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HTK1A60/KTK1A80
4 Quadrants Sensitive TRIAC
Symbol
FEATURES
 Repetitive Peak Off-State Voltage : 600V/800V
 R.M.S On–State Current (IT(RMS) = 1A)
 Sensitive Gate Trigger Current
- 5[mA] of IGT at I, II and III Quadrants.
- 12[mA] of IGT at IV Quadrant.
SOT-89
T2
Applications
T1
AC power or phase control through low output current of MCU or IC
suck like Heater, Solenoid valve control, etc.
G
General Description
Semihow’s sensitive TRIAC product is a glass passivated device,
has a low gate trigger current, high stability in gate trigger current to
variation of operating temperature and high off state voltage. It is
generally suitable for power and phase control in ac application.
Absolute Maximum Ratings
Symbol
(TJ=25℃ unless otherwise specified )
Parameter
VDRM
Repetitive Peak Off-State Voltage
VRRM
Repetitive Peak Reverse Voltage
IT(AV)
Average On-State Current
IT(RMS)
R.M.S. On-State Current
ITSM
Surge On-State Current
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
Fusing Current
t = 10ms
Forward Peak Gate Power
Dissipation
TJ = 125 °C
Forward Average Gate Power
Dissipation
IFGM
VRGM
I2t
PGM
PG(AV)
TJ
TSTG
Ratings
Conditions
Sine wave, 50/60Hz, Gate open
Unit
HTK1A60
HTK1A80
600
800
V
600
800
V
0.9
A
1
A
12/13
A
0.7
A2S
2
W
TJ = 125 °C, over any 20ms
0.2
W
Forward Peak Gate Current
TJ = 125 °C, pulse width ≤ 20us
0.5
A
Reverse Peak Gate Voltage
TJ = 125 °C, pulse width ≤ 20us
6
V
Operating Junction Temperature
-40~+125
oC
Storage Temperature
-40~+150
oC
Full sine wave, TC = 72oC
◎ SEMIHOW REV.A1,March 2013
HTK1A60_HTK1A80
VDRM = 600V/800V
IT(RMS) = 1 A
ITSM = 13 A
IGT = 5mA/12mA
(TJ=25℃ unless otherwise specified )
Symbol
Parameter
IDRM
Repetitive Peak Off-State Current
IRRM
Repetitive Peak Reverse Current
IGT
Gate Trigger Current
VGT
Gate Trigger Voltage
Voltage1
Conditions
VD = VDRM
VD = VDRM
Min
Typ
Max
Unit
TJ=25oC
-
-
50
uA
TJ=125oC
-
-
5
mA
TJ=25oC
-
-
50
uA
TJ
=125oC
-
-
5
mA
1+, 1-, 3-
-
-
5
mA
3+
-
-
12
mA
1+, 1-, 3-
-
-
1.5
V
3+
-
-
2.0
V
=125oC
0.2
-
-
V
-
1.2
1.6
V
10
-
-
V/us
-
-
5
mA
Min
Typ
Max
Unit
VD = 12V, RL=330Ω
VD = 12V, RL=330Ω
VGD
Non-Trigger Gate
VTM
Peak On-State Voltage
IT = 1.4A, IG = 20mA
dv/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3 VDRM, TJ=125oC
Holding current
IT= 0.2A
IH
VD = 12V, RL=330Ω, TJ
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
Thermal Characteristics
Symbol
Parameter
Conditions
RθJC
Thermal Resistance
Junction to Case
48
oC/W
RθJA
Thermal Resistance
Junction to Ambient
150
oC/W
◎ SEMIHOW REV.A1,March 2013
HTK1A60_HTK1A80
Electrical Characteristics
HTK1A60_HTK1A80
Typical Characteristics
130
180o
150o
1.0
Power dissipation, PD [W]
Maximum allowable case temperature, TC [oC]
1.2
120o
0.8
0.6
90o
0.4
o
60
0.2
30o
0.0
0.0
0.2
0.4
0.6
0.8
1.0
30o
120
60o
110
100
90o
90
120o
80
150o
180o
70
0.0
0.2
Fig 1. R.M.S. current vs. Power dissipation
0.6
0.8
1.0
1.2
Fig 2. R.M.S. current vs. Case temperature
101
15
Surge on state current, ITSM [A]
Gate voltage, VG [V]
0.4
R.M.S. on state current, IT(RMS) [A]
R.M.S. on state current, IT(RMS) [A]
PGM(2W)
25[oC]
I+GT3
PG(AV)(0.2W)
100
25[oC]
I+GT1
I-GT1
I-GT3
12
9
60Hz
50Hz
6
3
VGD
10-1
100
101
102
0
100
103
101
Gate current, IG [mA]
Fig 4. Surge on state current rating
(Non-repetitive)
Fig 3. Gate power characteristics
2.5
3.0
2.0
1.5
I+GT1
I-GT1
I-GT3
1.0
VGT(25oC)
X 100(%)
2.0
VGT(toC)
IGT(25oC)
X 100(%)
2.5
IGT(toC)
102
Time [cycles]
1.5
V+GT1
V-GT1
V+GT3
V-GT3
1.0
0.5
0.5
I+GT3
0.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ[oC]
Fig 5. Gate trigger current vs.
junction temperature
0.0
-50
-25
0
25
50
75
100
125
150
Junction temperature, TJ[oC]
Fig 6. Gate trigger voltage vs.
junction temperature
◎ SEMIHOW REV.A1,March 2013
HTK1A60_HTK1A80
Typical Characteristics
103
TJ=25oC
Thermal impedance [oC/W]
Instantaneous on state current, IT [A]
101
TJ=125oC
100
RS=0.16Ω
VTO=1.10V
10-1
0
1
2
3
4
5
102
101
100
10-2
10-1
Instantaneous on state voltage, VT [V]
100
101
Pulse Time [sec]
Fig 7. Instantaneous on state current vs.
Instantaneous on state voltage
Fig 8. Thermal Impedance vs. pulse time
Measurement of gate trigger current
RL
RL
RG
VG
(1) Quadrant I
VDD
RG
VG
(2) Quadrant II
RL
VDD
RG
VG
(3) Quadrant III
RL
VDD
VDD
RG
VG
(4) Quadrant IV
Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet.
◎ SEMIHOW REV.A1,March 2013
HTK1A60_HTK1A80
Package Dimension
SOT-89-3L
◎ SEMIHOW REV.A1,March 2013