-100mA / -50V Digital transistors (with built-in resistors) DTA115TM / DTA115TE / DTA115TUA / DTA115TKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTA115TM 0.2 0.8 1.2 (3) (1)(2) 0.22 0.2 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making the device design easy. 4) Higher mounting densities can be achieved. 1.2 0.32 0.4 0.4 0.13 0.5 0.8 (1) Base (2) Emitter (3) Collector ROHM : VMT3 Abbreviated symbol : 99 DTA115TE 0.7 1.6 0.55 0.3 0.8 (2) 1.6 (3) (1) 0.2 0.2 0.15 0.5 0.5 ROHM : EMT3 EIAJ : SC-75A Packaging specifications Package VMT3 EMT3 UMT3 SMT3 Packaging type Taping Taping Taping Taping Code T2L TL T106 T146 Basic ordering Part No. unit (pieces) 8000 3000 3000 3000 − − − − − 0.1Min. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) 1.0 Abbreviated symbol : 99 DTA115TUA 2.0 (1) Emitter (2) Base (3) Collector 0.9 0.2 0.3 0.7 DTA115TE − DTA115TUA − − DTA115TKA − − 2.1 (1) (2) 0.65 0.65 − ROHM : UMT3 EIAJ : SC-70 − 0.15 1.3 Abbreviated symbol : 99 DTA115TKA (1) Emitter (2) Base (3) Collector 1.1 2.9 Inner circuit 0.1Min. DTA115TM 1.25 (3) 0.4 0.8 (3) 1.6 2.8 C R1 E : Emitter C : Collector B : Base E (2) (1) 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 R1=100kΩ 1.9 Abbreviated symbol : 99 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 0.3Min. B (1) Emitter (2) Base (3) Collector 2009.06 - Rev.C DTA115TM / DTA115TE / DTA115TUA / DTA115TKA Data Sheet Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA Parameter Collector current Collector power dissipation DTA115TM / DTA115TE 150 PC DTA115TUA / DTA115TKA mW 200 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −50 − − V IC= −50μA Collector-emitter breakdown voltage BVCEO −50 − − −5 − − V V IC= −1mA Emitter-base breakdown voltage BVEBO ICBO − − −0.5 μA VCB= −50V Parameter Collector cutoff current Conditions IE= −50μA IEBO − − −0.5 μA VEB= −4V VCE(sat) − − −0.3 hFE 100 250 600 V − IC= −1mA , VCE= −5V Input resistance R1 130 kΩ fT ∗ 70 − 100 Transition frequency 250 − MHZ Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio IC/IB= −1mA/−0.1mA − VCE= −10V , IE=5mA , f=100MHZ ∗Characteristics of built-in transistor 1k VCE=5V Ta=25°C Ta=100°C DC CURRENT GAIN : hFE 500 200 100 Ta= −40°C 50 20 10 5 2 1 10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ CORRECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristic curves 1 IC/IB=10/1 500m 200m Ta=100°C 100m Ta=25°C 50m 20m Ta= −40°C 10m 5m 2m 1m 10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current 2/2 2009.06 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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