-100mA/-50V Digital transistors(with built-in resistors) DTA044TM / DTA044TEB / DTA044TUB Dimensions (Unit : mm) Features 1) Built-in input resistor enables the direct control of base terminal by input voltage without external resistor. (See Inner circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. VMT3 Abbreviated symbol : 08 EMT3F (3) Structure PNP epitaxial planar silicon transistor (Resistor built-in type) (1) (2) Abbreviated symbol : 08 UMT3F 2.0 0.9 0.53 1.25 (3) 0.425 2.1 0.425 0.32 (1) 0.65 0.65 1.3 0.53 Applications Inverter, Interface, Driver (2) 0.13 Abbreviated symbol : 08 Packaging specifications Package Packaging Type Type Code Basic ordering unit (pieces) DTA044ＴM DTA044ＴEB DTA044ＴUB Inner circuit VMT3 Taping T2L EMT3F Taping TL UMT3F Taping TL 8000 3000 3000 ○ - ○ - ○ R1 C B B : Base C : Collector E : Emitter E R1=47kΩ Absolute maximum (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation *1 Junction temperature Range of storage temperature Symbol M VCBO VCEO VEBO IC(max) PD Tｊ Tstg Limits(DTA044T□) EB UB -50 -50 -5 -60 150 200 150 -55 to +150 Unit V V mA mA mW * C C *1 Each terminal mounted on a recommended land www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/2 2010.09 - Rev.A DTA044TM / DTA044TEB / DTA044TUB Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -50 - - V Collector-emitter breakdown voltage BVCEO -50 - - V IC=1ｍA Emitter-base breakdown voltage Collector cutoff current Max. Test Conditions Unit IC=50μA BVEBO -5 - - V IE=50μA ICBO - - -500 nA VCB=-50V -500 nA VEB=-4V Emitter cutoff current IEBO - - DC current transfer ratio ｈFE - -0.07 -0.15 V IC=-5mA / IB=-0.5mA VCE(sat) 100 - 600 - VCE=-10V / IC=-5mA Transition frequency fr - 250 - MHz VCE=-10V / IE=5mA f=100MHｚ Output capacitance Cob 32.9 47 61.1 kΩ Collector-emitter saturation voltage 1000 DC CURRENT GAIN : hFE VCE=-10.0V 100 10 1 -0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC -1 -10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristics curves -100 COLLECTOR CURRENT : IC (mA) IC/IB=10 -0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC -0.01 -0.001 -0.01 -0.1 -1 -10 COLLECTOR CURRNET : IC (mA) Fig.1 DC Current Gain vs. Collector Current www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. -1 Fig.2 Collector Saturation Voltage vs. Collector Current 2/2 2010.09 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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