CREE CCS050M12CM2

VDS1.2 kV
CCS050M12CM2
1.2kV, 50A Silicon Carbide
Six-Pack (Three Phase) Module
Z-FETTM MOSFET and Z-RecTM Diode
Features
•
•
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50 A
RDS(on) (TJ = 25˚C) 25 mΩ
EOFF (TJ = 150˚C)
0.6 mJ
Package
Ultra Low Loss
Zero Reverse Recovery Current
Zero Turn-off Tail Current
High-Frequency Operation
Positive Temperature Coefficient on VF and VDS(on)
Cu Baseplate, AIN DBC
System Benefits
•
•
•
•
•
ID (TC = 100˚C)
Enables Compact and Lightweight Systems
High Efficiency Operation
Ease of Transistor Gate Control
Reduced Cooling Requirements
Reduced System Cost
Applications
•
•
•
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Solar Inverters
UPS and SMPS
Induction Heating
Regen Drives
3-Phase PFC
Motor Drives
Part Number
Package
Marking
CCS050M12CM2
Six-Pack
CCS050M12CM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Value
Unit
VDS
Drain - Source Voltage
1.2
kV
VGS
Gate - Source Voltage
+25/-10
V
ID
2,Rev. S050M12CM
Datasheet: CC
Parameter
87
Continuous Drain Current
50
A
ID(pulse)
Pulsed Drain Current
250
A
TJ
Junction Temperature
150
˚C
-40 to +150
˚C
TC ,TSTG
Case and Storage Temperature Range
Test Conditions
VGS = 20V, TC=25˚C
VGS = 20V, TC=100˚C
Notes
Fig. 21
Pulse width tP = 50 μA
Rate limited by Tjmax,TC = 25˚C
Visol
Case Isolation Voltage
2.5
kV
DC, t=1min
LStray
Stray Inductance
30
nH
Measured from pins 20 to 21
M
Mounting Torque
5.0
Nm
G
Weight
180
g
PD
Power Dissipation
337
W
TC = 25ºC, TJ < 150ºC
Subject to change without notice.
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1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain - Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
On State Resistance
Min.
Typ.
Max.
1.2
Unit
kV
2.3
V
1.6
2
VDS = 1.2 kV, VGS = 0V
0.5
μA
VGS, = 20 V, VDS = 0V
43
63
22
Transconductance
Ciss
Input Capacitance
2.810
Coss
Output Capacitance
0.393
21
VDS = 10 V, ID = 2.5 mA, TJ = 150ºC
μA
34
mΩ
S
nF
0.014
Note
VDS = 10 V, ID = 2.5 mA
100
25
gfs
Test Conditions
VGS, = 0V, ID = 100 uA
VGS = 20 V, ID = 50 A
VGS = 20 V, ID = 50 A, TJ = 150ºC
VDS = 20 V, ID = 50 A
VDS = 20 V, ID = 50 A, TJ = 150ºC
VDS = 800V, VGS = 0V
f = 1MHz, VAC = 25mV
Crss
Reverse Transfer Capacitance
EON
Turn-On
Switching Energy 1.1
mJ
EOff
Turn-Off Switching Energy 0.6
mJ
RG
Internal Gate Resistance
1.5
Ω
f = 1MHz, VAC = 25mV
QG
Gate Charge
180
nC
VDD= 800V, ID= 50A
VDD = 600V, VGS = +20V/-5V
ID = 50A, RG = 20Ω
Inductive Load = 200 μH
Note: IEC 60747-8-4 Definitions
Fig. 4
5,6,7
Fig. 8
Fig.
16,17
Fig. 18
Fig. 15
Resistive Switching
td(on)
Turn-on delay time
21
ns
tr(on)
VSD fall time 90% to 10%
30
ns
td(off)
Turn-off delay time
50
ns
tf(off)
VSD rise time 10% to 90%
19
ns
VDD = 800V, RLOAD = 8 Ω
VGS = +20/-2V, RG = 3.8 Ω
Note: IEC 60747-8-4 Definitions
Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based
modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and
module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots.
2
CCS050M12CM2,Rev. -
Free-Wheeling SiC Schottky Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
1.6
1.85
Unit
VSD
Diode Forward Voltage
QC
Total Capacitive Charge
280
μC
tRR
Reverse Recovery Time
TBD
ns
ERR
Reverse Recovery Energy
TBD
mJ
2.2
V
3.42
C
nF
0.18
IF
Continuous Forward Current
Note
IF = 50A, VGS = 0
IF = 50A, TJ = 150ºC
IF = 25A, VR = 1000V
diF/dt = 500 A/μs, TJ = 25ºC
VR=0V, f = 1MHz, TJ = 25ºC
0.23
Total Capacitance
Test Conditions
VR=400V, f = 1MHz, TJ = 25ºC
VR=800V, f = 1MHz, TJ = 25ºC
50
A
VGS = -5V, Tcase = 100ºC
Thermal Characteristics
Symbol
3
Parameter
Min.
Typ.
Max.
RthJCM
Thermal Resistance Juction-to-Case for MOSFET
0.37
0.49
RthJCD
Thermal Resistance Juction-to-Case for Diode
0.42
0.48
CCS050M12CM2,Rev. -
Unit
˚C/W
Test Conditions
Note
Typical Performance
200
200
VGS = 20 V
Conditions:
TJ = -40 °C
tp < 50 µs
VGS = 15 V
120
80
VGS = 10 V
40
0
3
6
9
120
80
VGS = 10 V
40
VGS = 5 V
VGS = 5 V
0
0
12
15
0
3
6
Drain-Source Voltage, VDS (V)
12
15
Figure 2. Typical Output Characteristics TJ = 25ºC
200
2.0
Conditions:
TJ = 150 °C
tp < 50 µs
Conditions:
IDS = 50 A
VGS = 20 V
tp < 50 µs
1.8
VGS = 20 V
160
1.6
VGS = 15 V
On Resistance, RDS On (p.u.)
Drain Current, IDS (A)
9
Drain-Source Voltage, VDS (V)
Figure 1. Typical Output Characteristics TJ = -40ºC
VGS = 10 V
120
80
40
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGS = 5 V
0.0
0
0
3
6
9
12
-50
15
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
Figure 3. Typical Output Characteristics TJ = 150ºC
Figure 4. Normalized On-Resistance vs. Temperature
60
100
Conditions:
VGS = 20 V
tp < 50 µs
50
Conditions:
IDS = 50 A
tp < 50 µs
90
80
On Resistance, RDS On (mΩ)
TJ = 150 °C
On Resistance, RDS On (mΩ)
VGS = 15 V
160
Drain Current, IDS (A)
160
Drain Current, IDS (A)
VGS = 20 V
Conditions:
TJ = 25 °C
tp < 50 µs
TJ = 125 °C
40
30
TJ = 25 °C
TJ = -40 °C
20
10
70
TJ = -40 °C
60
50
TJ = 150 °C
40
TJ = 25 °C
30
20
10
0
0
0
25
50
75
100
Drain Source Current, IDS (A)
Figure 5. Normalized On-Resistance vs. Drain Current
For Various Temperatures
4
CCS050M12CM2,Rev. -
12
13
14
15
16
17
18
19
Gate Source Voltage, VGS (V)
Figure 6. Normalized On-Resistance vs. Gate-Source
Voltage for Various Temperatures
20
Typical Performance
100
200
Conditions:
IDS = 50 A
tp < 50 µs
90
Drain-Source Current, IDS (A)
80
On Resistance, RDS On (mΩ)
VGS = 12 V
70
60
50
VGS = 14 V
40
VGS = 16 V
30
VGS = 18 V
20
VGS = 20 V
TJ = 25 °C
Conditions:
tp < 50 µs
VDS = 10 V
TJ = 100 °C
150
TJ = 150 °C
100
50
10
0
0
-50
-25
0
25
50
75
100
125
150
0
4
8
Junction Temperature, TJ (°C)
Figure 7. On-Resistance vs. Temperature
for Various Gate-Source Voltages
-3
-2.5
-2
-1.5
-1
12
16
20
Gate-Source Voltage, VGS (V)
-0.5
Figure 8. Transfer Characteristic for Various
Junction Temperatures
0
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0
VGS = -5 V
Drain-Source Current, IDS (A)
VGS = 0 V
-25
-50
-75
Drain-Source Currnmt, IDS (A)
VGS = -2 V
-25
-50
-75
Conditions:
TJ = -40 °C
tp < 50 µs
VGS = -2 V
VGS = -5 V
-100
Drain-Source Voltage, VDS (V)
Figure 10. Diode Characteristic at 25ºC
Figure 9. Diode Characteristic at -40ºC
-2.5
-2
-1.5
-1
VGS = 0 V
-100
Drain-Source Voltage, VDS (V)
-3
Conditions:
TJ = 25 °C
tp < 50 µs
-0.5
0
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0
VGS = 0 V
VGS = 10 V
-25
-50
VGS = 0 V
VGS = -5 V
-75
-25
VGS = 20 V
VGS = 15 V
-50
-75
Conditions:
TJ = -40 °C
tp < 50 µs
Conditions:
TJ = 150 °C
tp < 50 µs
VGS = -2 V
-100
Drain-Source Voltage, VDS (V)
Figure 11. Diode Characteristic at 150ºC
5
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 5 V
CCS050M12CM2,Rev. -
-100
Drain-Source Voltage, VDS (V)
Figure 12. 3rd Quadrant Characteristic at -40ºC
Typical Performance
-3
-2.5
-2
-1.5
-1
-0.5
0
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0
VGS = 0 V
VGS = 0 V
-25
VGS = 10 V
VGS = 15 V
-50
VGS = 20 V
-75
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 5 V
-25
VGS = 5 V
VGS = 10 V
-50
VGS = 15 V
-75
Conditions:
TJ = 25 °C
tp < 50 µs
Conditions:
TJ = 150 °C
tp < 50 µs
VGS = 20 V
-100
-100
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
Figure 14. 3rd Quadrant Characteristic at 150ºC
Figure 13. 3rd Quadrant Characteristic at 25ºC
10000
Conditions:
VDS = 800 V
IDS = 50 A
IGS = 10 mA
15
CISS
1000
COSS
Capacitance (pF)
Gate-Source Voltage, VGS (V)
20
10
5
100
CRSS
10
0
Conditions:
f = 1 MHz
VAC = 25 mV
-5
1
0
30
60
90
120
150
180
0
50
Gate Charge (nC)
200
250
Figure 16. Typical Capacitances vs. Drain-Source
Voltage (0 - 250V)
10000
3.0
Conditions:
VDD = 600 V
TJ = 150 °C
L = 200 µH
RG = 20 Ohms
VGS = +20V/-5V
CISS
2.5
1000
Switching Loss (mJ)
COSS
Capacitance (pF)
150
Drain-Source Voltage, VDS (V)
Figure 15. Typical Gate Charge Characteristics
100
CRSS
10
Conditions:
f = 1 MHz
VAC = 25 mV
Eon
2.0
Eoff
1.5
1.0
0.5
1
0.0
0
250
500
750
Drain-Source Voltage, VDS (V)
Figure 17. Typical Capacitances vs. Drain-Source
Voltage (0 - 1000V)
6
100
CCS050M12CM2,Rev. -
1000
0
25
50
75
100
Drain to Source Current, IDS (A)
Figure 18. Inductive Switching Energy vs.
Drain Current For VDS = 600V, RG = 20 Ω
125
Typical Performance
400
4.5
Conditions:
VDD = 800 V
TJ = 150 °C
L = 200 µH
RG = 20 Ohms
VGS = +20V/-5V
Switching Loss (mJ)
3.5
Eon
Maximum Dissipated Power, Ptot (W)
4.0
3.0
Eoff
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
Drain to Source Current, IDS (A)
250
200
150
100
50
Conditions:
TJ ≤ 150 °C
80
70
60
50
40
30
20
10
0
-40
-20
0
20
40
60
80
100
120
140
Case Temperature, TC (°C)
Figure 21. Continuous Current Derating Curve
CCS050M12CM2,Rev. -
-20
0
20
40
60
80
100
120
140
Figure 20. Power Dissipation Derating Curve
100
90
-40
Case Temperature, TC (°C)
Figure 19. Inductive Switching Energy vs.
Drain Current For VDS = 800V, RG = 20 Ω
Drain-Source Continuous Current, IDS (DC) (A)
300
0
0
7
Conditions:
TJ ≤ 150 °C
350
Package Dimensions (mm)
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
8
CCS050M12CM2,Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power