CAS120M12BM2 1.2kV, 13 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec® Diode 1.2 kV RDS(on) 13 mΩ Esw, Total @ 120A, 150 ˚C Features • • • • • • • VDS Package 2.1 mJ 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits • • • • • Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications • • • • • Induction Heating Solar and Wind Inverters DC/DC Converters Line Regen Drives Battery Chargers Part Number Package Marking CAS120M12BM2 Half-Bridge Module CAS120M12BM2 Test Conditions Notes Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol BM2,Rev. - Value Unit VDSmax Drain - Source Voltage 1.2 kV VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/20 V Recommended operational values ID S120M12 Datasheet: CA Parameter ID(pulse) IF TJmax TC ,TSTG Continuous MOSFET Drain Current Pulsed Drain Current 193 138 480 Continuous Diode Forward Current 305 A A A 195 VGS = 20 V, TC = 25 ˚C VGS = 20 V, TC = 90 ˚C Fig. 26 Pulse width tp limited by TJ(max) VGS = -5 V, TC = 25 ˚C VGS = -5 V, TC = 90 ˚C Junction Temperature -40 to +150 ˚C Case and Storage Temperature Range -40 to +125 ˚C 5 kV AC, 50 Hz , 1 min Visol Case Isolation Voltage LStray Stray Inductance 15 nH Measured between terminals 2 and 3 PD Power Dissipation 925 W TC = 25 ˚C, TJ = 150 ˚C Subject to change without notice. www.cree.com Fig. 25 1 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. V(BR)DSS Drain - Source Breakdown Voltage 1.2 VGS(th) Gate Threshold Voltage 1.8 IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) On State Resistance Typ. Max. 2.6 80 300 400 1500 1 100 13 16 23 30 53.8 Unit Test Conditions kV VGS, = 0 V, ID = 300 μA V VDS = 10 V, ID = 6 mA μA VDS = 1.2 kV, VGS = 0V Note Fig. 7 VDS = 1.2 kV,VGS = 0V, TJ = 150 ˚C nA VGS = 20 V, VDS = 0V VGS = 20 V, IDS = 120 A mΩ VDS = 20 V, IDS = 120 A Fig. 4, 5, 6 gfs Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Eon Turn-On Switching Energy 1.7 mJ EOff Turn-Off Switching Energy 0.4 mJ Ω f = 200 kHz, VAC = 25 mV nC VDD= 800 V, VGS = -5V/+20V, ID= 120 A, Per JEDEC24 pg 27 Fig. 15 VDD = 600V, VGS = -5/+20V, ID = 120 A, RG(ext) = 2.5 Ω, Timing relative to VDS Note: IEC 60747-8-4, pg 83 Inductive load Fig. 24 IF = 120 A, VGS = 0 Fig. 10 IF = 120 A, TJ = 150 ˚C, VGS = 0 Fig. 11 RG (int) S VGS = 20 V, IDS = 120 A, TJ = 150 ˚C 48.5 0.88 nF 1.8 Gate-Source Charge 97 QGD Gate-Drain Charge 118 QG Total Gate Charge 378 td(on) Turn-on delay time 38 ns Rise Time 34 ns Turn-off delay time 70 ns tf Fall Time 22 VSD Diode Forward Voltage QC Total Capacitive Charge VDS = 1 kV, f = 200 kHz, VAC = 25 mV Fig. 16, 17 VDD = 600 V, VGS = -5V/+20V ID = 120 A, RG(ext) = 2.5 Ω Load = 142 μH, TJ = 150 ˚C Note: IEC 60747-8-4 Definitions Fig. 22 0.037 Internal Gate Resistance td(off) Fig. 8 6.3 QGS tr VDS = 20 V, ID = 120 A, TJ = 150 ˚C ns 1.5 1.8 1.9 2.4 1.1 V μC ISD = 120A, VDS = 600 V, TJ = 25°C, diSD/dt = 3 kA/μs, VGS = -5 V Thermal Characteristics Symbol Parameter Min. Typ. Max. RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.125 0.135 RthJCD Thermal Resistance Juction-to-Case for Diode 0.108 0.115 Unit Test Conditions Fig. 27 ˚C/W Fig. 28 Additional Module Data Symbol Parameter Unit 290 g Test Condtion W Weight M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 9 mm Terminal to terminal 30 mm Terminal to terminal 40 mm Terminal to baseplate Creepage Distance 2 Max. CAS120M12BM2,Rev. - Note Typical Performance Conditions: TJ = -40 °C tp < 200 µs Drain-Source Current, IDS (A) 300 360 VGS = 20 V VGS = 14 V 240 Conditions: TJ = 25 °C tp < 200 µs 300 VGS = 18 V Drain-Source Current, IDS (A) 360 VGS = 16 V 180 VGS = 12 V 120 VGS = 10 V 60 VGS = 20 V VGS = 18 V 240 180 VGS = 12 V 120 VGS = 10 V 60 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 Drain-Source Voltage, VDS (V) 300 Drain-Source Current, IDS (A) 1.8 Conditions: TJ = 150 °C tp < 200 µs VGS = 20 V VGS = 16 V 240 VGS = 14 V VGS = 12 V 180 VGS = 10 V 120 60 7 8 9 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 30 Conditions: VGS = 20 V tp < 200 µs 25 TJ = 150 °C 20 TJ = 25 °C 15 TJ = -55 °C 10 75 100 125 150 Conditions: IDS = 120 A tp < 200 µs 25 On Resistance, RDS On (mOhms) 30 50 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 ˚C 35 25 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) On Resistance, RDS On (mOhms) 6 Conditions: IDS = 120 A VGS = 20 V tp < 200 µs 1.6 VGS = 18 V 5 Figure 2. Output Characteristics TJ = 25 ˚C On Resistance, RDS On (P.U.) 360 4 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -40 ˚C 5 VGS = 14 V 20 VGS = 16 V 15 VGS = 18 V VGS = 20 V 10 5 0 0 0 50 100 150 200 250 300 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 VGS = 14 V VGS = 16 V CAS120M12BM2,Rev. - 350 -50 -25 0 25 50 75 100 125 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate-Source Voltage 150 Typical Performance 3.5 2.5 2.0 1.5 1.0 160 TJ = 25 °C 120 80 0.0 -50 -25 0 25 50 75 100 125 0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 -4.0 -0.5 0.0 -60 -120 -180 VGS = -5 V -2.0 -1.5 -1.0 -0.5 0.0 -240 VGS = -2 V -300 Conditions: TJ = 25°C tp < 200 µs VGS = 0 V -360 Drain-Source Voltage VDS (V) Figure 10. Diode Characteristic at 25 ˚C 0 VGS = -2 V -2.5 -180 -360 -1.0 -3.0 VGS = -5 V -240 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 Drain-Source Current, IDS (A) -1.5 14 -120 Figure 9. Diode Characteristic at -40 ˚C -2.0 -3.5 -300 Conditions: TJ = -40°C tp < 200 µs Drain-Source Voltage VDS (V) -2.5 12 -60 -240 -3.0 10 -60 VGS = -2 V -3.5 8 0 -180 VGS = 0 V 6 0 -120 VGS = -5 V 4 Figure 8. Transfer Characteristic for Various Junction Temperatures Drain-Source Current, IDS (A) -3.0 Drain-Source Current, IDS (A) -3.5 2 Gate-Source Voltage, VGS (V) Figure 7. Threshold Voltage vs. Temperature Drain-Source Current, IDS (A) TJ = -40 °C 0 150 Junction Temperature TJ (°C) -4.0 TJ = 150 °C 40 0.5 -4.0 Conditions: VDS = 20 V tp < 200 µs 200 Drain-Source Current, IDS (A) 3.0 Threshold Voltage, Vth (V) 240 Conditons VDS = 10 V IDS = 6 mA VGS = 0 V -60 VGS = 5 V VGS = 10 V -120 VGS = 15 V -180 VGS = 20 V -240 VGS = 0 V Conditions: TJ = 150°C tp < 200 µs Drain-Source Voltage VDS (V) Figure 11. Diode Characteristic at 150 ˚C 4 CAS120M12BM2,Rev. - -300 -360 Conditions: TJ = -40°C 25 °C tp = 200 µs Drain-Source Voltage VDS (V) -300 -360 Figure 12. 3rd Quadrant Characteristic at -40 ˚C Typical Performance -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 0 VGS = 0 V -60 VGS = 5 V VGS = 10 V VGS = 15 V -120 VGS = 20 V -180 -240 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 0 V VGS = 10 V -180 VGS = 15 V Figure 14. 3rd Quadrant Characteristic at 150 ˚C 100000 Conditions: IDS = 120 A IGS = 100 mA VDS = 800 V TJ = 25 °C Ciss 10000 Capacitance (pF) 15 10 5 -360 Drain-Source Voltage VDS (V) 25 20 -300 Conditions: TJ = 150°C 25 °C tp = 200 µs Figure 13. 3rd Quadrant Characteristic at 25 ˚C Gate-Source Voltage, VGS (V) -240 VGS = 20 V -360 Drain-Source Voltage VDS (V) 1000 Conditions: TJ = 25 °C VAC = 25 mV f = 200 kHz Coss 100 Crss 10 0 -5 0 50 100 150 200 250 300 350 1 400 0 50 Gate Charge, QG (nC) 100000 10000 500 Stored Energy, EOSS (µJ) 1000 Coss 100 10 200 600 Conditions: TJ = 25 °C VAC = 25 mV f = 200 kHz Ciss 100 150 Drain-Source Voltage, VDS (V) Figure 16. Capacitances vs. Drain-Source Voltage (0 - 200 V) Figure 15. Gate Charge Characteristics Capacitance (pF) -120 -300 Conditions: TJ = 25°C 25 °C tp = 200 µs Crss 400 300 200 100 0 1 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 1 kV) 5 -60 VGS = 5 V CAS120M12BM2,Rev. - 1000 0 200 400 600 800 1000 Drain to Source Voltage, VDS (V) Figure 18. Output Capacitor Stored Energy 1200 Typical Performance 4.0 3.5 3.0 5.0 ETotal 2.5 2.0 EOn 1.5 1.0 EOff 0.5 40 80 4.0 3.0 120 160 200 0 120 160 200 Conditions: VDD = 600 V RG(ext) = 2.5 Ω IDS =120 A VGS = -5/+20 V L = 142 μH 3.0 ETotal 2.5 10 8 EOn 6 EOff 4 ETotal 2.0 EOn 1.5 1.0 EOff 0.5 0.0 0 0 5 10 15 20 25 30 35 40 45 Figure 21. Inductive Switching Energy vs. RG(ext) 500 0 25 50 75 100 125 150 Figure 22. Inductive Switching Energy vs. Temperature Conditions: TJ = 25 °C VDD = 600 V IDS = 120 A VGS = -5/+20 V 450 400 350 300 td (off) 250 td (on) 200 150 tr 100 tf 50 0 0 5 10 15 20 25 30 35 40 External Gate Resistor, RG(ext) (Ohms) Figure 23. Timing vs. RG(ext) CAS120M12BM2,Rev. - 175 Junction Temperature, TJ (°C) External Gate Resistor RG(ext) (Ohms) 6 240 Figure 20. Inductive Switching Energy vs. Drain Current For VDS = 800 V, RG = 2.5 Ω 2 Time (ns) 80 Drain to Source Current, IDS (A) Switching Loss (mJ) Switching Loss (mJ) 12 40 3.5 Conditions: TJ = 25 °C VDD = 600 V IDS =120 A VGS = -5/+20 V L = 142 μH 14 EOff 0.0 240 Figure 19. Inductive Switching Energy vs. Drain Current For VDS = 600V, RG = 2.5 Ω 16 EOn 2.0 Drain to Source Current, IDS (A) 18 ETotal 1.0 0.0 0 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 142 μH 6.0 Switching Loss (mJ) Switching Loss (mJ) 7.0 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 142 μH Figure 24. Resistive Switching Time Description Typical Performance 250 1000 Maximum Dissipated Power, Ptot (W) 900 Drain-Source Continous Current, IDS (DC) (A) Conditions: TJ ≤ 150 °C 800 700 600 500 400 300 200 100 Conditions: TJ ≤ 150 °C 200 150 100 50 0 0 -40 -20 0 20 40 60 80 100 120 -40 140 -20 0 Figure 25. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature 0.3 0.1 0.05 0.02 SinglePulse 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 Time, tp (s) 1 10 Figure 27. MOSFET Junction to Case Thermal Impedance 1000.00 10 µs Drain-Source Current, IDS (A) 80 100 120 140 0.5 0.3 0.1 10E-3 0.05 0.02 SinglePulse 1E-3 0.01 100E-6 100E-6 Limited by RDS On 100.00 100 µs 1 ms 100 ms 10.00 1.00 0.10 Conditions: TC = 25 °C D = 0, Parameter: tp 0.01 0.1 1 10 100 1000 Drain-Source Voltage, VDS (V) Figure 29. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature 7 60 100E-3 0.5 10E-3 40 Figure 26. Continous Drain Current (MOSFET) Derating vs Case Temperature Junction To Case Impedance, ZthJC (oC/W) Junction To Case Impedance, ZthJC (oC/W) 100E-3 20 Case Temperature, TC (°C) Case Temperature, TC (°C) CAS120M12BM2,Rev. - 1E-6 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 10 Figure 28. Diode Junction to Case Thermal Impedance Schematic Package Dimensions (mm) CAS120M12BM2 8 CAS120M12BM2,Rev. - Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots. Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 9 CAS120M12BM2 Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power