CREE CGH35030F

PRELIMINARY
CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
in a ceramic/metal flange package.
Package Type
: 440166
PN: CGH3503
0F
Typical Performance Over 3.3-3.7GHz
Parameter
(TC = 25˚C)
of Demonstration Amplifier
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
Units
10.9
11.1
10.9
10.7
10.8
dB
1.9
1.9
1.9
2.0
2.0
%
Drain Efficiency @ 36 dBm
20.8
20.8
21.6
22.7
23.9
%
Input Return Loss
11.4
8.2
5.3
4.0
3.7
dB
Small Signal Gain
EVM @ 36 dBm
Note:
Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64
QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
2007
Rev 1.4 – May
Features
•
3.3 - 3.9 GHz Operation
•
>11 dB Small Signal Gain
•
2.0 % EVM at 4 W POUT
•
23 % Efficiency at 4 W POUT
•
3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM
•
WiMAX Fixed Access 802.16-2004 OFDM
Subject to change without notice.
www.cree.com/wireless
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDSS
84
Volts
Gate-to-Source Voltage
VGS
-10, +2
Volts
Storage Temperature
TSTG
-55, +150
˚C
Operating Junction Temperature
TJ
175
˚C
Soldering Temperature
TS
245
˚C
RθJC
3.7
˚C/W
Thermal Resistance, Junction to
Case 1
Note:
1
Measured for the CGH35030F at 14 W PDISS
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.6
-2.5
–
VDC
VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.6
–
VDC
VDS = 28 V, ID = 120 mA
Saturated Drain Current
IDS
4.8
5.4
-
A
Drain-Source Breakdown Voltage
VBR
84
100
–
VDC
VGS = -8 V, ID = 7.2 mA
Forward Transconductance
gm
1200
1300
–
mS
VDS = 28 V, ID = 2 A
Case Operating Temperature
TC
-10
-
+105
˚C
Screw Torque
T
-
-
60
in-oz
DC Characteristics
4
RF Characteristics
2,3
VDS = 6.0 V, VGS = 2 V
Reference 440166 Package Revision 3
(TC = 25˚C, F0 = 3.6 GHz unless otherwise noted)
Small Signal Gain
GSS
10.0
10.7
-
dB
VDD = 28 V, IDQ = 120 mA
η
20.0
22.5
–
%
VDD = 28 V, IDQ = 120 mA, PAVE = 4 W
Back-Off Error Vector Magnitude
EVM1
–
2.3
–
%
VDD = 28 V, IDQ = 120 mA,
PAVE = 21 dBm
Error Vector Magnitude
EVM2
–
2.0
–
Output Mismatch Stress
VSWR
-
TBD
-
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 120 mA
Input Capacitance
CGS
–
9.3
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
2.0
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.9
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency1
VDD = 28 V, IDQ = 120 mA, PAVE = 4 W
Dynamic Characteristics
Notes:
1
Drain Efficiency = POUT / PDC
2
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding
Type RS-CC, Coding Rate Type 2/3.
3
4
Measured in the CGH35030F test fixture.
Measured on wafer prior to packaging.
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35030F Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Typical WiMAX Performance
3.5
28
3.0
24
2.5
20
2.0
16
1.5
12
EVM @ 21dBm
EVM @ 36dBm
1.0
Drain Efficiency (%)
EVM (%)
Typical EVM and Efficiency at 21 dBm and 36 dBm vs Frequency of
CGH35030F in Broadband Amplifier Circuit
8
Efficiency
0.5
4
0.0
0
3.3
3.4
3.5
3.6
3.7
Frequency (GHz)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
15
8
13
6
11
4
9
2
Gain (dB)
7
0
S21
5
-2
S11
3
-4
1
-6
-1
-8
-3
-10
-5
-12
-7
-14
-9
Input Return Loss (dB)
Gain and Return Loss vs Frequency of CGH35030F in Broadband Amplifier Circuit
VDD = 28 V, IDQ = 120 mA, OFDM BW = 3.5 MHz
-16
3.0
3.2
3.4
3.6
3.8
4.0
4.2
Frequency (GHz)
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35030F Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
CGH35030F-TB Demonstration Amplifier Circuit Schematic
CGH35030F-TB Demonstration Amplifier Circuit Outline
3-000538 REV1
CGH35030-TB
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35030F Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
CGH35030F-TB Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES,1/16W,0603,1%,100 OHMS
1
R2
RES,1/16W,0603,1%,47 OHMS
1
C6
CAP, 470PF, 10%,100V, 0603
1
C17
CAP, 33 UF, 20%, G CASE
1
C16
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
CAP 10UF 16V TANTALUM
1
C13
CAP, 100.0pF, +/-5%, 0603
1
C1
CAP, 0.8pF, +/-0.05pF, 0603
1
C2,C9,C10
CAP, 0.7pF, +/-0.05pF, 0603
3
C4,C11
CAP, 10.0pF,+/-5%, 0603
2
C5,C12
CAP, 39pF, +/-5%, 0603
2
C7,C14
CAP,33000PF, 0805,100V, X7R
2
CONN SMA STR PANEL JACK RECP
1
J2
HEADER RT>PLZ.1CEN LK 2 POS
1
J1
HEADER RT>PLZ .1CEN LK 5POS
1
Q1
CGH35030F
1
C8
J3,J4
CGH35030F-TB Demonstration Amplifier Circuit
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35030F Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
3300
5.3 - j8.9
13.3 - j10.0
3400
6.7 - j8.6
12.1 - j8.9
3500
7.7 - j9.3
11.0 - j7.8
3600
7.5 - j10.5
10.2 - j6.6
3700
6.3 - j11.0
9.5 - j5.5
Note : VDD = 28V, IDQ = 120mA. In the 440166 package.
Note2: Impedances are extracted from the CGH35030-TB demonstration
circuit and are not source and load pull data off the transistors itself.
1
Product Dimensions CGH35030F (Package Type ­— 440166)
PRELIMINARY
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35030F Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Typical Package S-Parameters
(Small Signal, VDS = 28 V, IDQ = 120 mA, magnitude / angle)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
200 MHz
0.9207
-135.03
16.412
108.79
0.02981
20.50
0.6269
-156.01
300 MHz
0.9136
-150.21
11.402
100.13
0.03104
12.71
0.6531
-164.20
400 MHz
0.9108
-158.59
8.683
94.76
0.03149
8.20
0.6633
-168.67
500 MHz
0.9095
-164.02
6.998
90.82
0.03169
5.12
0.6685
-171.56
600 MHz
0.9087
-167.91
5.855
87.61
0.03177
2.77
0.6716
-173.62
700 MHz
0.9083
-170.90
5.032
84.84
0.03180
0.86
0.6737
-175.22
800 MHz
0.9080
-173.33
4.410
82.33
0.03180
-0.77
0.6754
-176.52
900 MHz
0.9079
-175.38
3.925
80.01
0.03177
-2.22
0.6769
-177.62
1.0 GHz
0.9078
-177.16
3.536
77.82
0.03172
-3.53
0.6782
-178.58
1.1 GHz
0.9077
-178.76
3.218
75.72
0.03167
-4.75
0.6794
-179.45
1.2 GHz
0.9077
179.80
2.952
73.69
0.03160
-5.88
0.6807
179.76
1.3 GHz
0.9077
178.46
2.727
71.72
0.03152
-6.96
0.6819
179.01
1.4 GHz
0.9077
177.20
2.533
69.80
0.03143
-7.98
0.6832
178.31
1.5 GHz
0.9078
176.01
2.366
67.91
0.03134
-8.96
0.6845
177.64
1.6 GHz
0.9078
174.88
2.220
66.05
0.03124
-9.90
0.6858
176.99
1.7 GHz
0.9079
173.79
2.091
64.22
0.03114
-10.80
0.6871
176.35
1.8 GHz
0.9079
172.73
1.976
62.41
0.03102
-11.68
0.6885
175.73
1.9 GHz
0.9080
171.70
1.874
60.62
0.03091
-12.52
0.6899
175.11
2.0 GHz
0.9080
170.70
1.781
58.84
0.03079
-13.34
0.6914
174.50
2.1 GHz
0.9081
169.71
1.698
57.09
0.03066
-14.14
0.6928
173.89
2.2 GHz
0.9082
168.74
1.623
55.34
0.03053
-14.91
0.6943
173.28
2.3 GHz
0.9082
167.78
1.554
53.60
0.03040
-15.65
0.6958
172.67
2.4 GHz
0.9083
166.83
1.491
51.88
0.03027
-16.38
0.6974
172.06
2.5 GHz
0.9083
165.89
1.433
50.17
0.03013
-17.07
0.6989
171.45
2.6 GHz
0.9084
164.95
1.380
48.46
0.02999
-17.75
0.7005
170.83
2.7 GHz
0.9084
164.01
1.330
46.76
0.02985
-18.40
0.7020
170.20
2.8 GHz
0.9084
163.08
1.285
45.07
0.02971
-19.03
0.7036
169.57
2.9 GHz
0.9084
162.14
1.243
43.39
0.02956
-19.64
0.7052
168.92
3.0 GHz
0.9085
161.21
1.203
41.72
0.02942
-20.22
0.7067
168.27
3.1 GHz
0.9085
160.27
1.167
40.04
0.02928
-20.78
0.7083
167.61
3.2 GHz
0.9085
159.33
1.133
38.38
0.02914
-21.32
0.7099
166.94
3.3 GHz
0.9084
158.38
1.101
36.72
0.02900
-21.83
0.7114
166.26
3.4 GHz
0.9084
157.43
1.071
35.63
0.02886
-22.31
0.7129
165.58
3.5 GHz
0.9084
156.48
1.043
33.41
0.02872
-22.77
0.7144
164.87
3.6 GHz
0.9083
155.51
1.016
31.76
0.02859
-23.21
0.7159
164.16
3.7 GHz
0.9082
154.54
0.991
30.12
0.02846
-23.62
0.7173
163.44
3.8 GHz
0.9082
153.56
0.968
28.47
0.02834
-24.01
0.7188
162.70
3.9 GHz
0.9081
152.58
0.946
26.83
0.02822
-24.37
0.7202
161.95
4.0 GHz
0.9079
151.58
0.926
25.19
0.02811
-24.70
0.7215
161.19
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35030F Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
www.cree.com/wireless
Ryan Baker
Marketing
Cree, Wireless Devices
919.287.7816
Tom Dekker
Sales Director
Cree, Wireless Devices
919.313.5639
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35030F Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless