 Iop 15 150 10 100 PG 5 Pout / IMD3 (dBm) 20 VCE = 3.6 V Iidle = 100 mA f = 5.8 GHz 30 Iop (mA) Output Power Pout (dBm) Power Gain PG (dB) 25 20 10 Fundamental (1tone) 0 -10 -20 -30 50 IMD3 (2tone: ∆f = 1MHz) -40 0 0 5 10 15 0 20 -50 -60 -20 0 20 Input Power Pin (dBm) Input Power Pin (dBm) S parameter vs. Frequency S parameter vs. Frequency 10 40 10 VCE = 3.6 V IC = 100 mA S21 0 S11 S22 -10 VCE = 3.6 V IC = 150 mA S21 S parameter (dB) S parameter (dB) -40 -20 0 S11 -10 S22 -20 S12 S12 -30 -30 4 5 6 7 Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 5 of 12 8 4 5 6 7 Frequency f (GHz) 8 HSG2005 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 20 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -3 -.4 -30° -150° -2 -.6 -.8 -1 -90° Condition: VCE = 3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.04 / div. 90° S22 Parameter vs. Frequency .8 60° 120° -60° -120° -1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 0° 180° .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -5 -4 -.2 -30° -150° -3 -.4 -60° -120° -90° Condition: VCE = 3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Rev.4.00 Jun 21, 2006 page 6 of 12 -2 -.6 -.8 -1 -1.5 Condition: VCE = 3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) HSG2005 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 20 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -3 -.4 -30° -150° -2 -.6 -.8 -1 -90° Condition: VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.04 / div. 90° S22 Parameter vs. Frequency .8 60° 120° -60° -120° -1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 0° 180° .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -5 -4 -.2 -30° -150° -3 -.4 -60° -120° -90° Condition: VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Rev.4.00 Jun 21, 2006 page 7 of 12 -2 -.6 -.8 -1 -1.5 Condition: VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) HSG2005 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 20 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -3 -.4 -30° -150° -2 -.6 -.8 -1 -90° Condition: VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.04 / div. 90° S22 Parameter vs. Frequency .8 60° 120° -60° -120° -1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 0° 180° .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -5 -4 -.2 -30° -150° -3 -.4 -60° -120° -90° Condition: VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Rev.4.00 Jun 21, 2006 page 8 of 12 -2 -.6 -.8 -1 -1.5 Condition: VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) HSG2005 S parameter (VCE = 3 V, IC = 100 mA, Zo = 50 Ω) f (MHz) S11 ANG (deg.) -139.8 -160.8 -169.2 -174.5 -178.1 179.0 176.6 174.2 171.9 169.8 168.1 166.5 164.8 163.1 161.2 159.5 MAG 0.0084 0.0106 0.0107 0.0127 0.0129 0.0139 0.0155 0.0163 0.0176 0.0191 0.0201 0.0214 0.0230 0.0244 0.0257 0.0275 S12 ANG (deg.) 45.8 28.1 33.1 39.8 39.0 41.5 42.8 48.0 49.1 50.1 51.0 51.7 52.7 53.8 53.0 54.4 MAG 0.682 0.598 0.566 0.559 0.559 0.560 0.560 0.561 0.563 0.565 0.567 0.568 0.570 0.572 0.573 0.576 S22 ANG (deg.) -105.5 -134.6 -148.2 -155.7 -160.4 -163.5 -165.9 -167.7 -169.1 -170.4 -171.4 -172.3 -173.0 -173.8 -174.5 -175.1 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 MAG 0.687 0.775 0.786 0.792 0.797 0.802 0.803 0.804 0.802 0.804 0.807 0.809 0.809 0.809 0.809 0.811 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 0.814 0.817 0.817 0.816 0.814 0.817 0.820 0.824 0.825 0.823 0.822 0.822 0.824 0.827 0.828 0.824 0.826 0.827 0.826 0.830 0.830 0.832 0.839 0.841 0.843 0.851 0.854 0.856 158.1 156.9 155.6 154.0 152.3 150.8 149.5 148.4 147.3 145.8 144.3 142.8 141.5 140.4 137.9 134.8 132.4 129.6 126.2 123.6 120.8 117.3 114.6 111.9 108.6 106.1 103.6 100.5 5.62 5.29 5.00 4.74 4.49 4.28 4.08 3.90 3.73 3.58 3.44 3.30 3.18 3.07 2.87 2.68 2.53 2.39 2.25 2.13 2.03 1.92 1.82 1.74 1.65 1.56 1.49 1.41 65.37 63.93 62.42 60.74 59.29 57.89 56.76 55.44 54.01 52.41 50.91 49.54 48.34 47.15 44.27 41.22 38.75 35.90 32.65 29.93 27.16 23.82 20.87 18.04 14.81 11.85 8.83 5.79 0.0280 0.0295 0.0314 0.0324 0.0335 0.0350 0.0364 0.0381 0.0389 0.0405 0.0416 0.0432 0.0440 0.0458 0.0481 0.0509 0.0539 0.0562 0.0587 0.0608 0.0632 0.0656 0.0675 0.0699 0.0719 0.0734 0.0750 0.0763 54.6 54.2 54.2 54.5 54.4 53.9 53.1 53.8 53.4 52.5 52.6 52.5 51.5 51.0 50.3 49.1 48.0 46.1 44.6 43.6 41.6 40.2 38.3 36.1 34.1 32.2 29.8 27.5 0.578 0.579 0.581 0.583 0.584 0.586 0.587 0.590 0.591 0.591 0.593 0.594 0.595 0.596 0.596 0.596 0.597 0.597 0.597 0.596 0.596 0.597 0.599 0.601 0.606 0.612 0.618 0.624 -175.6 -176.0 -176.4 -176.9 -177.3 -177.7 -178.0 -178.4 -178.7 -179.0 -179.4 -179.8 179.9 179.5 178.8 178.0 177.0 175.8 174.5 173.0 171.3 169.4 167.4 165.3 163.1 160.9 158.5 156.3 6000 0.862 98.4 1.34 2.79 0.0776 25.4 0.631 153.9 Rev.4.00 Jun 21, 2006 page 9 of 12 MAG 77.53 47.14 32.99 24.95 19.96 16.62 14.22 12.41 10.98 9.81 8.89 8.11 7.47 6.91 6.43 6.00 S21 ANG (deg.) 120.52 104.05 96.02 91.32 87.93 85.12 82.63 80.38 78.31 76.55 74.86 73.18 71.47 69.76 68.18 66.70 HSG2005 S parameter (VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω) f (MHz) S11 ANG (deg.) -140.9 -160.6 -168.9 -174.3 -178.0 179.2 176.7 174.3 172.0 170.0 168.2 166.6 164.9 163.1 161.3 159.6 MAG 0.0127 0.0091 0.0110 0.0128 0.0135 0.0140 0.0157 0.0169 0.0177 0.0191 0.0204 0.0211 0.0228 0.0247 0.0252 0.0268 S12 ANG (deg.) 40.9 37.0 34.4 37.4 41.0 42.0 44.5 47.1 49.5 52.1 50.3 51.6 52.5 53.4 53.4 53.9 MAG 0.626 0.594 0.561 0.554 0.553 0.553 0.554 0.555 0.557 0.559 0.561 0.563 0.564 0.566 0.567 0.570 S22 ANG (deg.) -109.1 -134.0 -147.6 -155.1 -159.7 -163.0 -165.4 -167.2 -168.8 -170.0 -171.0 -171.9 -172.7 -173.4 -174.0 -174.7 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 MAG 0.675 0.771 0.785 0.790 0.794 0.800 0.802 0.802 0.801 0.802 0.805 0.808 0.808 0.808 0.807 0.809 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 0.813 0.816 0.816 0.814 0.813 0.816 0.819 0.823 0.824 0.822 0.820 0.821 0.823 0.826 0.827 0.823 0.826 0.826 0.826 0.830 0.829 0.831 0.838 0.841 0.842 0.850 0.855 0.856 158.3 157.0 155.7 154.1 152.4 150.9 149.6 148.5 147.3 145.9 144.3 142.9 141.6 140.5 137.9 134.9 132.4 129.6 126.3 123.7 120.8 117.3 114.7 112.0 108.7 106.1 103.6 100.5 5.68 5.35 5.05 4.79 4.55 4.33 4.12 3.94 3.77 3.62 3.47 3.34 3.22 3.11 2.90 2.71 2.55 2.41 2.28 2.16 2.05 1.94 1.84 1.76 1.66 1.58 1.51 1.43 65.30 63.86 62.34 60.66 59.20 57.79 56.67 55.32 53.88 52.28 50.76 49.39 48.20 47.01 44.10 41.04 38.57 35.71 32.44 29.71 26.93 23.60 20.64 17.79 14.56 11.59 8.56 5.51 0.0281 0.0294 0.0309 0.0323 0.0335 0.0348 0.0362 0.0378 0.0391 0.0409 0.0422 0.0423 0.0444 0.0457 0.0480 0.0512 0.0533 0.0558 0.0588 0.0609 0.0629 0.0648 0.0674 0.0696 0.0719 0.0731 0.0746 0.0762 53.8 54.0 53.8 54.4 54.6 54.0 53.4 53.2 52.9 53.1 52.6 52.1 51.8 51.4 50.6 49.0 47.8 46.9 45.3 43.6 41.7 40.0 38.3 36.7 34.5 32.2 29.9 27.7 0.572 0.574 0.575 0.578 0.579 0.581 0.582 0.584 0.586 0.586 0.588 0.589 0.590 0.591 0.592 0.592 0.593 0.592 0.593 0.592 0.592 0.593 0.595 0.598 0.603 0.608 0.615 0.621 -175.2 -175.7 -176.1 -176.5 -176.9 -177.3 -177.7 -178.0 -178.3 -178.6 -179.0 -179.4 -179.7 180.0 179.3 178.4 177.4 176.3 175.0 173.4 171.8 169.8 167.8 165.8 163.5 161.3 159.0 156.7 6000 0.862 98.4 1.35 2.51 0.0770 25.6 0.629 154.3 Rev.4.00 Jun 21, 2006 page 10 of 12 MAG 80.79 48.16 33.50 25.29 20.21 16.83 14.40 12.56 11.11 9.93 8.99 8.20 7.56 6.99 6.51 6.07 S21 ANG (deg.) 120.97 104.58 96.32 91.50 88.06 85.22 82.70 80.43 78.33 76.55 74.86 73.16 71.44 69.73 68.13 66.63 HSG2005 S parameter (VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω) f (MHz) S11 ANG (deg.) -141.0 -160.3 -168.8 -174.2 -177.9 179.3 176.8 174.4 172.1 170.0 168.3 166.7 165.0 163.2 161.3 159.7 MAG 0.0107 0.0118 0.0104 0.0110 0.0131 0.0145 0.0157 0.0165 0.0172 0.0190 0.0203 0.0216 0.0228 0.0242 0.0255 0.0268 S12 ANG (deg.) 60.0 37.6 31.8 37.4 38.2 43.2 44.8 46.4 47.4 49.6 48.8 52.1 53.0 53.8 53.7 54.4 MAG 0.695 0.583 0.556 0.550 0.548 0.548 0.549 0.550 0.552 0.553 0.556 0.558 0.560 0.561 0.563 0.565 S22 ANG (deg.) -107.8 -133.1 -146.8 -154.7 -159.3 -162.5 -165.0 -166.9 -168.4 -169.7 -170.7 -171.6 -172.3 -173.1 -173.7 -174.3 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 MAG 0.669 0.763 0.781 0.787 0.793 0.799 0.800 0.801 0.800 0.801 0.804 0.807 0.807 0.806 0.806 0.809 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 0.812 0.814 0.815 0.813 0.812 0.814 0.818 0.822 0.822 0.821 0.820 0.819 0.822 0.825 0.826 0.823 0.825 0.825 0.825 0.829 0.828 0.830 0.838 0.840 0.842 0.850 0.854 0.856 158.3 157.1 155.7 154.1 152.5 150.9 149.7 148.5 147.3 145.9 144.4 142.9 141.6 140.5 137.9 134.9 132.5 129.7 126.3 123.7 120.9 117.4 114.7 112.0 108.7 106.1 103.6 100.5 5.73 5.39 5.10 4.83 4.58 4.36 4.16 3.98 3.81 3.65 3.50 3.37 3.24 3.13 2.92 2.73 2.57 2.43 2.29 2.17 2.06 1.95 1.85 1.77 1.68 1.59 1.52 1.44 65.26 63.81 62.28 60.60 59.13 57.72 56.58 55.23 53.78 52.18 50.66 49.28 48.08 46.89 43.98 40.91 38.42 35.54 32.27 29.53 26.75 23.41 20.45 17.60 14.35 11.39 8.34 5.27 0.0282 0.0297 0.0311 0.0324 0.0335 0.0348 0.0365 0.0381 0.0389 0.0402 0.0416 0.0429 0.0443 0.0453 0.0482 0.0505 0.0533 0.0559 0.0582 0.0603 0.0627 0.0653 0.0671 0.0694 0.0712 0.0730 0.0749 0.0761 54.9 54.0 54.1 54.4 54.2 54.2 53.4 53.5 53.4 53.0 53.2 51.7 51.9 51.2 50.0 49.5 48.0 46.2 45.6 43.9 41.8 40.4 38.2 36.3 34.3 32.3 29.6 28.1 0.567 0.569 0.571 0.573 0.575 0.577 0.578 0.580 0.581 0.583 0.584 0.585 0.586 0.587 0.588 0.589 0.589 0.589 0.589 0.589 0.589 0.590 0.592 0.595 0.599 0.606 0.612 0.619 -174.9 -175.3 -175.7 -176.1 -176.6 -177.0 -177.3 -177.6 -178.0 -178.3 -178.7 -179.0 -179.3 -179.7 179.6 178.7 177.8 176.6 175.3 173.8 172.1 170.2 168.2 166.1 163.9 161.6 159.3 157.0 6000 0.861 98.4 1.36 2.29 0.0768 25.7 0.626 154.7 Rev.4.00 Jun 21, 2006 page 11 of 12 MAG 82.98 48.82 33.85 25.53 20.40 16.98 14.52 12.67 11.21 10.02 9.07 8.27 7.62 7.06 6.56 6.12 S21 ANG (deg.) 121.53 105.15 96.65 91.73 88.22 85.36 82.79 80.50 78.40 76.59 74.88 73.18 71.44 69.72 68.12 66.61 HSG2005 Package Dimensions Package Name HWQFN-8 JEITA Package Code P-HWQFN8-2x2-0.65 RENESAS Code PWQN0008ZA-A D B MASS[Typ.] 0.009g b A 6 5 5 x M S 6 B A 7 Lp 7 Previous Code TNP-8TV 4 4 8 C0.15 ZE 0.05 E 8 0.60 0.90 1 2 3 3 ZD S y A1 A y1 S S 2 1 e Reference Symbol D E A A1 A2 b e Lp x y y1 ZD ZE Dimension in Millimeters Min 1.965 1.965 Nom 2.00 2.00 0 Max 2.075 2.075 0.80 0.05 0.3 0.65 0.35 0.10 0.08 0.10 0.350 0.225 Ordering Information Part Name HSG2005TB-E Quantity 2000 pcs. Shipping Container φ178 mm Reel, 8 mm Emboss taping Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.4.00 Jun 21, 2006 page 12 of 12 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. 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