500mA / 40V Digital transistors (with built-in resistors) DTD123TK Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTD123TK 2.9 1.1 0.4 0.8 (3) 1.6 2.8 (2) (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 0.3Min. Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on / off conditions need to be set for operation, making the device design easy. (1) Emitter (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol : F02 Structure NPN epitaxial planar silicon transistor (Resistor built-in type) Packaging specifications Part No. Inner circuit Package SMT3 Packaging type Taping Code T146 Basic ordering unit (pieces) 3000 C B R1 DTD123TK E B : Base C : Collector E : Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits DTD123TK Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ R1=2.2k Unit 1/2 2009.06 - Rev.B DTD123TK Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 50 V IC50A Conditions Collector-emitter breakdown voltage BVCEO 40 V IC1mA Emitter-base breakdown voltage BVEBO 5 V IE50A Collector cutoff current ICBO 0.5 A VCB50V Emitter cutoff current IEBO 0.5 A VEB4V VCE(sat) 0.3 V IC/IB50m/2.5mA DC current transfer ratio hFE 100 250 600 VCE5V, IC50mA Input resistance R1 1.54 2.2 2.86 k Transition frequency fT 200 MHz Collector-emitter saturation voltage VCE10V, IE50mA, f100MHz Characteristics of built-in transistor 1k VCE5V DC CURRENT GAIN : hFE 500 200 100 Ta100°C 25°C 40°C 50 20 10 5 2 1 500 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristic curves 1 lC/lB20 500m Ta100°C 25°C 40°C 200m 100m 50m 20m 10m 5m 2m 1m 500 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 2/2 2009.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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