SP8005

Green
Product
SP8005
S a mHop Microelectronics C orp.
Ver 2.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
3.5 @ VGS=4.5V
20V
32A
3.7 @ VGS=4.0V
Suface Mount Package.
3.9 @ VGS=3.7V
ESD Protected.
4.3 @ VGS=3.1V
5.0 @ VGS=2.5V
P in 1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
TSON 3.3 x 3.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
32
Units
V
V
A
25.6
A
96
A
TA=25°C
1.67
W
TA=70°C
1.07
W
-55 to 150
°C
75
°C/W
Limit
20
±12
TA=25°C
TA=70°C
ad
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Sep,13,2013
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SP8005
Ver 2.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VGS=0V , ID=250uA
Min
Typ
Max
20
Units
V
uA
1
±10
uA
1.1
1.5
V
VDS=16V , VGS=0V
VGS= ±12V , VDS=0V
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=16A
0.5
2.3
2.8
3.5
m ohm
VGS=4.0V , ID=16A
2.5
3.0
3.7
m ohm
VGS=3.7V , ID=16A
2.6
3.1
3.9
m ohm
VGS=3.1V , ID=16A
2.8
3.3
4.3
m ohm
VGS=2.5V , ID=16A
VDS=5V , ID=16A
3.0
3.5
5.0
m ohm
56
S
2550
528
470
pF
pF
pF
62
ns
174
ns
138
ns
73
ns
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=10V,VGS=0V
f=1.0MHz
c
VDD=16V
ID=16A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
VDS=16V,ID=32A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=32A
30
nC
5.1
nC
13.7
nC
0.85
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 1%.
_ 10us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum juncting temperature.
Sep,13,2013
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SP8005
Ver 2.0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
Mounted on FR-4 board of
1 inch2 , 2oz
2
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
R
DS
mit
) Li
(ON
100us
10
1ms
1
10ms
100ms
1s
VGS=4.5V
Single Pulse
TA=25 C
0.1
0.01
0.1
DC
1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
100
Mounted on FR-4 board of
1 inch2 , 2oz
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Sep,13,2013
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SP8005
Ver 2.0
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
100
VGS = 4.5 V
ID - Drain Current - A
ID - Drain Current - A
4.0 V
80
3.7 V
60
3.1 V
2.5 V
40
10
25° C
75° C
0.1
20
0
0.01
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
ID = 1.0mA
1.1
0.9
0.7
0.5
-50
0
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
8
VGS = 2.5 V
3.1 V
3.7 V
4
4.5 V
2
0
0.1
1
10
100
2.5
3
TA = -25°C
10
25°C
75°C
1
125°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
4.0 V
2
100
Tch - Channel Temperature - °C
6
1.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.3
1
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
TA = -25° C
125° C
1
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 16 A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Sep,13,2013
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SP8005
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 2.0
ID = 16 A
8
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
6
4
2
0
0
-50
50
100
Ciss
Coss
Crss
1000
100
10
0.1
150
Tch - Channel Temperature - °C
1
10
100
VDS - Drain to Source Voltage - V
td(off)
tf
100
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS
tr
td(on)
10
VDD = 16.0 V
VGS = 4.5 V
RG = 6 Ω
1
0.1
4
2
1
ID = 32 A
0
1
10
ID - Drain Current - A
VDD = 4 V
10 V
16 V
3
0
6
12
18
24
30
QG - Gate Charge -nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
1000
100
10
1
0.1
VGS = 0 V
0.01
0
0.3
0.6
0.9
1.2
1.5
1.8
VF(S-D) - Source to Drain Voltage - V
Sep,13,2013
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SP8005
Ver 2.0
PACKAGE OUTLINE DIMENSIONS
TSON 3.3 x 3.3
A
E2
C
H
D2
M
D
D1
D3
L1
L
PIN 1
b
e
0
E1
E
SYMBOLS
A
b
C
D
D1
D2
D3
E
E1
E2
e
H
L
L1
M
MILLIMETERS
MIN.
NOM.
0.75
0.70
0.25
0.30
0.10
0.15
3.25
3.35
3.00
3.10
1.88
1.78
0.13
3.20
3.30
3.00
3.15
2.39
2.49
0.65 BSC
0.39
0.30
0.30
0.40
0.13
10o
0
MAX.
0.80
0.35
0.25
3.45
3.20
1.98
3.40
3.20
2.59
0.50
0.50
0.15
12o
Sep,13,2013
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SP8005
Ver 2.0
TSON 3.3 x 3.3 Tape and Reel Data
TSON 3.3 x 3.3 Tape
P2
P1
D1
B
E1
E2
E
A
A
T
B
D
P
H1
H
K
SECTION A-A
SECTION B-B
FEEDING DIRECTION
unit:р
PACKAGE
S mini 8
D
D1
E
E1
E2
H
H1
K
P
P1
P2
T
ӿ1.50
(MIN)
ӿ1.50
+0.10
- 0.00
12.0
+0.30
- 0.10
1.75
²0.10
5.50
²0.05
3.70
²0.10
3.70
²0.10
1.10
²0.10
8.0
²0.10
4.0
²0.10
2.0
²0.05
0.3
²0.05
TSON 3.3 x 3.3 Reel
W1
B
N
A
C
D
W2
UNIT:р
TAPE SIZE
12 р
REEL SIZE
13 "
A
B
C
330 ²!1.0
+ 0.5
1.5 - 0.2
+ 0.5
ӿ13.0 - 0.2
D
N
W1
W2
20.2(ref.)
+ 0.0
178 - 2.0
+ 2.0
12.4
- 0.0
18.4(ref.)
Sep,13,2013
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SP8005
Ver 2.0
TOP MARKING DEFINITION
TSON 3.3 x 3.3
8005
Product No.
XXXXXX
Pin 1
SMC internal Code No.
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Sep,13,2013
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