2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0759-0100 (Previous ADE-208-1469) Rev.1.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “WY–“. *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.1.00 Aug 10, 2005 page 1 of 8 Symbol VCBO VCEO VEBO IC PC Ratings 15 6.0 1.5 80 80 Unit V V V mA mW Tj Tstg 150 –55 to 150 °C °C 2SC5849 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre Min 15 90 Typ 110 0.5 Max 0.1 0.1 0.1 140 Unit V µA µA µA Collector output capacitance Gain bandwidth product Gain bandwidth product Power gain Cob fT(1) fT(2) PG 1.0 10 0.85 4.0 9.0 13 1.15 pF GHz GHz dB Noise figure NF 1.1 1.8 dB Rev.1.00 Aug 10, 2005 page 2 of 8 pF Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 6.0 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 1 V, Emitter ground, f = 1 MHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 30 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz 2SC5849 Main Characteristics Typical Output Characteristics 20 100 Collector Current IC (mA) Collector Power Dissipation PC (mW) Collector Power Dissipation Curve 80 60 40 20 0 50 100 150 200 250 80 µA 8 60 µA 40 µA 4 IB = 20 µA 1 2 3 4 5 6 Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current hFE 200 20 15 10 5 0.2 0.4 0.6 0.8 VCE = 1 V 100 0 0.1 1.0 2.0 IE = 0 f = 1 MHz 1.6 1.2 0.8 0.4 0.5 1.0 1.5 2.0 Collector to Base Voltage Rev.1.00 Aug 10, 2005 page 3 of 8 2.5 3.0 VCB (V) Reverse Transfer Capacitance Cre (pF) Collector Output Capacitance vs. Collector to Base Voltage 1.0 10 Collector Current Base to Emitter Voltage VBE (V) Collector Output Capacitance Cob (pF) 100 µA 12 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio IC (mA) Collector Current 120 µA Ambient Temperature Ta (°C) VCE = 1 V 0 140 µA 16 0 25 0 160 µA 180 µA 100 IC (mA) Reverse Transfer Capacitance vs. Collector to Base Voltage 1.0 Emitter ground f = 1 MHz 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector to Base Voltage VCB (V) 2SC5849 S21 Parameter vs. Collector Current 20 20 |S21|2 (dB) VCE = 1 V f = 1 GHz 16 12 S21 Parameter Gain Bandwidth Product fT (GHz) Gain Bandwidth Product vs. Collector Current 8 4 0 1 2 5 10 20 50 12 8 4 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Power Gain vs. Collector Current Noise Figure vs. Collector Current 5 NF (dB) VCE = 1 V f = 900 MHz 16 12 Noise Figure PG (dB) Power Gain 16 0 1 100 20 8 4 0 1 VCE = 1 V f = 1 GHz VCE = 1 V f = 900 MHz 4 3 2 1 0 2 5 10 20 50 Collector Current IC (mA) Rev.1.00 Aug 10, 2005 page 4 of 8 100 1 2 5 10 20 50 Collector Current IC (mA) 100 2SC5849 S11 Parameter vs. Frequency S21 Parameter vs. Frequency 1 90° .8 1.5 .6 Scale: 8 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 3 45 1.5 2 180° 0° –10 –5 –4 –3 –.2 –30° –150° –.4 –2 –.6 –.8 –120° –1.5 –60° –1 –90° Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 120° 1 1.5 .6 60° 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 –10 –5 –4 –3 –.2 –30° –150° –.4 –2 –120° –60° –90° Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) Rev.1.00 Aug 10, 2005 page 5 of 8 –.6 –.8 –1.5 –1 Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) 2SC5849 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.807 –40.6 14.95 154.2 0.030 69.3 0.913 –19.1 200 0.737 –73.7 12.30 135.0 0.049 55.5 0.768 –31.8 300 0.675 –98.4 9.86 121.2 0.061 47.8 0.633 –38.8 400 0.642 –115.9 8.03 111.9 0.067 44.0 0.544 –42.3 500 0.624 –127.9 6.72 105.0 0.071 42.8 0.484 –44.4 600 0.611 –138.1 5.75 99.4 0.074 43.2 0.442 –45.2 700 0.604 –145.4 5.02 95.0 0.078 43.8 0.412 –46.0 800 0.599 –151.6 4.45 90.9 0.081 45.4 0.390 –46.7 900 0.595 –157.2 3.98 87.6 0.084 47.2 0.373 –47.6 1000 0.594 –161.2 3.62 84.5 0.087 49.3 0.362 –48.4 1100 0.591 –165.5 3.33 81.8 0.091 51.3 0.354 –49.5 1200 0.592 –168.4 3.06 79.0 0.095 53.6 0.347 –50.7 1300 0.591 –171.5 2.86 76.4 0.099 55.3 0.341 –52.0 1400 0.592 –174.8 2.66 74.1 0.103 57.2 0.340 –53.5 1500 0.592 –176.8 2.51 72.0 0.108 59.1 0.335 –54.8 1600 0.589 –180.0 2.35 69.7 0.113 61.1 0.337 –56.3 1700 0.594 177.7 2.23 67.8 0.119 62.8 0.334 –58.3 1800 0.594 175.7 2.13 65.7 0.126 64.7 0.335 –60.0 1900 0.596 173.9 2.03 63.7 0.132 65.7 0.335 –62.0 2000 0.598 171.3 1.94 61.9 0.139 66.9 0.335 –64.0 Rev.1.00 Aug 10, 2005 page 6 of 8 2SC5849 (VCE = 1 V, IC = 20 mA, ZO = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.504 –90.3 33.79 132.5 0.021 61.4 0.674 –44.5 200 0.490 –128.6 21.25 112.9 0.030 57.6 0.431 –61.0 300 0.488 –146.2 14.78 103.3 0.037 60.2 0.309 –67.9 400 0.487 –156.3 11.31 97.4 0.045 63.7 0.247 –71.1 500 0.492 –162.8 9.13 93.3 0.053 66.0 0.210 –73.2 600 0.492 –167.0 7.65 90.0 0.062 68.0 0.187 –75.1 700 0.497 –170.8 6.58 87.2 0.070 69.6 0.171 –76.7 800 0.492 –174.1 5.78 84.4 0.079 70.4 0.160 –78.2 900 0.496 –177.0 5.13 82.6 0.088 71.2 0.152 –79.9 1000 0.498 –178.4 4.65 80.2 0.097 71.7 0.147 –81.4 1100 0.500 178.2 4.24 78.3 0.106 72.0 0.145 –83.2 1200 0.503 177.5 3.90 76.1 0.116 72.4 0.143 –85.1 1300 0.503 175.2 3.63 74.3 0.123 72.1 0.143 –87.2 1400 0.506 173.7 3.38 72.6 0.132 72.4 0.144 –88.8 1500 0.503 172.0 3.17 70.9 0.141 72.3 0.144 –91.2 1600 0.507 170.6 2.99 69.4 0.150 72.1 0.146 –92.8 1700 0.516 168.9 2.82 67.7 0.159 72.0 0.148 –95.0 1800 0.511 167.3 2.68 66.0 0.169 71.7 0.151 –97.0 1900 0.515 165.6 2.56 64.6 0.177 71.4 0.154 –99.0 2000 0.514 165.1 2.45 63.0 0.187 70.8 0.158 –100.8 Rev.1.00 Aug 10, 2005 page 7 of 8 2SC5849 Package Dimensions JEITA Package Code RENESAS Code SC-89 Modified Package Name PUSF0003ZA-A D MASS[Typ.] MFPAK / MFPAKV 0.0016g A e c LP E HE L A A b x M S e A Reference Symbol A2 A e1 A1 b b1 S I1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x b2 e1 I1 Dimension in Millimeters Min 0.55 0 0.55 0.15 0.1 1.35 0.7 1.15 0.1 0.15 Nom 0.22 0.2 0.13 0.11 1.4 0.8 0.45 1.2 0.2 Max 0.6 0.01 0.59 0.3 0.15 1.45 0.9 1.25 0.3 0.45 0.05 0.35 0.75 0.5 Ordering Information Part Name 2SC5849WY-TR-E Quantity 9000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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