1N4148M Silicon Epitaxial Planar Switching Diode Applications • High-speed switching Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 H C Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25℃) E T M E S Parameter Symbol Peak Reverse Voltage VRM Reverse Voltage VR Average Rectified Forward Current IF(AV) Surge Forward Current at t < 1 s IFSM Power Dissipation Ptot Junction Temperature Storage Temperature Range 1) Value Unit 60 V 50 V 130 mA 500 mA 400 1) mW Tj 200 ℃ Tstg - 65 to + 200 ℃ Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Characteristics at Ta = 25℃ Parameter Symbol Min. Max. Unit V(BR)R 60 - V Forward Voltage at IF = 100 mA VF - 1.1 V Reverse Leakage Current at VR = 50 V IR - 0.5 μA Ctot - 3 pF trr - 4 ns Reverse Breakdown Voltage at IR = 100 µA Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 1 mA, Irr = 0.1 x IR,VR = 6 V, RL = 100 Ω SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 14/01/2013 Rev: 01 1N4148M Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that electrodes are kept at ambient temperature mW 1000 1N 4148M Tj=25 oC f=1MHz 900 1.1 800 P tot 1N 4148M Ctot(VR ) Ctot(0V) 700 H C 1.0 600 500 0.9 400 E T M E S 300 0.8 200 100 0.7 0 0 200 oC 100 0 0 Tamb 2 4 8 6 10 V VR Forward characteristics 10 1N 4148M 3 10 2 o Tj=100 C iF o Tj=25 C 10 1 10 -1 10 -2 0 1 2V VF SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 14/01/2013 Rev: 01