CGH35240F, 240W, 2900-3500MHz, GaN HEMT by Cree

CGH35240F
240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
Package Type
: 440201
PN: CGH3524
0F
Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.2 GHz
3.3 GHz
3.4 GHz
3.5 GHz
Units
Output Power
250
240
225
225
220
W
Gain
12.1
11.9
11.6
11.5
11.4
dB
60
59
57
52
48
%
Power Added Efficiency
Note:
Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
15
Rev 2.0 – May 20
Features
•
3.1 - 3.5 GHz Operation
•
240 W Typical Output Power
•
11.6 dB Power Gain at PIN = 42.0 dBm
•
57 % Typical Power Added Efficiency
•
50 Ohm Internally Matched
•
<0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Pulse Width
PW
1
ms
Conditions
Duty Cycle
DC
50
%
Drain-Source Voltage
VDSS
120
Volts
25˚C
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
Power Dissipation
PDISS
345
Watts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
60
mA
25˚C
Maximum Drain Current
IDMAX
24
A
25˚C
Soldering Temperature
TS
245
˚C
Screw Torque
τ
40
in-oz
RθJC
0.5
˚C/W
TC
-40, +150
˚C
1
2
Pulsed Thermal Resistance, Junction to Case3
Case Operating Temperature
3
85˚C
Note:
Current limit for long term, reliable operation
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH35240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%.
1
2
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
Saturated Drain Current2
IDS
46.4
56.0
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 57.6 mA
DC Characteristics1
VDS = 10 V, ID = 57.6 mA
VDS = 28 V, ID = 1.0 A
RF Characteristics (TC = 25˚C, F0 = 3.1-3.5 GHz unless otherwise noted)
3
Output Power1 at 3.1 GHz
POUT
210
250
–
W
VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
Output Power2 at 3.3 GHz
POUT
200
225
–
W
VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
Output Power3 at 3.5 GHz
POUT
180
220
–
W
VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
Power Added Efficiency1 at 3.1 GHz
PAE
48
60
–
%
VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
Power Added Efficiency2 at 3.3 GHz
PAE
48
57
–
%
VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
Power Added Efficiency3 at 3.5 GHz
PAE
40
48
–
%
VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
Power Gain1 at 3.1 GHz
GP
11.0
12.0
–
dB
VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
Power Gain2 at 3.3 GHz
GP
10.8
11.5
–
dB
VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
Power Gain3 at 3.5 GHz
GP
10.5
11.5
–
dB
VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
Small Signal Gain
S21
11.4
14
–
dB
VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
Input Return Loss
S11
–
-9
-4.5
dB
VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
Output Return Loss
S22
–
-10
-6.0
dB
VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
D
–
0.1
–
dB
VDD = 28 V, IDQ = 1.0 A
Pulsed Amplitude Droop
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGH35240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%.
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Gain and Return Losses vs Frequency
Measured in CGH35240-AMP Amplifier Circuit.
VDS = Sparameter
28 V, IDS = 1 A
Typical
20
Gain (dB)
15
10
Magnitude (dB)
5
ORL (dB)
0
-5
IRL (dB)
-10
-15
-20
S21
S11
-25
-30
2000
S22
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
Frequency (MHz)
260
16
250
15
240
14
230
13
220
12
210
11
200
10
190
9
180
Pout (W)
8
Power Gain (dB)
170
160
3000
Gain (dB)
Output Power (W)
Typical Pulsed Output Power and Power Gain vs Frequency
Measured in CGH35240-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1 A, PIN = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20%
7
3100
3200
3300
3400
3500
6
3600
Frequency (MHz)
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
CGH35240 Output Power vs Input Power
VDS = 28 V, IDS = 1 A, Pulse Pout
Width
300 μS, Duty Cycle = 20 %
vs=Pin
60
3.1 GHz
55
3.2 GHz
3.3 GHz
50
3.4 GHz
Output Power (dBm)
3.5 GHz
45
40
35
30
25
20
15
20
25
30
35
40
45
Input Power (dBm)
CGH35240 PAE & Gain vs Input Power
VDS = 28 V, IDS = 1 A, Pulse Width
= 300 μS, Duty Cycle = 20 %
PAE vs Pin
PAE - 3.1 GHz
PAE - 3.2 GHz
PAE - 3.3 GHz
PAE - 3.4 GHz
PAE - 3.5 GHz
Gain - 3.1 GHz
Gain - 3.2 GHz
Gain - 3.3 GHz
Gain - 3.4 GHz
Gain - 3.5 GHz
18
60
16
50
14
40
12
30
10
20
8
10
6
0
Gain (dB)
PAE (%)
70
4
15
20
25
30
35
40
45
50
Input Power (dBm)
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Typical Pulsed Output Power and Power Added Efficiency vs Frequency
Measured in CGH35240-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1 A, PIN = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20%
100
55.0
Pout (dBm)
90
PAE (%)
54.0
80
53.5
70
53.0
60
52.5
50
52.0
40
51.5
3000
3100
3200
3300
3400
3500
PAE (%)
Output Power (dBm)
54.5
30
3600
Frequency (MHz)
Typical Pulse Droop Performance
CGH35240F Pulsed Power Performance
54.0
53.9
300 us 5 %
300 us 10 %
300 us 20 %
300 us 25 %
1 ms 5 %
1 ms 10 %
1 ms 20 %
1 ms 25 %
5 ms 5 %
5 ms 10 %
5 ms 20 %
5 ms 25 %
53.8
Output Power (dBm)
53.7
53.6
53.5
53.4
53.3
53.2
Pulse Width
Duty Cycle (%)
Droop (dB)
10 us
5-25
0.05
50 us
5-25
0.05
100 us
5-25
0.10
300 us
5-25
0.15
1 ms
5-25
0.30
5 ms
5-25
0.60
53.1
53.0
-1
0
1
2
3
4
5
6
Time (ms)
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH35240F Transient Thermal Curve
1.0
0.9
Theta JC (oC/W)
0.8
0.7
0.6
0.5
10 % Duty Cycle - Pdiss = 230 W
0.4
20 % Duty Cycle - Pdiss = 230 W
50 % Duty Cycle - Pdiss = 230 W
0.3
10 % Duty Cycle - Pdiss = 345 W
0.2
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
Pulse Width (seconds)
Pulsed De-rating
Power Dissipation
De-rating Curve
CGH35240 Transient PowerCGH3x240F
Dissipation
Curve
400
Power Dissipation (W)
350
300
100 us, 10 %
300 us, 20 %
1 ms, 20%
250
1 ms, 50 %
200
150
Note 1
100
50
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH35240F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 511 OHM, +/- 1%, 1/16W,0603
1
R2
RES, 5.1,OHM, +/- 1%, 1/16W,0603
1
CAP, 10.0pF, +/-5%,250V, 0603,
2
C1,C3
C2
CAP, 6.8pF, +/- 0.25 pF,250V, 0603
1
C4,C11
CAP, 470PF, +/-5%, 100V, 0603, X
2
CAP, 33 UF, 20%, G CASE
1
CAP,33000PF, 0805,100V, X7R
2
C15
C5,C12
C13
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C6
CAP 10UF 16V TANTALUM
1
CAP, 10pF, +/- 1%, 250V, 0805
2
C9,C10
C16
J1,J2
J3
CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC
1
CONN, SMA, PANEL MOUNT JACK, FL
2
HEADER RT>PLZ .1CEN LK 9POS
1
J4
CONNECTOR ; SMB, Straight, JACK,SMD
1
W1
CABLE ,18 AWG, 4.2
1
L1
FERRITE, 22 OHM, 0805, BLM21PG220SN1
1
PCB, RO4350, 2.5 X 4.0 X 0.030
1
CGH35240F
1
Q1
CGH35240F-AMP Demonstration Amplifier Circuit
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH35240F-AMP Demonstration Amplifier Circuit Outline
CGH35240F-AMP Demonstration Amplifier Circuit Schematic
(CGH35240F)
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH35240F
(Small Signal, VDS = 28 V, IDQ = 1000 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.909
-110.39
0.67
85.30
600 MHz
0.887
-133.63
0.68
52.25
0.001
7.79
0.931
-175.71
0.001
-22.14
0.926
700 MHz
0.861
-157.29
0.67
21.72
161.61
0.002
-50.42
0.925
140.70
800 MHz
0.831
178.80
0.65
-6.95
0.002
-74.38
0.924
120.94
900 MHz
0.800
154.60
0.64
-34.16
0.002
-110.45
0.924
101.95
1.0 GHz
0.770
130.18
0.63
-60.27
0.002
-135.64
0.924
83.44
1.2 GHz
0.723
80.74
0.64
-110.13
0.002
166.59
0.919
46.75
1.4 GHz
0.698
29.48
0.69
-160.34
0.002
127.53
0.896
9.09
1.6 GHz
0.618
-28.54
0.76
137.30
0.004
116.81
0.766
-28.92
1.8 GHz
0.443
-48.39
0.45
107.33
0.003
53.00
0.861
-47.01
2.0 GHz
0.569
-89.52
0.69
73.39
0.003
-0.59
0.915
-88.98
2.1 GHz
0.594
-111.61
0.83
51.20
0.004
-23.48
0.913
-108.69
2.2 GHz
0.606
-133.58
1.01
28.33
0.005
-45.69
0.908
-128.26
2.3 GHz
0.607
-155.92
1.25
4.25
0.007
-71.50
0.902
-148.11
2.4 GHz
0.595
-179.54
1.59
-21.28
0.009
-99.04
0.895
-168.80
2.5 GHz
0.561
154.35
2.11
-49.48
0.013
-129.12
0.883
169.09
2.6 GHz
0.499
124.82
2.87
-80.80
0.018
-161.39
0.861
144.62
2.7 GHz
0.376
85.52
4.03
-118.36
0.027
161.11
0.813
115.40
2.8 GHz
0.177
20.59
5.38
-164.13
0.039
115.01
0.690
79.55
2.9 GHz
0.165
-127.79
6.17
144.62
0.049
64.36
0.480
37.79
3.0 GHz
0.309
163.81
6.11
96.28
0.052
15.24
0.288
-7.26
3.1 GHz
0.354
118.49
5.80
52.70
0.052
-28.98
0.208
-64.36
3.2 GHz
0.329
74.79
5.47
11.41
0.052
-70.29
0.236
-120.98
3.3 GHz
0.286
23.15
5.19
-29.09
0.052
-110.99
0.302
-160.98
3.4 GHz
0.300
-38.01
4.94
-70.05
0.052
-151.88
0.354
167.78
3.5 GHz
0.406
-96.34
4.55
-112.29
0.050
165.57
0.350
142.39
3.6 GHz
0.565
-143.08
4.00
-154.80
0.046
122.85
0.300
127.36
3.7 GHz
0.708
177.87
3.32
163.85
0.040
81.34
0.271
127.66
3.8 GHz
0.799
143.73
2.64
125.19
0.033
42.95
0.321
129.68
3.9 GHz
0.847
113.69
2.09
89.39
0.027
7.05
0.410
122.23
4.0 GHz
0.868
85.65
1.65
56.14
0.022
-25.45
0.497
108.92
4.2 GHz
0.853
30.51
1.10
-6.76
0.016
-84.72
0.622
78.62
4.4 GHz
0.803
-32.21
0.75
-69.35
0.012
-148.46
0.700
47.77
4.6 GHz
0.765
-101.68
0.51
-131.73
0.008
147.89
0.743
16.36
4.8 GHz
0.770
-166.93
0.32
167.88
0.005
101.70
0.762
-17.52
5.0 GHz
0.785
141.18
0.20
113.11
0.004
59.25
0.747
-56.70
5.2 GHz
0.786
100.39
0.13
60.03
0.005
5.11
0.676
-106.08
5.4 GHz
0.761
65.91
0.08
-1.66
0.007
-83.46
0.447
-179.99
5.6 GHz
0.691
35.57
0.03
-48.77
0.005
159.03
0.055
5.8 GHz
0.608
11.51
0.02
-59.15
0.004
57.07
0.310
23.86
6.0 GHz
0.604
-18.74
0.01
-102.12
0.003
-9.32
0.594
-75.04
2
122.03
To download the s-parameters in s2p format, go to the CGH35240F Product Page and click on the documentation tab.
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH35240F (Package Type ­— 440201)
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH35240F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH35240F-TB
CGH35240F-AMP
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH35240F Rev 2.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH35240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf