CPM3-0090-0065B

CPM3-0900-0065B
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
VDS
900 V
ID @ 25˚C 36 A
65 mΩ
RDS(on)
N-Channel Enhancement Mode
Features
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Chip Outline
New C3M SiC MOSFET technlogy
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Benefits
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Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
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Solar Inverters
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies Part Number
Die Size (mm)
CPM3-0900-0065B
2.25 x 2.95
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VDSmax
Drain - Source Voltage
900
V
VGS = 0 V, ID = 100 μA
VGSmax
Gate - Source Voltage
-8/+18
V
Absolute maximum values
VGSop
Gate - Source Voltage
-4/+15
V
Recommended operational values
ID
Continuous Drain Current
23
A
VGS =15 V, TC = 25˚C
VGS =15 V, TC = 100˚C
A
-55 to
+150
˚C
Solder Temperature
260
˚C
1.6mm (0.063”) from case for 10s
Maximum Processing Temperature
325
˚C
10 min. maximum
Pulsed Drain Current
TJ , Tstg
Operating Junction and Storage Temperature
TProc
36
90
ID(pulse)
TL
Note (1): Assumes a RθJC < 1.0 K/W
1
Value
CPM3-0900-0065B Rev. -
Pulse width tP limited by Tjmax
Note
Note 1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Min.
Typ.
Max.
900
1.8
Unit
Test Conditions
V
VGS = 0 V, ID = 100 μA
2.1
V
VDS = 10V, ID = 5 mA
1.6
V
VDS = 10V, ID = 5 mA, TJ = 150ºC
IDSS
Zero Gate Voltage Drain Current
1
100
μA
VDS = 900 V, VGS = 0 V
IGSS
Gate-Source Leakage Current
10
250
nA
VGS = 15 V, VDS = 0 V
65
78
RDS(on)
Drain-Source On-State Resistance
90
13.6
gfs
Transconductance
Ciss
Input Capacitance
660
Coss
Output Capacitance
60
Crss
Reverse Transfer Capacitance
4.0
Eoss
Coss Stored Energy
16
EON
Turn-On Switching Energy
225
EOFF
Turn Off Switching Energy
91
td(on)
Turn-On Delay Time
21
Rise Time
36
Turn-Off Delay Time
28
Fall Time
25
tr
td(off)
tf
RG(int)
S
11.6
Internal Gate Resistance
4.7
Qgs
Gate to Source Charge
7.5
Qgd
Gate to Drain Charge
12
Qg
Total Gate Charge
mΩ
pF
VGS = 15 V, ID = 20 A
VGS = 15 V, ID = 20A, TJ = 150ºC
VDS= 15 V, IDS= 20 A
VDS= 15 V, IDS= 20 A, TJ = 150ºC
VGS = 0 V, VDS = 600 V
f = 1 MHz
μJ
VAC = 25 mV
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
Fig. 16
μJ
VDS = 400 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 2.5Ω, L= 77 μH, TJ = 150ºC
Note: 3
ns
VDD = 400 V, VGS = -4 V/15 V
ID = 20 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Per IEC60747-8-4 pg 83
Resistive load
Note: 3
Ω
f = 1 MHz, VAC = 25 mV
nC
VDS = 400 V, VGS = -4 V/15 V
ID = 20 A
Per IEC60747-8-4 pg 21
30.4
Fig. 12
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)rse Diode Characteristics (TC = 25˚C unless otherwise
specified)
Symbol
VSD
IS
IS, pulse
Parameter
Diode Forward Voltage
Typ.
Max.
Unit
Test Conditions
4.8
V
VGS = -4 V, ISD = 10 A
4.4
V
VGS = -4 V, ISD = 10 A, TJ = 150 °C
Fig. 8,
9, 10
Continuous Diode Forward Current
21
A
VGS = -4 V
Note 2
Diode pulse Current
90
A
VGS = -4 V, pulse width tP limited by Tjmax
Note 2
VGS = -4 V, ISD = 20 A, VR = 400 V
dif/dt = 600 A/µs
Note 2
trr
Reverse Recover time
30
ns
Qrr
Reverse Recovery Charge
134
nC
Irrm
Peak Reverse Recovery Current
7.5
A
Note (2): When using SiC Body Diode the maximum recommended VGS = -4V
Note (3): All Switching measurements taken on a TO-247-3 package. Final values may vary depending on final package.
2
Note
CPM3-0900-0065B Rev. -
Typical Performance
70
Drain-Source Current, IDS (A)
80
Conditions:
TJ = -55 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 15 V
70
VGS = 13 V
60
Drain-Source Current, IDS (A)
80
VGS = 11 V
50
40
VGS = 9 V
30
20
10
VGS = 15 V
VGS = 13 V
VGS = 11 V
60
50
VGS = 9 V
40
30
20
VGS = 7 V
10
VGS = 7 V
0
0
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0.0
2.5
5.0
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
80
Conditions:
TJ = 150 °C
tp < 200 µs
2.0
VGS = 15 V
VGS = 11 V
1.6
60
VGS = 9 V
50
40
30
VGS = 7 V
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.0
0.0
2.5
5.0
7.5
10.0
12.5
-50
15.0
-25
0
Figure 3. Output Characteristics TJ = 150 ºC
Conditions:
VGS = 15 V
tp < 200 µs
TJ = 150 °C
80
TJ = -55 °C
60
75
100
125
150
Conditions:
IDS = 20 A
tp < 200 µs
120
On Resistance, RDS On (mOhms)
100
50
Figure 4. Normalized On-Resistance vs. Temperature
140
120
25
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
On Resistance, RDS On (Ohms)
15.0
0.2
0
TJ = 25 °C
40
20
100
VGS = 11 V
80
VGS = 13 V
60
VGS = 15 V
40
20
0
0
0
10
20
30
40
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
12.5
Conditions:
IDS = 20 A
VGS = 15 V
tp < 200 µs
1.8
VGS = 13 V
10.0
Figure 2. Output Characteristics TJ = 25 ºC
On Resistance, RDS On (P.U.)
Drain-Source Current, IDS (A)
70
7.5
Drain-Source Voltage, VDS (V)
CPM3-0900-0065B Rev. -
50
60
-50
-25
0
25
50
75
100
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
125
150
Typical Performance
-10
Conditions:
VDS = 20 V
tp < 200 µs
-8
-6
-4
-2
0
0
40
TJ = 150 °C
VGS = -4 V
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
50
30
TJ = 25 °C
20
TJ = -55 °C
10
VGS = 0 V
-20
VGS = -2 V
-40
-60
Conditions:
TJ = -55°C
tp < 200 µs
0
0
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-10
-8
-6
-4
-80
Drain-Source Voltage VDS (V)
Figure 8. Body Diode Characteristic at -55 ºC
-2
0
-10
-8
-6
-4
-2
0
Drain-Source Current, IDS (A)
VGS = -4 V
-20
VGS = 0 V
VGS = -2 V
-40
0
Drain-Source Current, IDS (A)
0
VGS = -4 V
-20
VGS = 0 V
VGS = -2 V
-40
-60
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
-60
Conditions:
TJ = 150°C
tp < 200 µs
-80
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.0
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
4
Conditions:
IDS = 20 A
IGS = 100 mA
VDS = 400 V
TJ = 25 °C
12
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
16
Conditons
VDS = 10 V
IDS = 5 mA
2.5
CPM3-0900-0065B Rev. -
-80
150
8
4
0
-4
0
5
10
15
20
25
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
30
35
Typical Performance
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
VGS = 0 V
VGS = 5 V
-20
VGS = 10 V
-40
VGS = 15 V
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 0 V
VGS = 5 V
-20
VGS = 10 V
-40
VGS = 15 V
-60
-60
Conditions:
TJ = -55 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
-80
Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-7
-8
-6
-5
-4
-3
-2
Figure 14. 3rd Quadrant Characteristic at 25 ºC
30
0
-1
-80
Drain-Source Voltage VDS (V)
0
25
-20
VGS = 5 V
-40
VGS = 10 V
VGS = 15 V
Stored Energy, EOSS (µJ)
Drain-Source Current, IDS (A)
VGS = 0 V
20
15
10
5
-60
Conditions:
TJ = 150 °C
tp < 200 µs
Drain-Source Voltage VDS (V)
0
0
-80
100
600
700
800
900
1000
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
1000
Capacitance (pF)
Capacitance (pF)
500
10000
Ciss
Coss
100
Crss
10
400
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
1000
300
Drain to Source Voltage, VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
200
Ciss
100
Coss
10
Crss
1
1
0
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
5
CPM3-0900-0065B Rev. -
200
0
100
200
300
400
500
600
Drain-Source Voltage, VDS (V)
700
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 900V)
800
900
Mechanical Parameters
Parameter
Typ
2.25 x 2.95
Unit
1.82 x 0.785 (x 2)
mm
Die Dimensions (L x W)
Exposed Source Pad Metal Dimensions (Each)
Gate Pad Dimensions
mm
0.8 x 0.5
Chip Thickness
mm
180 ± 10%
Frontside (Source) metallization (Al)
Frontside (Gate) metallization (Al)
Backside (Drain) metallization (Ni/Ag)
µm
4
µm
4
µm
1.8
µm
Chip Dimensions
2.25 mm
0.73 mm
0.8 mm
0.23
mm
0.5 mm
Gate
Source
1.82 mm
2.95 mm
0.065 mm
Source
0.335
mm
0.785 mm
0.08 mm
6
CPM3-0900-0065B Rev. -
0.785 mm
0.3
mm
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
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REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency
(ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree
representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh
Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human
body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not
limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency
medical equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
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SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power/Tools-and-Support
Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power/Tools-and-Support
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
7
CPM3-0900-0065B Rev. - 06-2015
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power