CPM2-1200-0080B Silicon Carbide Power MOSFET TM C2M MOSFET Technology VDS 1200 V ID @ 25˚C 36 A 80 mΩ RDS(on) N-Channel Enhancement Mode Features • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Halogen Free, RoHS Compliant Benefits • • • • Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications • • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies Pulsed Power applications Part Number Die Size (mm) CPM2-1200-0080B 3.10 x 3.36 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current ID(pulse) Pulsed Drain Current TJ , Tstg Operating Junction and Storage Temperature TL TProc 36 27 A VGS = 20 V, TC = 25˚C VGS = 20 V, TC = 100˚C 80 A -55 to +175 ˚C Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Maximum Processing Temperature 325 ˚C 10 min. maximum Note (1): Assumes a RθJC < 0.65 K/W 1 Value CPM2-1200-0080B Rev. B Pulse width tP limited by Tjmax Note Note 1 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. Max. 1200 Unit Test Conditions V VGS = 0 V, ID = 100 μA 2.4 3.0 V VDS = 10V, ID = 5 mA 1.7 2.3 V VDS = 10V, ID = 5 mA, TJ = 175ºC 100 μA VDS = 1200 V, VGS = 0 V 250 nA VGS = 20 V, VDS = 0 V 1 80 Drain-Source On-State Resistance 98 153 8.1 mΩ VGS = 20 V, ID = 20A, TJ = 175ºC VDS= 20 V, IDS= 20 A Fig. 11 Fig. 4, 5, 6 gfs Transconductance Ciss Input Capacitance 950 Coss Output Capacitance 80 Crss Reverse Transfer Capacitance 7.6 Eoss Coss Stored Energy 45 μJ VAC = 25 mV EAS Avalanche Energy, Single Pluse 1 J ID = 20A, VDD = 50V EON Turn-On Switching Energy 265 EOFF Turn Off Switching Energy 135 μJ VDS = 800 V, VGS = -5/20 V, ID = 20A, RG(ext) = 2.5Ω, L= 142 μH (TO-247-3 Package) td(on) Turn-On Delay Time 11 Rise Time 20 Turn-Off Delay Time 23 ns Fall Time 19 VDD = 800 V, VGS = -5/20 V ID = 20 A, RG(ext) = 2.5 Ω, RL = 40 Ω, Timing relative to VDS Per IEC60747-8-4 pg 83 (TO-247-3 Package) Internal Gate Resistance 4.6 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 15 Qgd Gate to Drain Charge 23 nC Fig. 12 Qg Total Gate Charge 62 VDS = 800 V, VGS = -5/20 V ID = 20 A Per IEC60747-8-4 pg 21 Test Conditions Note tr td(off) tf RG(int) S VGS = 20 V, ID = 20 A Note 7.7 VDS= 20 V, IDS= 20 A, TJ = 175ºC VGS = 0 V pF VDS = 1000 V Fig. 7 Fig. 17, 18 f = 1 MHz Fig. 16 Reverse Diode Characteristic Symbol VSD Parameter Diode Forward Voltage Typ. Max. Unit 3.3 V VGS = - 5 V, ISD = 10 A 3.1 V VGS = - 5 V, ISD = 10 A, TJ = 175 °C A TC = 25˚C Note 2 VGS = - 5 V, ISD = 20 A, VR = 800 V dif/dt = 2400 A/µs Note 2 IS Continuous Diode Forward Current 36 trr Reverse Recover time 32 ns Qrr Reverse Recovery Charge 192 nC Irrm Peak Reverse Recovery Current 10 A Note (2): When using SiC Body Diode the maximum recommended VGS = -5V Note (3): For inductive and resistive switching data and waveforms please refer to datasheet for packaged device - Part Number C2M0080120D. 2 CPM2-1200-0080B Rev. B Fig. 8, 9, 10 Typical Performance Conditions: TJ = -55 °C tp < 200 µs Drain-Source Current, IDS (A) 60 70 VGS = 20 V Conditions: TJ = 25 °C tp < 200 µs 60 VGS = 18 V Drain-Source Current, IDS (A) 70 50 VGS = 16 V 40 VGS = 14 V 30 20 VGS = 12 V 10 50 VGS = 20 V VGS = 18 V VGS = 16 V 30 VGS = 12 V 20 VGS = 10 V 10 VGS = 10 V 0 0 0.0 2.5 5.0 7.5 10.0 12.5 0.0 2.5 5.0 Drain-Source Voltage, VDS (V) 60 VGS = 18 V 2.0 VGS = 16 V 40 VGS = 14 V VGS = 12 V 30 VGS = 10 V 20 10 1.5 1.0 0.5 0.0 0 0.0 2.5 5.0 7.5 10.0 -50 12.5 -25 0 25 Figure 3. Output Characteristics TJ = 175 ºC Conditions: VGS = 20 V tp < 200 µs TJ = 175 °C 160 120 TJ = 25 °C 80 100 125 150 175 Conditions: IDS = 20 A tp < 200 µs 200 On Resistance, RDS On (mOhms) 200 75 Figure 4. Normalized On-Resistance vs. Temperature 240 240 50 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) On Resistance, RDS On (mOhms) 12.5 Conditions: IDS = 20 A VGS = 20 V tp < 200 µs VGS = 20 V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 50 10.0 Figure 2. Output Characteristics TJ = 25 ºC 2.5 Conditions: TJ = 175 °C tp < 200 µs 7.5 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC TJ = -55 °C 40 160 VGS = 14 V 120 VGS = 16 V 80 VGS = 20 V VGS = 18 V 40 0 0 0 10 20 30 40 50 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 VGS = 14 V 40 CPM2-1200-0080B Rev. B 60 70 -50 -25 0 25 50 75 100 125 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 175 Typical Performance Drain-Source Current, IDS (A) 40 -6 -7 Conditions: VDS = 20 V tp < 200 µs -5 -3 -4 -2 -1 0 0 Condition: TJ = -55 °C tp < 200 µs VGS = -5 V TJ = 175 °C 30 -10 Drain-Source Current, IDS (A) VGS = 0 V TJ = 25 °C 20 TJ = -55 °C 10 -20 VGS = -2 V -30 -40 -50 -60 0 0 2 4 6 8 10 12 14 -70 Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (A) Figure 7. Transfer Characteristic for Various Junction Temperatures -7 -6 -5 -4 -3 -2 Figure 8. Body Diode Characteristic at -55 ºC -1 0 Condition: TJ = 25 °C tp < 200 µs VGS = -5 V -7 -6 -5 -4 -3 -2 -1 0 VGS = -5 V -10 0 Condition: TJ = 175 °C tp < 200 µs VGS = 0 V 0 -10 -20 VGS = -2 V -30 -40 -50 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 0 V -20 VGS = -2 V -30 -40 -50 -60 -60 -70 -70 Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A) Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 175 ºC 4.5 25 Conditons VDS = 10 V IDS = 5 mA 4.0 20 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature TJ (°C) Figure 11. Threshold Voltage vs. Temperature 4 CPM2-1200-0080B Rev. B 150 Conditions: IDS = 20 A IGS = 100 mA VDS = 800 V TJ = 25 °C 175 15 10 5 0 -5 0 10 20 30 40 50 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 60 70 Typical Performance -6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 Conditions: TJ = -55 °C tp < 200 µs 0 Conditions: TJ = 25 °C tp < 200 µs VGS = 0 V Drain-Source Current, IDS (A) -20 -30 VGS = 10 V VGS = 15 V -40 VGS = 20 V -50 -10 VGS = 5 V Drain-Source Current, IDS (A) -10 VGS = 5 V VGS = 0 V VGS = 10 V -30 VGS = 15 V -40 VGS = 20 V -50 -60 -60 -70 Drain-Source Voltage, VDS (V) -5 -4 -3 -2 -1 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 50 0 Conditions: TJ = 175 °C tp < 200 µs VGS = 0 V 45 VGS = 5 V -10 -20 VGS = 10 V -30 VGS = 15 V VGS = 20 V -40 -50 40 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -70 Drain-Source Voltage, VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -6 -20 35 30 25 20 15 10 5 -60 0 0 -70 Drain-Source Voltage, VDS (V) 200 Figure 15. 3rd Quadrant Characteristic at 175 ºC 10000 800 1000 10000 1200 Coss 100 Crss 10 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 1000 Capacitance (pF) Capacitance (pF) 600 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 1000 400 Drain to Source Voltage, VDS (V) Coss 100 10 Crss 1 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 CPM2-1200-0080B Rev. B 200 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1000 Mechanical Parameters Parameter Typical Value Unit Die Dimensions (L x W) 3.10 × 3.36 mm Exposed Source Pad Metal Dimensions (LxW) Each 1.04 × 1.43 mm Gate Pad Dimensions (L x W) 0.80 × 0.50 mm 180 ± 40 µm Top Side Source metallization (Al) 4 µm Top Side Gate metallization (Al) 4 µm 0.8 / 0.6 µm Die Thickness Bottom Drain metallization (Ni/Ag) Chip Dimensions 6 CPM2-1200-0080B Rev. B Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • • LTSPICE Models: www.cree.com/power/tools-and-support SiC MOSFET Isolated Gate Driver: www.cree.com/power/tools-and-support SiC MOSFET Evaluation Board: www.cree.com/power/tools-and-support SiC MOSFET Reference designs: http://response.cree.com/SiC_RefDesigns This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. ademarks and Z-REC and Z-FET are trademarks of Cree, Inc. 7 CPM2-1200-0080B Rev. B Cree, Inc. Cree,Drive Inc. 4600 Silicon 4600 Silicon Drive Durham, NC 27703 Durham, NC 27703 USA Tel: +1.919.313.5300 USAFax: Tel: +1.919.313.5300 +1.919.313.5451 Fax: +1.919.313.5451 www.cree.com/power www.cree.com/power