-100mA / -50V Digital transistors (with built-in resistors) DTA124TM / DTA124TE / DTA124TUA / DTA124TKA Applications Inverter, Interface, Driver Features 1)Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on / off conditions need to be set for operation, making the device design easy. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Dimensions (Unit : mm) 0.7 1.6 DTA124TE 0.55 0.3 0.2 (3) 0.8 1.2 0.8 (3) (2) 0.2 (1)(2) 0.4 0.4 0.13 (1) Base (2) Emitter (3) Collector 0.5 0.8 (1) 0.2 ROHM : EMT3 0.2 0.15 0.5 0.5 1.0 Abbreviated symbol : 95 DTA124TUA 2.0 Abbreviated symbol : 95 0.9 0.2 0.3 2.9 DTA124TKA 1.1 0.4 0.7 0.8 (3) 1.6 2.8 2.1 1.25 (3) (1) 0.65 0.65 0.15 1.3 0.1Min. (2) (1) Emitter (2) Base (3) Collector ( 2) (1) Emitter (2) Base (3) Collector (1) 0.95 0.95 0.15 1.9 ROHM : UMT3 EIAJ : SC-70 Each lead has same dimensions Abbreviated symbol : 95 ROHM : SMT3 EIAJ : SC-59 0.3Min. 0.22 ROHM : VMT3 0.1Min. 1.2 0.32 1.6 DTA124TM (1) Emitter (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol : 95 Inner circuit C B R1 E B : Base C : Collector E : Emitter R1=22kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.B DTA124TM / DTA124TE / DTA124TUA / DTA124TKA Data Sheet Packaging specifications Part No. Package VMT3 EMT3 Package type Taping Taping Taping Taping UMT3 SMT3 Code T2L TL T106 T146 Basic ordering unit (pieces) 8000 3000 3000 3000 − − − − − DTA124TM DTA124TE − DTA124TUA − − DTA124TKA − − − − Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit DTA124TM DTA124TE DTA124TUA DTA124TKA Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Collector power dissipation PC Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 200 mW Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −50 − − V IC=−50μA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50μA Collector cutoff current ICBO − − −0.5 μA VCB=−50V Emitter cutoff current IEBO − − −0.5 μA VEB=−4V VCE(sat) − − −0.3 V IC/IB=−5mA/−0.5mA VCE=−5V, IC=−1mA Parameter Collector-emitter saturation voltage DC current transfer ratio hFE 100 250 600 − Input resistance R1 15.4 22 28.6 kΩ Transition frequency fT ∗ − 250 − MHz Conditions − VCE=−10V, IE=5mA, f=100MHz ∗ Characteristics of built-in transistor 1k VCE=−5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 1 -100μ -200μ -500μ -1m -2m -5m -10m -20m -50m -100m COLLECTOR URRENT : IC (A) Fig.1 DC current gain vs. collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristic curves -1 IC/IB=10 -500m -200m -100m -50m -20m -10m Ta=100°C 25°C −40°C -5m -2m -1m -10μ -20μ -50μ -100μ -200μ -500μ -1m -2m -5m -10m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 2/2 2009.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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