VDS1.2 kV CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 50 A RDS(on) (TJ = 25˚C) 25 mΩ EOFF (TJ = 150˚C) 0.6 mJ Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AIN DBC System Benefits • • • • • ID (TC = 100˚C) Enables Compact and Lightweight Systems High Efficiency Operation Ease of Transistor Gate Control Reduced Cooling Requirements Reduced System Cost Applications • • • • • • Solar Inverters UPS and SMPS Induction Heating Regen Drives 3-Phase PFC Motor Drives Part Number Package Marking CCS050M12CM2 Six-Pack CCS050M12CM2 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Value Unit VDS Drain - Source Voltage 1.2 kV VGS Gate - Source Voltage +25/-10 V ID 2,Rev. S050M12CM Datasheet: CC Parameter 87 Continuous Drain Current 50 A ID(pulse) Pulsed Drain Current 250 A TJ Junction Temperature 150 ˚C -40 to +150 ˚C TC ,TSTG Case and Storage Temperature Range Test Conditions VGS = 20V, TC=25˚C VGS = 20V, TC=100˚C Notes Fig. 21 Pulse width tP = 50 μA Rate limited by Tjmax,TC = 25˚C Visol Case Isolation Voltage 2.5 kV DC, t=1min LStray Stray Inductance 30 nH Measured from pins 20 to 21 M Mounting Torque 5.0 Nm G Weight 180 g PD Power Dissipation 337 W TC = 25ºC, TJ < 150ºC Subject to change without notice. www.cree.com 1 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain - Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) On State Resistance Min. Typ. Max. 1.2 Unit kV 2.3 V 1.6 2 VDS = 1.2 kV, VGS = 0V 0.5 μA VGS, = 20 V, VDS = 0V 43 63 22 Transconductance Ciss Input Capacitance 2.810 Coss Output Capacitance 0.393 21 VDS = 10 V, ID = 2.5 mA, TJ = 150ºC μA 34 mΩ S nF 0.014 Note VDS = 10 V, ID = 2.5 mA 100 25 gfs Test Conditions VGS, = 0V, ID = 100 uA VGS = 20 V, ID = 50 A VGS = 20 V, ID = 50 A, TJ = 150ºC VDS = 20 V, ID = 50 A VDS = 20 V, ID = 50 A, TJ = 150ºC VDS = 800V, VGS = 0V f = 1MHz, VAC = 25mV Crss Reverse Transfer Capacitance EON Turn-On Switching Energy 1.1 mJ EOff Turn-Off Switching Energy 0.6 mJ RG Internal Gate Resistance 1.5 Ω f = 1MHz, VAC = 25mV QG Gate Charge 180 nC VDD= 800V, ID= 50A VDD = 600V, VGS = +20V/-5V ID = 50A, RG = 20Ω Inductive Load = 200 μH Note: IEC 60747-8-4 Definitions Fig. 4 5,6,7 Fig. 8 Fig. 16,17 Fig. 18 Fig. 15 Resistive Switching td(on) Turn-on delay time 21 ns tr(on) VSD fall time 90% to 10% 30 ns td(off) Turn-off delay time 50 ns tf(off) VSD rise time 10% to 90% 19 ns VDD = 800V, RLOAD = 8 Ω VGS = +20/-2V, RG = 3.8 Ω Note: IEC 60747-8-4 Definitions Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots. 2 CCS050M12CM2,Rev. - Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. 1.6 1.85 Unit VSD Diode Forward Voltage QC Total Capacitive Charge 280 μC tRR Reverse Recovery Time TBD ns ERR Reverse Recovery Energy TBD mJ 2.2 V 3.42 C nF 0.18 IF Continuous Forward Current Note IF = 50A, VGS = 0 IF = 50A, TJ = 150ºC IF = 25A, VR = 1000V diF/dt = 500 A/μs, TJ = 25ºC VR=0V, f = 1MHz, TJ = 25ºC 0.23 Total Capacitance Test Conditions VR=400V, f = 1MHz, TJ = 25ºC VR=800V, f = 1MHz, TJ = 25ºC 50 A VGS = -5V, Tcase = 100ºC Thermal Characteristics Symbol 3 Parameter Min. Typ. Max. RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.37 0.49 RthJCD Thermal Resistance Juction-to-Case for Diode 0.42 0.48 CCS050M12CM2,Rev. - Unit ˚C/W Test Conditions Note Typical Performance 200 200 VGS = 20 V Conditions: TJ = -40 °C tp < 50 µs VGS = 15 V 120 80 VGS = 10 V 40 0 3 6 9 120 80 VGS = 10 V 40 VGS = 5 V VGS = 5 V 0 0 12 15 0 3 6 Drain-Source Voltage, VDS (V) 12 15 Figure 2. Typical Output Characteristics TJ = 25ºC 200 2.0 Conditions: TJ = 150 °C tp < 50 µs Conditions: IDS = 50 A VGS = 20 V tp < 50 µs 1.8 VGS = 20 V 160 1.6 VGS = 15 V On Resistance, RDS On (p.u.) Drain Current, IDS (A) 9 Drain-Source Voltage, VDS (V) Figure 1. Typical Output Characteristics TJ = -40ºC VGS = 10 V 120 80 40 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VGS = 5 V 0.0 0 0 3 6 9 12 -50 15 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) Figure 3. Typical Output Characteristics TJ = 150ºC Figure 4. Normalized On-Resistance vs. Temperature 60 100 Conditions: VGS = 20 V tp < 50 µs 50 Conditions: IDS = 50 A tp < 50 µs 90 80 On Resistance, RDS On (mΩ) TJ = 150 °C On Resistance, RDS On (mΩ) VGS = 15 V 160 Drain Current, IDS (A) 160 Drain Current, IDS (A) VGS = 20 V Conditions: TJ = 25 °C tp < 50 µs TJ = 125 °C 40 30 TJ = 25 °C TJ = -40 °C 20 10 70 TJ = -40 °C 60 50 TJ = 150 °C 40 TJ = 25 °C 30 20 10 0 0 0 25 50 75 100 Drain Source Current, IDS (A) Figure 5. Normalized On-Resistance vs. Drain Current For Various Temperatures 4 CCS050M12CM2,Rev. - 12 13 14 15 16 17 18 19 Gate Source Voltage, VGS (V) Figure 6. Normalized On-Resistance vs. Gate-Source Voltage for Various Temperatures 20 Typical Performance 100 200 Conditions: IDS = 50 A tp < 50 µs 90 Drain-Source Current, IDS (A) 80 On Resistance, RDS On (mΩ) VGS = 12 V 70 60 50 VGS = 14 V 40 VGS = 16 V 30 VGS = 18 V 20 VGS = 20 V TJ = 25 °C Conditions: tp < 50 µs VDS = 10 V TJ = 100 °C 150 TJ = 150 °C 100 50 10 0 0 -50 -25 0 25 50 75 100 125 150 0 4 8 Junction Temperature, TJ (°C) Figure 7. On-Resistance vs. Temperature for Various Gate-Source Voltages -3 -2.5 -2 -1.5 -1 12 16 20 Gate-Source Voltage, VGS (V) -0.5 Figure 8. Transfer Characteristic for Various Junction Temperatures 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0 0 VGS = -5 V Drain-Source Current, IDS (A) VGS = 0 V -25 -50 -75 Drain-Source Currnmt, IDS (A) VGS = -2 V -25 -50 -75 Conditions: TJ = -40 °C tp < 50 µs VGS = -2 V VGS = -5 V -100 Drain-Source Voltage, VDS (V) Figure 10. Diode Characteristic at 25ºC Figure 9. Diode Characteristic at -40ºC -2.5 -2 -1.5 -1 VGS = 0 V -100 Drain-Source Voltage, VDS (V) -3 Conditions: TJ = 25 °C tp < 50 µs -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0 0 VGS = 0 V VGS = 10 V -25 -50 VGS = 0 V VGS = -5 V -75 -25 VGS = 20 V VGS = 15 V -50 -75 Conditions: TJ = -40 °C tp < 50 µs Conditions: TJ = 150 °C tp < 50 µs VGS = -2 V -100 Drain-Source Voltage, VDS (V) Figure 11. Diode Characteristic at 150ºC 5 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 5 V CCS050M12CM2,Rev. - -100 Drain-Source Voltage, VDS (V) Figure 12. 3rd Quadrant Characteristic at -40ºC Typical Performance -3 -2.5 -2 -1.5 -1 -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0 0 VGS = 0 V VGS = 0 V -25 VGS = 10 V VGS = 15 V -50 VGS = 20 V -75 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 5 V -25 VGS = 5 V VGS = 10 V -50 VGS = 15 V -75 Conditions: TJ = 25 °C tp < 50 µs Conditions: TJ = 150 °C tp < 50 µs VGS = 20 V -100 -100 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Figure 14. 3rd Quadrant Characteristic at 150ºC Figure 13. 3rd Quadrant Characteristic at 25ºC 10000 Conditions: VDS = 800 V IDS = 50 A IGS = 10 mA 15 CISS 1000 COSS Capacitance (pF) Gate-Source Voltage, VGS (V) 20 10 5 100 CRSS 10 0 Conditions: f = 1 MHz VAC = 25 mV -5 1 0 30 60 90 120 150 180 0 50 Gate Charge (nC) 200 250 Figure 16. Typical Capacitances vs. Drain-Source Voltage (0 - 250V) 10000 3.0 Conditions: VDD = 600 V TJ = 150 °C L = 200 µH RG = 20 Ohms VGS = +20V/-5V CISS 2.5 1000 Switching Loss (mJ) COSS Capacitance (pF) 150 Drain-Source Voltage, VDS (V) Figure 15. Typical Gate Charge Characteristics 100 CRSS 10 Conditions: f = 1 MHz VAC = 25 mV Eon 2.0 Eoff 1.5 1.0 0.5 1 0.0 0 250 500 750 Drain-Source Voltage, VDS (V) Figure 17. Typical Capacitances vs. Drain-Source Voltage (0 - 1000V) 6 100 CCS050M12CM2,Rev. - 1000 0 25 50 75 100 Drain to Source Current, IDS (A) Figure 18. Inductive Switching Energy vs. Drain Current For VDS = 600V, RG = 20 Ω 125 Typical Performance 400 4.5 Conditions: VDD = 800 V TJ = 150 °C L = 200 µH RG = 20 Ohms VGS = +20V/-5V Switching Loss (mJ) 3.5 Eon Maximum Dissipated Power, Ptot (W) 4.0 3.0 Eoff 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 Drain to Source Current, IDS (A) 250 200 150 100 50 Conditions: TJ ≤ 150 °C 80 70 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 120 140 Case Temperature, TC (°C) Figure 21. Continuous Current Derating Curve CCS050M12CM2,Rev. - -20 0 20 40 60 80 100 120 140 Figure 20. Power Dissipation Derating Curve 100 90 -40 Case Temperature, TC (°C) Figure 19. Inductive Switching Energy vs. Drain Current For VDS = 800V, RG = 20 Ω Drain-Source Continuous Current, IDS (DC) (A) 300 0 0 7 Conditions: TJ ≤ 150 °C 350 Package Dimensions (mm) This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. 8 CCS050M12CM2,Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power