SFT502 and SFT504 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 5 AMP 200 Volts HIGH SPEED NPN Transistor Part Number / Ordering Information 1/ SFT502 __ __ SFT504 __ __ ¦ + Screening 2/ __ = Not Screen ¦ TX = TX Level ¦ TXV = TXV Level ¦ S = S Level ¦ + Package 3/ __ = TO-5 Features: • • • • • • • • • Radiation Tolerant Fast Switching High Frequency, 50 MHz Typical BVCEO 150 Volts Min High Linear Gain Very Low Leakage and Saturation 200ºC Operating Temperature Gold Eutectic Die Attach Designed for Complementary Use with SFT501 and SFT503 Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 150 Volts Collector – Base Voltage VCBO 200 Volts Emitter – Base Voltage VEBO 7 Volts Continues Collector Current IC 5 Amps Base Current IB 1 Amps Power Dissipation @ TC = 50ºC Derate above 50ºC PD 10 66.6 W mW/ºC Top & Tstg -65 to +200 ºC RθJC 15 ºC/W Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-5 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B176H DATA SHEET #: TR0041C DOC SFT502 and SFT504 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 4/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage IC = 50mA BVCEO 150 –– –– Volts Collector – Base Breakdown Voltage IC = 200µA BVCBO 200 –– –– Volts Emitter – Base Breakdown Voltage IE = 200µA BVEBO 7 –– –– Volts Collector – Cutoff Current VCE = 100 V ICEO –– –– 1 µA Collector – Cutoff Current VCB = 100 V ICBO –– –– 500 nA VEB = 6 V IEBO –– –– 500 nA VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A hFE 20 30 20 50 50 40 –– –– –– –– –– –– –– –– –– –– –– –– –– Collector – Emitter Saturation Voltage * IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VCE(Sat) –– –– –– –– 0.75 1.5 Volts Base – Emitter Saturation Voltage * IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VBE(Sat) –– –– –– –– 1.3 1.5 Volts VCE = 5V, IC = 0.5A, f = 10MHz fT 70 –– –– MHz Output Capacitance VCB = 10V, IE = 0A, f = 1MHz cob –– –– 225 pF Input Capacitance VBE = 10V, IC = 0A, f = 1MHz Cib –– –– 900 pF td –– –– 50 nsec tr –– –– 250 nsec tS –– –– 900 nsec tf –– –– 300 nsec Emitter – Cutoff Current DC Current Gain * SFT502 SFT504 Current Gain Bandwidth Product Delay Time Rise Time Storage Time Fall Time VCC = 50V, IC = 5A, IB1 = IB2 = 0.5A NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. PIN ASSIGNMENT Available Part Numbers: SFT502 SFT504 Package TO-5 Pin 1 Emitter Pin 2 Base Pin 3 (Case) Collector