SC8220

SC8220
Gre
r
Pro
S a mHop Microelectronics C orp.
Ver 1.1
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V SSS
IS
R SS(ON) (m Ω) Max
Rugged and reliable.
28.0 @ VGS=4.5V
Wafer level CSP.
30.0 @ VGS=4.0V
24V
5.8A
ESD Protected.
35.0 @ VGS=3.1V
42.0 @ VGS=2.5V
BOTTOM VIEW
0.65
1.73 㫧 0.02
TOP VIEW
1.73 㫧 0.02
G2
0.65
G1
1-pin index mark S1
4 - φ 0.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C )
Symbol
Limit
Parameter
VSSS
Source-Source Voltage
24
±12
VGSS
Gate-Source Voltage
IS
Source Current-Continuous
PT
TJ, TSTG
-Pulsed
Total Power Dissipation
S1
Mark area
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
0.305 㫧 0.012
0.102 㫧 0.007
ISP
S2
a
b
a
Operating Junction and Storage
Temperature Range
Unit : mm
Units
FET1
FET2
V
Gate 1
Gate 2
5.8
V
A
58
A
1.6
W
Gate
Protect
Diode
Source 1
Source 2
Body Diode
-55 to 150
Details are subject to change without notice.
°C
Nov,02,2011
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SC8220
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Source-Source Breakdown Voltage
BVSSS
Zero Gate Voltage Source Current
ISSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RSS(ON)
Source-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
Conditions
Min
VGS=0V , IS=10mA
24
VSS=24V , VGS=0V
VGS= ±12V , VSS=0V
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
1
V
uA
±10
uA
0.5
0.65
14.0
20.0
VGS=4.0V , IS=2.9A
14.4
21.0
30.0
m ohm
VGS=3.1V , IS=2.9A
VGS=2.5V , IS=2.9A
VSS=5V , IS=2.9A
15.0
18.0
24.0
28.0
12
35.0
42.0
m ohm
m ohm
S
VSS=10V,VGS=0V
f=1.0MHz
Output Capacitance
Rise Time
Units
1.5
V
28.0 m ohm
c
COSS
tr
Max
VSS=VGS , IS=1mA
VGS=4.5V , IS=2.9A
Input Capacitance
tD(OFF)
Typ
399
ns
189
ns
71
ns
150
ns
730
ns
3100
ns
2280
ns
12.7
nC
c
VDD=20V
IS=2.9A
VGS=4.0V
RGEN=6 ohm
VDD=20V,IS=5.8A,
VG1S1=4.0V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VFSS
VGS=0V,IS=1.5A
0.77
1.2
V
Note
a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.6mm.
_ 10us, Duty Cycle <
_ 1%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Nov,02,2011
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SC8220
Ver 1.1
V SSS / I SSS
IGSS (+) / (--)
S2
S2
G2
G2
G1
G1
S1
S1
| y fs |
V GS (off)
S2
S2
G2
G2
10V 1mA
G1
G1
S1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Nov,02,2011
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SC8220
Ver 1.1
R SS (on)
V F(S-S)
S2
S2
4.5V
G2
G2
G1
G1
S1
S1
Qg
td(on), t r, t d(off), t f
V DD =10V
S2
V IN
S2
IS =3A
R L =3.33 W
V OUT
G2
G2
PW=10 μs
D.C. 1%
G1
G1
S1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Nov,02,2011
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SC8220
Ver 1.1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
Mounted on FR-4 board of
1 inch2 , 2oz
2
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
R
10
)
(ON
Lim
100us
1ms
1
10ms
100ms
0.1
0.01
0.1
VGS=4.5V
Single Pulse
TA=25 C
DC
1
10
VSS - Source to Source Voltage - V
rth - tw
1000
Transient thermal impedance
rth (°C/W)
IS - Source Current - A
it
DS
Mounted on FR-4 board
100
10
Single Pulse
1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (S)
Nov,02,2011
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SC8220
Ver 1.1
FORWARD TRANSFER CHARACTERISTICS
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
100
24
VGS = 4.5 V
IS - Source Current - A
IS - Source Current - A
30
4.0 V
18
3.1 V
12
2.5 V
10
125°C
1
75°C
25°C
0.1
6
TA = -25°C
0.01
0
0
0.2
0.4
0.6
0.8
0.3
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
0.8
IS = 1.0mA
0.7
0.6
0.5
0.4
50
100
150
RSS(on) - Source to Source On-state Resistance - mΩ
RSS(on) - Source to Source On-state Resistance - mΩ
VGS = 2.5 V
30
3.1 V
20
4.5 V
10
0
0.1
1
10
1.8
10
TA = -25°C
25°C
1
75°C
125°C
0.1
0.01
0.1
0.01
1
10
100
IS - Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
50
4.0 V
1.5
100
Tch - Channel Temperature - °C
40
1.2
FORWARD TRANSFER ADMITTANCE vs.
SOURCE CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
0.9
VGS - Gate to Source Voltage - V
VSS - Source to Source Voltage - V
0.3
-50
0.6
100
IS - Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
IS = 2.9 A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
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SC8220
CAPACITANCE vs. SOURCE TO SOURCE VOLTAGE
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
VGS = 2.5 V
3.1 V
40
1000
Ciss, Coss, Crss - Capacitance - pF
RSS(on) - Source to Source On-state Resistance - mΩ
Ver 1.1
IS = 2.9 A
4.0 V
30
4.5 V
20
10
0
0
-50
50
100
Ciss
Coss
100
Crss
10
0.1
150
1
10
100
VSS - Source to Source Voltage - V
Tch - Channel Temperature - °C
DYNAMIC INPUT CHARACTERISTICS
SWITCHING CHARACTERISTICS
td(off)
tf
1000
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
4
tr
td(on)
100
10
0.1
VDD = 10.0 V
VGS = 4.0 V
RG = 6 Ω
VDD = 5 V
3
12 V
20 V
2
1
IS = 5.8 A
0
1
10
0
3
6
9
12
15
QG - Gate Charge -nC
IS - Source Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
VF(S-S) - Source to Source Voltage - V
Nov,02,2011
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