Cree CPM2-1200-0080B Silicon Carbide Power MOSFET

CPM2-1200-0080B
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
VDS
1200 V
ID @ 25˚C 36 A
80 mΩ
RDS(on)
N-Channel Enhancement Mode
Features
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Chip Outline
New C2M SiC MOSFET technlogy
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Halogen Free, RoHS Compliant
Benefits
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Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
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Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
Part Number
Die Size (mm)
CPM2-1200-0080B
3.10 x 3.36
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VDSmax
Drain - Source Voltage
1200
V
VGS = 0 V, ID = 100 μA
VGSmax
Gate - Source Voltage
-10/+25
V
Absolute maximum values
VGSop
Gate - Source Voltage
-5/+20
V
Recommended operational values
ID
Continuous Drain Current
ID(pulse)
Pulsed Drain Current
TJ , Tstg
Operating Junction and Storage Temperature
TL
TProc
36
27
A
VGS = 20 V, TC = 25˚C
VGS = 20 V, TC = 100˚C
80
A
-55 to
+175
˚C
Solder Temperature
260
˚C
1.6mm (0.063”) from case for 10s
Maximum Processing Temperature
325
˚C
10 min. maximum
Note (1): Assumes a RθJC < 0.65 K/W
1
Value
CPM2-1200-0080B Rev. B
Pulse width tP limited by Tjmax
Note
Note 1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
Min.
Typ.
Max.
1200
Unit
Test Conditions
V
VGS = 0 V, ID = 100 μA
2.4
3.0
V
VDS = 10V, ID = 5 mA
1.7
2.3
V
VDS = 10V, ID = 5 mA, TJ = 175ºC
100
μA
VDS = 1200 V, VGS = 0 V
250
nA
VGS = 20 V, VDS = 0 V
1
80
Drain-Source On-State Resistance
98
153
8.1
mΩ
VGS = 20 V, ID = 20A, TJ = 175ºC
VDS= 20 V, IDS= 20 A
Fig. 11
Fig. 4,
5, 6
gfs
Transconductance
Ciss
Input Capacitance
950
Coss
Output Capacitance
80
Crss
Reverse Transfer Capacitance
7.6
Eoss
Coss Stored Energy
45
μJ
VAC = 25 mV
EAS
Avalanche Energy, Single Pluse
1
J
ID = 20A, VDD = 50V
EON
Turn-On Switching Energy
265
EOFF
Turn Off Switching Energy
135
μJ
VDS = 800 V, VGS = -5/20 V, ID = 20A,
RG(ext) = 2.5Ω, L= 142 μH
(TO-247-3 Package)
td(on)
Turn-On Delay Time
11
Rise Time
20
Turn-Off Delay Time
23
ns
Fall Time
19
VDD = 800 V, VGS = -5/20 V
ID = 20 A, RG(ext) = 2.5 Ω,
RL = 40 Ω, Timing relative to VDS
Per IEC60747-8-4 pg 83
(TO-247-3 Package)
Internal Gate Resistance
4.6
Ω
f = 1 MHz, VAC = 25 mV
Qgs
Gate to Source Charge
15
Qgd
Gate to Drain Charge
23
nC
Fig. 12
Qg
Total Gate Charge
62
VDS = 800 V, VGS = -5/20 V
ID = 20 A
Per IEC60747-8-4 pg 21
Test Conditions
Note
tr
td(off)
tf
RG(int)
S
VGS = 20 V, ID = 20 A
Note
7.7
VDS= 20 V, IDS= 20 A, TJ = 175ºC
VGS = 0 V
pF
VDS = 1000 V
Fig. 7
Fig. 17,
18
f = 1 MHz
Fig. 16
Reverse Diode Characteristic
Symbol
VSD
Parameter
Diode Forward Voltage
Typ.
Max.
Unit
3.3
V
VGS = - 5 V, ISD = 10 A
3.1
V
VGS = - 5 V, ISD = 10 A, TJ = 175 °C
A
TC = 25˚C
Note 2
VGS = - 5 V, ISD = 20 A, VR = 800 V
dif/dt = 2400 A/µs
Note 2
IS
Continuous Diode Forward Current
36
trr
Reverse Recover time
32
ns
Qrr
Reverse Recovery Charge
192
nC
Irrm
Peak Reverse Recovery Current
10
A
Note (2): When using SiC Body Diode the maximum recommended VGS = -5V
Note (3): For inductive and resistive switching data and waveforms please refer to datasheet for packaged device - Part Number C2M0080120D.
2
CPM2-1200-0080B Rev. B
Fig. 8,
9, 10
Typical Performance
Conditions:
TJ = -55 °C
tp < 200 µs
Drain-Source Current, IDS (A)
60
70
VGS = 20 V
Conditions:
TJ = 25 °C
tp < 200 µs
60
VGS = 18 V
Drain-Source Current, IDS (A)
70
50
VGS = 16 V
40
VGS = 14 V
30
20
VGS = 12 V
10
50
VGS = 20 V
VGS = 18 V
VGS = 16 V
30
VGS = 12 V
20
VGS = 10 V
10
VGS = 10 V
0
0
0.0
2.5
5.0
7.5
10.0
12.5
0.0
2.5
5.0
Drain-Source Voltage, VDS (V)
60
VGS = 18 V
2.0
VGS = 16 V
40
VGS = 14 V
VGS = 12 V
30
VGS = 10 V
20
10
1.5
1.0
0.5
0.0
0
0.0
2.5
5.0
7.5
10.0
-50
12.5
-25
0
25
Figure 3. Output Characteristics TJ = 175 ºC
Conditions:
VGS = 20 V
tp < 200 µs
TJ = 175 °C
160
120
TJ = 25 °C
80
100
125
150
175
Conditions:
IDS = 20 A
tp < 200 µs
200
On Resistance, RDS On (mOhms)
200
75
Figure 4. Normalized On-Resistance vs. Temperature
240
240
50
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
On Resistance, RDS On (mOhms)
12.5
Conditions:
IDS = 20 A
VGS = 20 V
tp < 200 µs
VGS = 20 V
On Resistance, RDS On (P.U.)
Drain-Source Current, IDS (A)
50
10.0
Figure 2. Output Characteristics TJ = 25 ºC
2.5
Conditions:
TJ = 175 °C
tp < 200 µs
7.5
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
TJ = -55 °C
40
160
VGS = 14 V
120
VGS = 16 V
80
VGS = 20 V
VGS = 18 V
40
0
0
0
10
20
30
40
50
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
VGS = 14 V
40
CPM2-1200-0080B Rev. B
60
70
-50
-25
0
25
50
75
100
125
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
150
175
Typical Performance
Drain-Source Current, IDS (A)
40
-6
-7
Conditions:
VDS = 20 V
tp < 200 µs
-5
-3
-4
-2
-1
0
0
Condition:
TJ = -55 °C
tp < 200 µs
VGS = -5 V
TJ = 175 °C
30
-10
Drain-Source Current, IDS (A)
VGS = 0 V
TJ = 25 °C
20
TJ = -55 °C
10
-20
VGS = -2 V
-30
-40
-50
-60
0
0
2
4
6
8
10
12
14
-70
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (A)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-7
-6
-5
-4
-3
-2
Figure 8. Body Diode Characteristic at -55 ºC
-1
0
Condition:
TJ = 25 °C
tp < 200 µs
VGS = -5 V
-7
-6
-5
-4
-3
-2
-1
0
VGS = -5 V
-10
0
Condition:
TJ = 175 °C
tp < 200 µs
VGS = 0 V
0
-10
-20
VGS = -2 V
-30
-40
-50
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 0 V
-20
VGS = -2 V
-30
-40
-50
-60
-60
-70
-70
Drain-Source Voltage, VDS (A)
Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 175 ºC
4.5
25
Conditons
VDS = 10 V
IDS = 5 mA
4.0
20
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
4
CPM2-1200-0080B Rev. B
150
Conditions:
IDS = 20 A
IGS = 100 mA
VDS = 800 V
TJ = 25 °C
175
15
10
5
0
-5
0
10
20
30
40
50
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
60
70
Typical Performance
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
Conditions:
TJ = -55 °C
tp < 200 µs
0
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 0 V
Drain-Source Current, IDS (A)
-20
-30
VGS = 10 V
VGS = 15 V
-40
VGS = 20 V
-50
-10
VGS = 5 V
Drain-Source Current, IDS (A)
-10
VGS = 5 V
VGS = 0 V
VGS = 10 V
-30
VGS = 15 V
-40
VGS = 20 V
-50
-60
-60
-70
Drain-Source Voltage, VDS (V)
-5
-4
-3
-2
-1
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
50
0
Conditions:
TJ = 175 °C
tp < 200 µs
VGS = 0 V
45
VGS = 5 V
-10
-20
VGS = 10 V
-30
VGS = 15 V
VGS = 20 V
-40
-50
40
Stored Energy, EOSS (µJ)
Drain-Source Current, IDS (A)
-70
Drain-Source Voltage, VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-6
-20
35
30
25
20
15
10
5
-60
0
0
-70
Drain-Source Voltage, VDS (V)
200
Figure 15. 3rd Quadrant Characteristic at 175 ºC
10000
800
1000
10000
1200
Coss
100
Crss
10
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
1000
Capacitance (pF)
Capacitance (pF)
600
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
1000
400
Drain to Source Voltage, VDS (V)
Coss
100
10
Crss
1
1
0
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
5
CPM2-1200-0080B Rev. B
200
0
200
400
600
Drain-Source Voltage, VDS (V)
800
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
1000
Mechanical Parameters
Parameter
Typical Value
Unit
Die Dimensions (L x W)
3.10 × 3.36
mm
Exposed Source Pad Metal Dimensions (LxW) Each
1.04 × 1.43
mm
Gate Pad Dimensions (L x W)
0.80 × 0.50
mm
180 ± 40
µm
Top Side Source metallization (Al)
4
µm
Top Side Gate metallization (Al)
4
µm
0.8 / 0.6
µm
Die Thickness
Bottom Drain metallization (Ni/Ag)
Chip Dimensions
6
CPM2-1200-0080B Rev. B
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
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REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
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LTSPICE Models: www.cree.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver: www.cree.com/power/tools-and-support
SiC MOSFET Evaluation Board: www.cree.com/power/tools-and-support
SiC MOSFET Reference designs: http://response.cree.com/SiC_RefDesigns
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications
in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation
of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or
control systems, air traffic control systems, or weapons systems.
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
ademarks and Z-REC and Z-FET are trademarks of Cree, Inc.
7
CPM2-1200-0080B Rev. B
Cree, Inc.
Cree,Drive
Inc.
4600 Silicon
4600 Silicon
Drive
Durham,
NC 27703
Durham,
NC
27703
USA Tel: +1.919.313.5300
USAFax:
Tel: +1.919.313.5300
+1.919.313.5451
Fax: +1.919.313.5451
www.cree.com/power
www.cree.com/power