ROHM DTC124TKA

100mA / 50V Digital transistors
(with built-in resistor)
DTC124TM / DTC124TE / DTC124TUA / DTC124TKA
 Applications
Inverter, Interface, Driver
 Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
 Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
 Dimensions (Unit : mm)
DTC124TM
0.7
1.6
DTC124TE
0.55
0.3
0.2
(3)
(2)
0.2
(1)(2)
0.4 0.4
0.2
0.13
0.5
(1) Base
(2) Emitter
(3) Collector
0.8
ROHM : VMT3
0.2
2.0
ROHM : EMT3
EIAJ : SC-75A
0.2
2.9
0.4
0.7
0.8
(3)
1.6
2.8
2.1
1.25
0.1Min.
(1)
0.65 0.65
0.15
1.3
ROHM : UMT3
EIAJ : SC-70
1.1
DTC124TKA
(3)
(2)
(1) Emitter
(2) Base
(3) Collector
1.0
Abbreviated symbol : 05
0.9
0.3
0.15
0.5 0.5
Abbreviated symbol : 05
DTC124TUA
(1)
(2)
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : 05
(1)
0.95 0.95
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
0.3Min.
0.22
0.1Min.
0.8
1.2
0.8
(3)
1.6
1.2
0.32
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : 05
 Inner circuit
C
B
R1
E
B : Base
C : Collector
E : Emitter
R1=22kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.B
DTC124TM / DTC124TE / DTC124TUA / DTC124TKA
Data Sheet
 Packaging specifications
VMT3 EMT3 UMT3 SMT3
Taping Taping Taping Taping
Package
Packaging type
T2L
Code
Basic ordering unit (pieces) 8000
Part No.
3000
T106
3000
T146
3000
−
−
−
−
−
TL
DTC124TM
DTC124TE
−
DTC124TUA
−
−
DTC124TKA
−
−
−
−
 Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
DTC124TM DTC124TE DTC124TUA DTC124TKA
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector power dissipation
Pc
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
150
200
mW
 Electrical characteristics (Ta=25C)
Symbol Min.
Parameter
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
BVCBO
50
−
−
V
IC=50μA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE=50μA
Collector cutoff current
ICBO
−
−
0.5
μA
VCB=50V
Emitter cutoff current
IEBO
−
−
0.5
μA
VEB=4V
VCE(sat)
−
−
0.3
V
IC/IB=5mA/0.5mA
DC current transfer ratio
hFE
100
250
600
−
VCE=5V, IC=1mA
Input resistance
R1
15.4
22
28.6
kΩ
Transition frequency
fT ∗
−
250
−
MHZ
Collector-emitter saturation voltage
−
VCE=10V, IE=−5mA, f=100MHZ
∗ Characteristics of built-in transistor
1k
VCE=5V
DC CURRENT GAIN : hFE
500
200
100
Ta=100˚C
25˚C
-40˚C
50
20
10
5
2
1
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : IC(A)
Fig.1 DC current gain vs. collector
current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
 Electrical characteristic curves
1
500m
lC/lB=10
200m
Ta=100˚C
25˚C
-40˚C
100m
50m
20m
10m
5m
2m
1m
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : IC(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/2
2009.06 - Rev.B
Notice
Notes
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