PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in a flange package. Package Type : 440166 PN: CGH3501 5F Typical Performance 3.4-3.9GHz Parameter (TC = 25˚C) 3.4 GHz 3.5 GHz 3.6 GHz 3.8 GHz 3.9 GHz Units Gain @ POUT = 2 W 11.6 11.8 12.0 11.8 11.2 dB POUT @ 2.0 % EVM 33.0 33.0 33.0 33.5 33.5 dBm Drain Efficiency @ 2.0 % EVM 23.0 23.0 24.0 18.0 17.0 % 4.0 4.5 6.0 13.0 9.0 dB Input Return Loss Note: Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. ch 2007 Rev 1.6 – Mar Features • 3.3 - 3.9 GHz Operation • >11 dB Small Signal Gain • >2.0 W POUT at 2.0 % EVM • 24 % Efficiency at 2.0 W POUT • 15 W Typical P3dB • WiMAX Fixed Access 802.16-2004 OFDM Subject to change without notice. www.cree.com/wireless Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -55, +150 ˚C Operating Junction Temperature TJ 175 ˚C Thermal Resistance, Junction to Case 1 RθJC 5.0 ˚C/W Note: 1 Measured for the CGH35015F at PDISS = 14W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.0 -2.5 -1.8 VDC VDS = 10 V, ID = 3.6 mA Gate Quiescent Voltage VGS(Q) – -2.4 – VDC VDS = 28 V, ID = 60 mA Saturated Drain Current IDS 2.4 2.7 – A VDS = 6.0 V, VGS = 2.0 V V(BR)DSS 84 100 – VDC VGS = -8 V, ID = 3.6 mA Case Operating Temperature TC -10 – +105 ˚C Screw Torque T – – 60 in-oz DC Characteristics Drain-Source Breakdown Voltage RF Characteristics 2,3 Reference 440166 Package Revision 3 (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted) Small Signal Gain GSS 11 12 - dB VDD = 28 V, IDQ = 60 mA η 22 24 – % VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W Back-Off Error Vector Magnitude EVM1 – 2.5 - % VDD = 28 V, IDQ = 60 mA, PAVE = 18 dBm Error Vector Magnitude EVM2 – 2.0 - % VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W Output Mismatch Stress VSWR - 10 : 1 - Y No damage at all phase angles, VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W Input Capacitance CGS – 5.00 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 1.32 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.43 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency1 Dynamic Characteristics Notes: 1 Drain Efficiency = POUT / PDC 2 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. 3 Measured in the CGH35015F-TB test fixture. Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH35015F Rev 1.6 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Typical WiMAX Performance Modeled vs Measured Performance of CGH35015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = 3.5 MHz Simulated & Measured WiMax Amplifier S21 & S11 8 13 6 11 4 9 2 7 0 5 -2 3 -4 1 -6 DB(|S(1,1)|) (R) Simulated -1 Return Loss (dB) Small Signal Gain (dB) 15 -8 -3 DB(|S(2,1)|) (L) Simulated -5 DB(|S(2,1)|) (L) Measured -12 -7 DB(|S(1,1)|) (R) Measured -14 -9 -10 -16 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 Frequency (GHz) Single Tone CW Gain and Efficiency of CGH35015F vs. Output Power in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, Freq = 3.6 GHz 60% 12 50% Gain (dB) 10 40% Gain Efficiency 8 30% 6 20% 4 10% 2 Drain Efficiency CGH35015 Gain & Efficiency vs. CW Pout 14 0% 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 CW Pout (dBm) Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH35015F Rev 1.6 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Typical WiMAX Performance 4.0 40 3.5 35 3.0 EVM(3.6) 30 2.5 Eff(3.6) 25 2.0 20 1.5 15 1.0 10 0.5 5 0.0 Efficiency (%) EVM (%) Typical EVM and Efficiency of CGH35015F in Broadband Amplifier Circuit at 3.6 GHz F=3.6 GHz, 802.16-2004 OFDM, P/A=9.8 dB WiMax EVM & Eff. vs. Pout at 3.6GHz 0 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Average Power Out (dBm) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Typical Constellation Chart, Spectral Mask, and EVM of CGH35015F in Broadband Amplifier Circuit at 3.6 GHz VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH35015F Rev 1.6 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Typical WiMAX Performance Typical EVM and Efficiency at 22dBm and 33 dBm vs Frequency of CGH35015F in Broadband Amplifier Circuit 28 3.0 24 2.5 20 2.0 16 1.5 12 1.0 Efficiency (%) EVM (%) WiMAX Efficiency and EVM at 33 and 22 dBm vs. Frequency 3.5 8 EVM (33dBm) EVM (22dBm) 0.5 4 Efficiency (33dBm) 0.0 0 3.3 3.4 3.5 3.6 3.7 3.8 3.9 Frequency (GHz) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH35015F Rev 1.6 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH35015F-TB Demonstration Amplifier Circuit CGH35015F-TB Demonstration Amplifier Circuit Outline 3-000522 REV 4 CGH35015-TB Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH35015F Rev 1.6 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH35015F-TB Demonstration Amplifier Circuit Schematic CGH35015F-TB Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1 CAP, 0.7pF, +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S 1 C10,C11 CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S 2 CAP, 10.0pF, +/-5%, 0603, ATC 600S 1 CAP, 39 PF±5%, 0603, ATC 600S 2 C4 C5,C13 C14 CAP, 100 PF±5%, 0603, ATC 600S 1 C6 CAP, 470 PF ±10%,100 V, 0603 1 C7,C15 CAP, 33000PF, 100V, 0805, X7R 2 CAP, 10UF, 16V, SMT, TANTALUM (240096) 1 C16 C8 CAP, 1.0UF ±10%, 100V, 1210, X7R 1 C17 CAP, 33UF, 100V, ELECT, FK, SMD 1 R1,R2 RES, 1/16W, 0603, 0 Ohms, 1% 2 R3 RES, 1/16W, 0603, 47 Ohms ≤5% 1 R4 RES, 1/16W, 0603, 100 Ohms ≤5% 1 J1 5-PIN, MOLEX, MALE, CONNECTOR 1 J2 2-PIN, MOLEX, MALE, CONNECTOR 1 SMA, FEMALE, CONNECTOR 2 CGH35015 1 J3,J4 Q1 Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH35015F Rev 1.6 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Product Dimensions CGH35015F (Package Type — 440166) PRELIMINARY Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH35015F Rev 1.6 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/wireless Ryan Baker Marketing Cree, Wireless Devices 919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639 Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH35015F Rev 1.6 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless