SED10HB200, SED10HE200 and SED10HF200

Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
SED10HB200, SED10HE200
and SED10HF200
10 AMP
200 VOLTS
SCHOTTKY RECTIFIER
Designer’s Data Sheet
Part Number / Ordering Information 1/
SED10 __ 200 __




L Screening
2/
___ = None
TX = TX Level
TXV = TXV Level
S = S Level
L Configuration
HB = without lead
HE = with lead
HF = with lead, reverse polarity







FEATURES:
Low Reverse Leakage
Low Forward Voltage Drop
Hermetically Sealed Power Surface
Mount Package
Guard Ring for Overvoltage Protection
Eutectic Die Attach
175oC Operating Temperature
TX, TXV, and Space Level Screening
Available2/
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 100oC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, 1 pulse, TA = 25oC)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Case
SED10HB200
SED10HE200
SED10HF200
Symbol
Value
Units
VRRM
VRWM
VR
200
Volts
IO
10
Amps
IFSM
100
Amps
TOP & Tstg
-55 to +175
RJC
2 (typ 1.6)
2 (typ 1.6)
5.00
Notes:
1/ For ordering information, price, operating curves, and availability – Contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
C
o
C/W
SEDPACK 1
HB Series
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
o
DATA SHEET #: SH0069B
HE / HF Series
DOC
SED10HB200, SED10HE200
and SED10HF200
Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
Maximum
Typical
Unit
Instantaneous Forward Voltage Drop
(IF =5 ADC, 300-500 sec Pulse)
TA = -55oC
TA = 25oC
TA = 125oC
VF1
VF2
VF3
0.80
0.70
0.92
0.75
0.61
VDC
Instantaneous Forward Voltage Drop
(IF =10 ADC, 300-500 sec Pulse)
TA = -55oC
TA = 25oC
TA = 125oC
VF4
VF5
VF6
0.85
0.75
1.00
0.78
0.68
VDC
Instantaneous Forward Voltage Drop
(IF =20 ADC, 300-500 sec Pulse)
TA = -55oC
TA = 25oC
TA = 125oC
VF7
VF8
VF9
0.95
-
1.24
0.85
0.76
VDC
Reverse Leakage Current
(Rated VR, 300 sec pulse minimum)
TA = 25oC
TA = 100oC
TA = 125oC
IR1
IR2
IR3
10
5
0.7
0.2
0.85
uA
mA
mA
VR = 5V
VR = 10V
CJ1
CJ2
225
-
185
135
pF
Junction Capacitance
(TA = 25oC, f = 1 MHz)
CASE OUTLINE:
SED10HB200
CASE OUTLINE: SED10HE200
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
CASE OUTLINE: SED10HF200
DATA SHEET #: SH0069B
DOC