CAS300M12BM2 VDS1.2 kV 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-RecTM Diode Esw, Total @ 300A RDS(on) Features • • • • • • • Package 5.0 mΩ 62mm x 106mm x 30mm Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications • • • • • Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits • • • • • 12.0 mJ Induction Heating Motor Drives Solar and Wind Inverters UPS and SMPS Traction Part Number Package Marking CAS300M12BM2 Half-Bridge Module CAS300M12BM2 Test Conditions Notes Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Value Unit VDSmax Drain - Source Voltage 1.2 kV VGSmax Gate - Source Voltage -10/+25 V Absolute Maximum values VGSop Gate - Source Voltage -5/20 V Recommended Operational Values ID 2,Rev. S300M12BM Datasheet: CA Parameter 404 Continuous Drain Current 285 A ID(pulse) Pulsed Drain Current 1500 A TJmax Junction Temperature 150 ˚C -40 to +125 ˚C TC ,TSTG Case and Storage Temperature Range VGS = 20 V, TC = 25 ˚C VGS = 20 V, TC = 90 ˚C Fig. 24 Pulse width tP = 200 μs Repetition rate limited by Tjmax,TC = 25˚C Visol Case Isolation Voltage 4.0 kV AC, 50 Hz , 1 min LStray Stray Inductance 14 nH Measured between terminals 2 and 3 PD Power Dissipation 1660 W TC = 25 ˚C, TJ = 150 ˚C Subject to change without notice. www.cree.com Fig. 23 1 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. V(BR)DSS Drain - Source Breakdown Voltage 1.2 VGS(th) Gate Threshold Voltage 1.8 IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Typ. Max. 2.3 Unit kV VGS, = 0 V, ID = 1 mA V VDS = 10 V, ID = 15 mA 2000 μA VDS = 1.2 kV, VGS = 0V 1 100 nA 5.0 5.7 500 1000 On State Resistance Test Conditions Note Fig 7 VDS = 1.2 kV,VGS = 0V, TJ = 150 ˚C 8.6 9.8 94.8 VGS = 20 V, VDS = 0V VGS = 20 V, IDS = 300 A mΩ VDS = 20 V, IDS = 300 A Fig. 4, 5, 6 gfs Transconductance Ciss Input Capacitance 11.7 Coss Output Capacitance 2.55 Crss Reverse Transfer Capacitance 0.07 Eon Turn-On Switching Energy 6.05 mJ EOff Turn-Off Switching Energy 5.95 mJ Ω f = 200 kHz, VAC = 25 mV nC VDD= 800 V, VGS = -5V/+20V, ID= 300 A, Per JEDEC24 pg 27 Fig. 15 VDD = 600V, VGS = -5/+20V, ID = 300 A, RG(ext) = 2.5 Ω, Timing relative to VDS Note: IEC 60747-8-4, pg 83 Inductive load Fig. 25 RG (int) S VGS = 20 V, IDS = 300 A, TJ = 150 ˚C 93.3 nF Internal Gate Resistance 3.0 QGS Gate-Source Charge 166 QGD Gate-Drain Charge 475 QG Total Gate Charge 1025 td(on) Turn-on delay time 76 ns Rise Time 68 ns 168 ns 43 ns tr td(off) tf Turn-off delay time Fall Time VDS = 20 V, ID = 300 A, TJ = 150 ˚C Fig. 8 VDS = 600 V, f = 200 kHz, VAC = 25 mV Fig. 16, 17 VDD = 600 V, VGS = -5V/+20V ID = 300 A, RG(ext) = 2.5 Ω Note: IEC 60747-8-4 Definitions Fig. 19, 20 Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter VSD Diode Forward Voltage QC Total Capacitive Charge Min. Typ. Max. 1.7 2.0 2.2 2.5 3.2 Unit V Test Conditions IF = 300 A, VGS = 0 IF = 300 A, TJ = 150 ˚C, VGS = 0 Note Fig. 9, 10, 11 μC Note: The reverse recovery is purely capacitive Thermal Characteristics Symbol Parameter Min. Typ. Max. RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.070 0.075 RthJCD Thermal Resistance Juction-to-Case for Diode 0.073 0.076 Unit ˚C/W Test Conditions Tc = 90 ˚C, PD = 150 W Tc = 90 ˚C, PD = 130 W Additional Module Data Symbol Parameter W Weight M Mounting Torque Clearance Distance Creepage Distance 2 CAS300M12BM2,Rev. - Max. Unit Test Condtion 300 g 5 Nm To heatsink and terminals 12 mm Terminal to terminal 30 mm Terminal to terminal 40 mm Terminal to baseplate Note Fig. 27, 28 Typical Performance 600 600 VGS = 20 V VGS = 20 V 500 VGS = 18 V 400 Drain-Source -Source Current, IDS (A) Drain-Source -Source Current, IDS (A) 500 VGS = 14 V VGS = 16 V VGS = 12 V 300 VGS = 10 V 200 100 0 1 2 3 4 5 6 7 VGS = 14 V VGS = 12 V VGS = 16 V 400 VGS = 10 V 300 200 100 Conditions: TJ = -40°C tp = 200 µs 0 VGS = 18 V Conditions: TJ = 25°C tp = 200 µs 0 8 0 1 2 3 Drain-Source Voltage VDS (V) 5 6 7 2.0 600 VGS = 20 V 1.6 On Resistance, RDS On (p.u.) VGS = 16 V VGS = 14 V 400 Conditions: IDS = 300 A VGS = 20 V tp = 200 µs 1.8 VGS = 12 V VGS = 18 V 500 VGS = 10 V 300 200 100 Conditions: TJ = 150°C tp = 200 µs 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 50 75 100 125 Figure 3. Typical Output Characteristics TJ = 150 ˚C Figure 4. Normalized On-Resistance vs. Temperature 12 20 Conditions: IDS = 300 A tp = 200 µs 18 VGS = 12 V VGS = 14 V 8 On-Resistance, RDS ON (mΩ) 10 On Resistance, RDS On (mΩ) 150 Junction Temperature, TJ (°C) Drain-Source Voltage VDS (V) VGS = 16 V 6 VGS = 18 V VGS = 20 V 4 16 Tj = - 40 °C 14 12 10 Tj = 150 °C 8 Tj = 25 °C 6 4 Conditions: IDS = 300 A tp = 200 µs 2 2 0 0 -50 -25 0 25 50 75 100 125 Junction Temperature, TJ (°C) Figure 5. Typical On-Resistance vs. Temperature for Various Gate-Source Voltage 3 8 Figure 2. Typical Output Characteristics TJ = 25 ˚C Figure 1. Typical Output Characteristics TJ = -40 ˚C Drain-Source -Source Current, IDS (A) 4 Drain-Source Voltage VDS (V) CAS300M12BM2,Rev. - 150 10 12 14 16 18 Gate-Source Voltage, VGS (V) Figure 6. Typical On-Resistance vs. Gate Voltage 20 Typical Performance 3.0 500 Conditions VDS = 10 V IDS = 15 0.5mA mA 2.5 Drain-Source Source Current, IDS (A) Threshold Voltage, Vth (V) Typ 2.0 1.5 1.0 0.5 400 TJ = 150 °C 300 -25 0 25 50 75 100 125 TJ = 25 °C 200 TJ = -40 °C 100 0.0 -50 Conditions: VDS = 20 V tp < 200 µs 0 150 0 2 4 Junction Temperature TJ (°C) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 Drain-Source -Source Current, IDS (A) VGS = 0 V -100 -200 VGS = -2 V -300 VGS = -5 V -400 -4.0 -2.0 -1.5 -1.0 -0.5 0.0 Drain-Source -Source Current, IDS (A) -100 -200 -300 VGS = -2 V -400 VGS = 0 V Conditions: TJ = 150°C tp = 200 µs Drain-Source Voltage VDS (V) Figure 11. Diode Characteristic at 150 ˚C 4 CAS300M12BM2,Rev. - -2.5 -2.0 -1.5 -1.0 -0.5 0.0 -200 -300 -400 VGS = -2 V -500 Conditions: TJ = 25°C tp = 200 µs VGS = 0 V -600 Drain-Source Voltage VDS (V) Figure 10. Diode Characteristic at 25 ˚C 0 VGS = -5 V 14 -100 -600 -3.0 -2.5 -2.0 -1.5 -1.0 0.0 VGS = 0 V -100 VGS = 5 V -200 VGS = 10 V VGS = 15 V -300 VGS = 20 V -400 -500 -600 -0.5 0 Drain-Source -Source Current, IDS (A) -2.5 12 0 Figure 9. Diode Characteristic at -40 ˚C -3.0 -3.0 VGS = -5 V Drain-Source Voltage VDS (V) -3.5 10 -500 Conditions: TJ = -40 °C tp = 200 µs -4.0 -3.5 -Source Current, IDS (A) Drain-Source -3.5 8 Figure 8. Transfer Characteristic for Various Junction Temperatures Figure 7. Threshold Voltage vs. Temperature -4.0 6 Gate-Source Voltage, VGS (V) Conditions: TJ = -40 25 °C °C tp = 200 µs Drain-Source Voltage VDS (V) -500 -600 Figure 12. 3rd Quadrant Characteristic at -40 ˚C Typical Performance -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 0 VGS = 0 V -100 VGS = 5 V VGS = 10 V -200 VGS = 15 V -300 VGS = 20 V -400 Drain-Source -Source Current, IDS (A) Drain-Source -Source Current, IDS (A) VGS = 0 V VGS = 15 V -150 VGS = 20 V -200 Conditions: TJ = 150°C 25 °C tp = 200 µs -600 Drain-Source Voltage VDS (V) Figure 14. 3rd Quadrant Characteristic at 150 ˚C 100 25 Conditions: TJ = 25 °C IDS = 300 A VDS = 1000 V Conditions: TJ = 25 °C VAC = 25 mV f = 200 kHz Ciss 10 Capacitance (nF) 20 -250 -300 Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at 25 ˚C Source Voltage, VGS (V) Gate-Source -100 VGS = 10 V -500 Conditions: TJ = 25°C 25 °C tp = 200 µs 15 10 5 Coss 1 Crss 0.1 0 0.01 -5 0 200 400 600 Gate Charge (nC) 800 1000 0 1200 100 100 Drain-Source Voltage, VDS (V) 150 200 1.6 Conditions: TJ = 25 °C VAC = 25 mV f = 200 kHz Ciss 50 Figure 16. Typical Capacitances vs. Drain-Source Voltage (0 - 200 V) Figure 15. Typical Gate Charge Characteristics 1.4 10 1.2 Stored Energy, EOSS (mJ) Capacitance (nF) -50 VGS = 5 V Coss 1 0.1 Crss 1 0.8 0.6 0.4 0.2 0 0.01 0 200 400 600 Drain-Source Voltage, VDS (V) 800 1000 Figure 17. Typical Capacitances vs. Drain-Source Voltage (0 - 1 kV) 5 CAS300M12BM2,Rev. - 0 200 400 600 800 1000 1200 Drain to Source Voltage, VDS (V) Figure 18. Typical Output Capacitor Stored Energy Typical Performance 20 14 12 ETotal 10 8 6 EOn 4 20 ETotal 15 10 0 50 100 150 200 EOn 5 EOff 2 0 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 77 μH 25 Switching Loss (mJ) 16 Switching Loss (mJ) 30 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 77 μH 18 250 300 350 400 EOff 0 450 0 Drain to Source Current, IDS (A) 100 Conditions: TJ = 25 °C VDD = 600 V IDS =300 A VGS = -5/+20 V L = 77 μH 250 300 350 400 450 Figure 20. Inductive Switching Energy vs. Drain Current For VDS = 800 V, RG = 2.5 Ω 80 ETotal 12 ETotal 10 Switching Loss (mJ) 100 60 EOn 40 EOff 8 EOff 6 EOn Conditions: VDD = 600 V RG(ext) = 2.5 Ω IDS =300 A VGS = -5/+20 V L = 77 μH 4 20 2 0 0 0 5 10 15 20 25 30 35 40 0 45 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) External Gate Resistor RG(ext) (Ohms) Figure 21. Inductive Switching Energy vs. RG(ext) Figure 22. Inductive Switching Energy vs. Temperature 450 1800 Drain-Source Source Continous Current, IDS (DC) (A) Conditions: TJ ≤ 150 °C 1600 Maximum Dissipated Power, Ptot (W) 200 14 120 Conditions: TJ ≤ 150 °C 400 350 1400 300 1200 250 1000 200 800 600 150 100 400 200 50 0 0 -25 0 25 50 75 100 125 Case Temperature, TC (°C) Figure 23. Maximum Power Dissipation (MOSFET) Derating vs Case Temperature 6 150 Drain to Source Current, IDS (A) Figure 19. Inductive Switching Energy vs. Drain Current For VDS = 600V, RG = 2.5 Ω Switching Loss (mJ) 50 CAS300M12BM2,Rev. - -25 0 25 50 75 100 125 Case Temperature, TC (°C) Figure 24. Continous Drain Current Derating vs Case Temperature Typical Performance 1200 Conditions: TJ = 25 °C VDD = 600 V IDS = 300 A VGS = -5/+20 V 1000.00 Drain-Source Source Current, IDS (A) 1000 Time (ns) 800 td (off) 600 td (on) 400 tr 200 0 5 10 15 20 25 30 Limited by RDS On 100.00 1 ms 1.00 35 0.1 100 1000 100E-3 0.5 Junction To Case Impedance, ZthJC (oC/W) Junction To Case Impedance, ZthJC (oC/W) 10 Figure 26. Continous Drain Current Derating vs Case Temperature 100E-3 0.3 0.1 0.05 0.02 SinglePulse 0.01 100E-6 0.5 10E-3 0.3 0.1 0.05 1E-3 0.02 0.01 SinglePulse 100E-6 10E-6 10E-6 1E-6 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 Figure 27. MOSFET Junction to Case Thermal Impedance 7 1 Drain-Source Voltage, VDS (V) Figure 25. Timing vs. RG(ext) 1E-3 Conditions: TC = 25 °C D = 0, Parameter: tp 0.01 40 External Gate Resistor, RG(ext) (Ohms) 10E-3 100 ms 10.00 0.10 tf 0 1 µs 100 µs CAS300M12BM2,Rev. - 1E-6 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 Figure 28. Diode Junction to Case Thermal Impedance Schematic Package Dimensions (mm) 8 CAS300M12BM2,Rev. - Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 9 CAS300M12BM2 Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power