Cree CPM2-1200-0160B Silicon Carbide Power MOSFET

VDS
1200 V
ID @ 25˚C 19 A
CPM2-1200-0160B
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
RDS(on)
160 mΩ
N-Channel Enhancement Mode
Features
Chip Outline
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New C2M SiC MOSFET technlogy
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
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Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Benefits
Applications
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Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC Converters
LED Lighting Power Supplies
Part Number
Die Size (mm)
CPM2-1200-0160B
2.39 × 2.63
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VDSmax
Drain - Source Voltage
1200
V
VGS = 0 V, ID = 100 μA
VGSmax
Gate - Source Voltage
-10/+25
V
Absolute maximum values
VGSop
Gate - Source Voltage
-5/+20
V
Recommended operational values
ID
Continuous Drain Current
ID(pulse)
Pulsed Drain Current
TJ , Tstg
Operating Junction and Storage Temperature
TL
TProc
19
12.5
A
VGS = 20 V, TC = 25˚C
VGS = 20 V, TC = 100˚C
40
A
-55 to
+150
˚C
Solder Temperature
260
˚C
1.6mm (0.063”) from case for 10s
Maximum Processing Temperature
325
˚C
10 min. maximum
Note (1): Assumes a RθJC < 0.90 K/W
1
Value
CPM2-1200-0160B Rev. A
Pulse width tP limited by Tjmax
Note
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
Min.
Typ.
1200
V
2.5
V
VDS = 10V, IDS = 2.5 mA
1.9
V
VDS = 10V, IDS = 2.5 mA, TJ = 150ºC
100
μA
VDS = 1200 V, VGS = 0 V
250
nA
VGS = 20 V, VDS = 0 V
1
160
Drain-Source On-State Resistance
4.8
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Eoss
Coss Stored Energy
EAS
Avalanche Energy, Single Pluse
EON
Turn-On Switching Energy
79
EOFF
Turn Off Switching Energy
57
td(on)
Turn-On Delay Time
RG(int)
mΩ
290
Ciss
tf
196
VGS = 20 V, ID = 10 A
VGS = 20 V, ID = 10A, TJ = 150ºC
VDS= 20 V, IDS= 10 A
S
4.3
VDS= 20 V, IDS= 10 A, TJ = 150ºC
525
VGS = 0 V
47
Note
VGS = 0 V, ID = 100 μA
2.4
Transconductance
td(off)
Test Conditions
1.8
gfs
tr
Max. Unit
pF
4
VDS = 1000 V
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
f = 1 MHz
25
μJ
VAC = 25 mV
600
mJ
ID = 10A, VDD = 50V
μJ
VDS = 800 V, VGS = -5/20 V, ID = 10A,
RG(ext) = 2.5Ω, L= 256 μH
ns
VDD = 800 V, VGS = -5/20 V
ID = 10 A
RG(ext) = 2.5 Ω, RL = 80 Ω
Timing relative to VDS
Per IEC60747-8-4 pg 83
Ω
f = 1 MHz, VAC = 25 mV
nC
VDS = 800 V, VGS = -5/20 V
ID = 10 A
Per IEC60747-8-4 pg 21
9
Rise Time
11
Turn-Off Delay Time
16
Fall Time
10
Internal Gate Resistance
6.5
Qgs
Gate to Source Charge
7
Qgd
Gate to Drain Charge
14
Qg
Total Gate Charge
34
Fig. 16
Fig. 12
Reverse Diode Characteristics
Symbol
VSD
Parameter
Diode Forward Voltage
IS
Continuous Diode Forward Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Peak Reverse Recovery Current
Typ.
Max.
Unit
3.3
V
3.1
19
A
23
ns
105
nC
9
A
Test Conditions
VGS
= -5 V, IF=5 A
Note
VGS = -5V, IF=5 A, TJ = 150 ºC
Fig. 8,9,
10
TC = 25˚C
Note 2
VGS = - 5 V, ISD = 10 A, VR = 800 V
dif/dt = 3200 A/µs
Note 2
Note (2): When using SiC Body Diode the maximum recommended VGS = -5V
Note
(3): For Characteristics
inductive and resistive switching data and waveforms please refer to datasheet for packaged device.
Thermal
Part number C2M0160120D.
Symbol
2
Parameter
RθJC
Thermal Resistance from Junction to Case
RθJA
Thermal Resistance From Junction to Ambient
CPM2-1200-0160B Rev. A
Typ.
Max.
0.9
1.0
40
Unit
K/W
Test Conditions
Note
Fig. 21
Typical Performance
40
35
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 20 V
35
VGS = 18 V
30
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
40
Conditions:
TJ = -55 °C
tp < 200 µs
VGS = 16 V
25
VGS = 14 V
20
15
VGS = 12 V
10
VGS = 10 V
5
VGS = 20 V
VGS = 18 V
30
VGS = 16 V
25
VGS = 14 V
20
VGS = 12 V
15
VGS = 10 V
10
5
0
0
0.0
2.5
5.0
7.5
10.0
12.5
0.0
2.5
5.0
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
40
VGS = 16 V
25
VGS = 14 V
20
12.5
VGS = 12 V
VGS = 10 V
15
Conditions:
IDS = 10 A
VGS = 20 V
tp < 200 µs
2.0
VGS = 18 V
On Resistance, RDS On (P.U.)
Drain-Source Current, IDS (A)
VGS = 20 V
30
10.0
Figure 2. Output Characteristics TJ = 25 ºC
2.5
Conditions:
TJ = 150 °C
tp < 200 µs
35
7.5
Drain-Source Voltage, VDS (V)
10
1.5
1.0
0.5
5
0
0.0
2.5
5.0
7.5
10.0
0.0
12.5
-50
-25
0
TJ = 150 °C
320
240
TJ = 25 °C
160
TJ = -55 °C
80
0
100
125
150
280
240
VGS = 14 V
200
VGS = 16 V
160
VGS = 18 V
VGS = 20 V
120
80
40
0
0
5
10
15
20
25
30
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
75
Conditions:
IDS = 10 A
tp < 200 µs
320
On Resistance, RDS On (mOhms)
On Resistance, RDS On (mOhms)
360
Conditions:
VGS = 20 V
tp < 200 µs
400
50
Figure 4. Normalized On-Resistance vs. Temperature
Figure 3. Output Characteristics TJ = 150 ºC
480
25
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
CPM2-1200-0160B Rev. A
35
-50
-25
0
25
50
75
100
125
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
150
Typical Performance
Drain-Source Current, IDS (A)
20
-5
Conditions:
VDS = 20 V
tp < 200 µs
-4
-3
-2
-1
0
Condition:
TJ = -55 °C
tp < 200 µs
VGS = -5 V
TJ = 150 °C
0
15
-5
Drain-Source Current, IDS (A)
VGS = 0 V
TJ = 25 °C
10
TJ = -55 °C
5
-10
VGS = -2 V
-15
-20
-25
-30
0
0
2
4
6
8
10
12
14
-35
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (A)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-4
-3
-2
-1
Condition:
TJ = 25 °C
tp < 200 µs
VGS = -5 V
VGS = 0 V
Drain-Source Current, IDS (A)
0
-5
-4
-3
-2
-1
0
-5
-10
VGS = -2 V
-15
-20
-25
0
Condition:
TJ = 150 °C
tp < 200 µs
VGS = 0 V
-15
-20
-25
-30
-35
-35
Drain-Source Voltage, VDS (A)
Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC
3.5
3.0
25
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
4
CPM2-1200-0160B Rev. A
Conditions:
IDS = 10 A
IGS = 100 mA
VDS = 800 V
TJ = 25 °C
20
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
Figure 10. Body Diode Characteristic at 150 ºC
Conditons
VDS = 10 V
IDS = 2.5 mA
-25
-5
-10
-30
-50
0
VGS = -2 V
VGS = -5 V
Drain-Source Current, IDS (A)
-5
Figure 8. Body Diode Characteristic at -55 ºC
150
15
10
5
0
-5
0
5
10
15
20
25
30
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
35
40
Typical Performance
-5
-4
-3
-2
-1
0
-5
-4
-3
-2
-1
0
0
Conditions:
TJ = -55 °C
tp < 200 µs
0
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 0 V
Drain-Source Current, IDS (A)
-10
VGS = 10 V
-15
VGS = 15 V
-20
VGS = 20 V
-25
-5
VGS = 5 V
Drain-Source Current, IDS (A)
-5
VGS = 5 V
VGS = 0 V
-10
VGS = 10 V
-15
VGS = 15 V
-20
VGS = 20 V
-25
-30
-35
Drain-Source Voltage, VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-5
-4
-3
-30
-2
-1
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
30
0
Drain-Source Current, IDS (A)
VGS = 0 V
VGS = 5 V
25
-5
VGS = 10 V
-10
VGS = 15 V
-15
VGS = 20 V
-20
-25
Stored Energy, EOSS (µJ)
Conditions:
TJ = 150 °C
tp < 200 µs
-35
Drain-Source Voltage, VDS (V)
20
15
10
5
-30
0
Drain-Source Voltage, VDS (V)
0
-35
Capacitance (pF)
Capacitance (pF)
1000
Coss
100
10
800
1000
1200
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
100
Coss
10
Crss
Crss
1
1
0
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
5
600
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
400
Drain to Source Voltage, VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
1000
200
CPM2-1200-0160B Rev. A
200
0
200
400
600
Drain-Source Voltage, VDS (V)
800
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
1000
Mechanical Parameters
Parameter
Typical Value
Unit
2.39 × 2.63
mm
Exposed Source Pad Metal Dimensions (LxW) Each
0.757 × 1.45
mm
Gate Pad Dimensions (L x W)
0.80 × 0.505
mm
180 ± 40
µm
Top Side Source metallization (Al)
4
µm
Top Side Gate metallization (Al)
4
µm
0.8 / 0.6
µm
Die Dimensions (L x W)
Die Thickness
Bottom Drain metallization (Ni/Ag)
Chip Dimensions
2.39 mm
Gate Pad
0.80 mm
0.358 mm
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CPM2-1200-0160B Rev. A
0.757 mm
0.16 mm
2.63 mm
1.45 mm
0.505
mm
0.855 mm
0.265
mm
0.585 mm
0.757 mm
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems.
Related Links
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C2M PSPICE Models: www.cree.com/power
SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power
Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.
7
CPM2-1200-0160B
C2M0160120D
Rev.Rev.
B A
Cree, Inc.
4600 Silicon
Cree,Drive
Inc.
Durham,
4600 Silicon
NC 27703
Drive
USA Tel:Durham,
+1.919.313.5300
NC 27703
USAFax:
Tel: +1.919.313.5300
+1.919.313.5451
Fax:
www.cree.com/power
+1.919.313.5451
www.cree.com/power